IXTN200N10T Search Results

IXTN200N10T Price and Stock

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Littelfuse Inc IXTN200N10T MOSFET N-CH 100V 200A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN200N10T	Tube	270		1	1 $24.75 10 $24.75 100 $24.75 1000 $24.75 10000 $24.75	Buy Now
Newark	IXTN200N10T	Bulk			300	1 - 10 - 100 - 1000 $25.95 10000 $25.95	Buy Now
IXYS Corporation IXTN200N10T MOSFET Modules 100V 200A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTN200N10T		213			1 $24.75 10 $24.75 100 $24.75 1000 $24.75 10000 $24.75	Buy Now
Future Electronics	IXTN200N10T	Tube			10	1 - 10 $29.01 100 $29.01 1000 $29.01 10000 $29.01	Buy Now
TTI	IXTN200N10T	Tube			300	1 - 10 - 100 - 1000 $24.75 10000 $24.75	Buy Now
TME	IXTN200N10T				1	1 $38.13 10 $30.23 100 $30.23 1000 $30.23 10000 $30.23	Get Quote
New Advantage Corporation	IXTN200N10T		26		1	1 - 10 $61.01 100 $56.95 1000 $56.95 10000 $56.95	Buy Now
IXYS Integrated Circuits Division IXTN200N10T MOSFET MOD.200A 100V N-CH SOT227B TRENCH CHASSIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTN200N10T		33			1 $45.75898 10 $42.7654 100 $42.7654 1000 $42.7654 10000 $42.7654	Buy Now

IXTN200N10T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTN200N10T		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 200A SOT-227		Original	PDF

IXTN200N10T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXtN200N10 Abstract: IXTN200N10T 200N10T Text: Preliminary Technical Information IXTN200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTN200N10T OT-227 E153432 200N10T 9-30-08-D IXtN200N10 IXTN200N10T
Untitled Abstract: No abstract text available Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTN200N10T RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTN200N10T OT-227 E153432 200N10T 9-30-08-D
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	PDF	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2