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IXSN80N60A Price and Stock

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IXYS Corporation IXSN80N60AU1 IGBT MOD 600V 160A 500W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSN80N60AU1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXSN80N60AU1		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXSN80N60A IGBT MOD.SINGLE 80A 600V H.CURRENT SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
New Advantage Corporation	IXSN80N60A		277		1	1 - 10 - 100 $54.71 1000 $51.06 10000 $51.06	Buy Now

IXSN80N60A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSN80N60A		IXYS	High Current IGBT		Original	PDF
IXSN80N60AU1		IXYS	TRANS IGBT MODULE N-CH 600V 160A 4SOT-227B		Original	PDF

IXSN80N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: High Current IGBT IXSN80N60A VCES = IC25 = VCE sat = 600 V 160 A 3V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V	Original	IXSN80N60A OT-227	PDF
S8500 Abstract: ixsn80N60A high current igbt ic902 Text: High Current IGBT IXSN80N60A VCES = IC25 = VCE sat = 600 V 160 A 3V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V	Original	IXSN80N60A OT-227 S8500 ixsn80N60A high current igbt ic902	PDF
Untitled Abstract: No abstract text available Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient	Original	80N60AU1 OT-227 E153432	PDF
80n60 Abstract: IXSN80N60AU1 Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30	Original	80N60AU1 OT-227 E153432 80n60 IXSN80N60AU1	PDF
T0263 Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247TI(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES	OCR Scan	T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B	PDF
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel	PDF
case style Abstract: IXSH35N100A Text: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES	OCR Scan	O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A	PDF