IXGR60N60C2C1 Search Results

IXGR60N60C2C1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
G60N60 Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2 Contextual Info: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	IXGR60N60C2C1 IC110 IF110 60N60C2C1 2-17-08-A G60N60 G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2	PDF
G60N60 Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2 Contextual Info: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A G60N60 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2	PDF
Contextual Info: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A	PDF

Catalog Datasheet

Type

Document Tags

PDF

G60N60

Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2
Contextual Info: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

Original

IXGR60N60C2C1 IC110 IF110 60N60C2C1 2-17-08-A G60N60 G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2

PDF

G60N60

Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2
Contextual Info: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Original

IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A G60N60 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2

PDF

Contextual Info: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Original

IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A

PDF