IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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T0263
Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES
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T0-220
PLUS247TM
O-268
IS0PLUS247T
OT-227B
T0263
O-247
IXSA16N60
IXSP16N60
IXSH24N60
T0-263
IXSH25N120A
IXSH30N60C
IXSH15N120B
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ixsh40n60a
Abstract: No abstract text available
Text: OIXYS Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Typ« V v«» «»c c - typ . Chip dlmecn io n * S ource $ b o n tfw fi* V V A PF 600 2.5 2.3 2 2,3 22 10 16 20 20 20 750 920 1800 2760 4500 300 310 500 400 400 1X32
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IXSD10N60
IXSD16N60
IXSD24N60
IXSD30N60
IXSD40N60
IXSD25N100
IXSD45N100
1XSD45N120
IXSD10N60A
IXSD24N60A
ixsh40n60a
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case style
Abstract: IXSH35N100A
Text: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES
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O-268AA
O-264
OT-227B
PLUS247TM
ISOPLUS247TM
IXSH24N60
IXSH45N100
IXSH45N120*
IXSH45N120B
IXST45N120B
case style
IXSH35N100A
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ASN100
Abstract: IXSH45N100 bv 1500 sts
Text: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20
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45N100
O-247
O-204
ASN100
IXSH45N100
bv 1500 sts
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Untitled
Abstract: No abstract text available
Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type V CB V CEtut Chip type 'c “h & CUlF Bize ch n w is Ions Source i bond wire Tjb = 150"C s o _i T2 OJ 0) a to JC CT ir mils 1 Dim. . out line No. V V A pF 600
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IXSD16N60-3T
IXSD24N60-4X
IXSD30N60-5X
173x142
222x185
259x259
227x195
IXSH25N100A
IXSH35N100A
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