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IXGR60N60C2 Price and Stock

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IXYS Corporation IXGR60N60C2 IGBT PT 600V 75A ISOPLUS247
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IXYS Corporation IXGR60N60C2D1 IGBT PT 600V 75A ISOPLUS247
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DigiKey	IXGR60N60C2D1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXGR60N60C2 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGR60N60C2		IXYS	IGBT Discretes		Original	PDF
IXGR60N60C2		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 250W ISOPLUS247		Original	PDF
IXGR60N60C2D1		IXYS	HiPerFAST IGBT		Original	PDF
IXGR60N60C2D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 250W ISOPLUS247		Original	PDF

IXGR60N60C2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
G60N60 Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2 Contextual Info: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	IXGR60N60C2C1 IC110 IF110 60N60C2C1 2-17-08-A G60N60 G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2	PDF
G60N60 Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2 Contextual Info: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A G60N60 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2	PDF
Contextual Info: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A	PDF
IXGR60N60C2 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2	PDF
60N60C2 Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 Symbol Test Conditions V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A	PDF