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    IXKC 20N60C Search Results

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    IXKC 20N60C Price and Stock

    Littelfuse Inc IXKC20N60C

    MOSFET N-CH 600V 15A ISOPLUS220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKC20N60C Tube 50
    • 1 -
    • 10 -
    • 100 $7.2634
    • 1000 $7.2634
    • 10000 $7.2634
    		Buy Now

    IXYS Corporation IXKC20N60C

    MOSFETs 14 Amps 600V 0.19 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXKC20N60C 33
    • 1 $11.79
    • 10 $10.39
    • 100 $9.22
    • 1000 $9.22
    • 10000 $9.22
    		Buy Now
    TTI IXKC20N60C Box 50
    • 1 -
    • 10 -
    • 100 $7.26
    • 1000 $7.26
    • 10000 $7.26
    		Buy Now

    IXKC 20N60C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXKC20N60C IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 15A ISOPLUS220 Original PDF
    IXKC20N60C IXYS CoolMOS Power MOSFET in ISOPLUS220 Package Electrically Isolated Back Surface Original PDF
    IXKC20N60C IXYS 600V coolMOS power MOSFET Original PDF

    IXKC 20N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20n60c

    Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
    Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:


    Original     		PDF 20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c

    20n60c

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c

    20N60C

    Abstract: UPS 380v
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM 728B1 065B1 123B1 20N60C UPS 380v

    UPS 380v

    Abstract: 20n60c power switching
    Text: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM


    Original     		PDF 20N60C ISOPLUS220TM 220LVTM E153432 728B1 065B1 123B1 UPS 380v 20n60c power switching

    20n60c

    Abstract: UPS 380v IXKC 20n60c
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface VDSS = 600 V ID25 = 14 A Ω RDS on = 190 mΩ N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 20N60C 220TM ISOPLUS220 20n60c UPS 380v IXKC 20n60c

    20n60c

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 20N60C ISOPLUS220TM E72873 20n60c

    20N60C

    Abstract: IXKC 20n60c
    Text: IXKC 20N60C COOLMOS * Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20N60C IXKC 20n60c

    20N60C

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20080523a 20N60C

    20n60c

    Abstract: IXKC 20n60c E72873 A8711
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20080523a 20n60c IXKC 20n60c E72873 A8711

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D