Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    60N60C2D1 Search Results

    SF Impression Pixel

    60N60C2D1 Price and Stock

    IXYS Corporation IXGK60N60C2D1

    IGBT 600V 75A 480W TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGK60N60C2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    New Advantage Corporation IXGK60N60C2D1 498 1
    • 1 -
    • 10 -
    • 100 $16.42
    • 1000 $15.32
    • 10000 $15.32
    		Buy Now

    IXYS Corporation IXGN60N60C2D1

    IGBT MOD 600V 75A 480W SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGN60N60C2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGR60N60C2D1

    IGBT 600V 75A 250W ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGR60N60C2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGX60N60C2D1

    IGBT 600V 75A 480W PLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGX60N60C2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Integrated Circuits Division IXGK60N60C2D1

    IGBT DIS.DIODE SINGLE 60A 600V H.FAST TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGK60N60C2D1 598
    • 1 $12.35219
    • 10 $12.35219
    • 100 $11.5441
    • 1000 $11.5441
    • 10000 $11.5441
    		Buy Now

    60N60C2D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    siemens igbt 75a

    Abstract: PLUS247
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 60N60C2D1 IC110 2x61-06A siemens igbt 75a PLUS247

    IXGR60N60C2

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2

    60-06A

    Abstract: 60N60C2D1 60N60C2D IF110 PLUS247
    Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 IF110 O-264 0-06A 60-06A 60N60C2D IF110 PLUS247

    60N60C2

    Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1

    60N60C2D1

    Abstract: No abstract text available
    Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 O-264 IF110 PLUS247 0-06A

    60N60C2

    Abstract: 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface IXGR_C2 VCES IC25 VCE(sat) tfi(typ) IXGR_C2D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 728B1 123B1 728B1 065B1 60N60C2 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 Symbol Test Conditions V CES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A

    IGBT 60N60C2D1

    Abstract: siemens igbt 75a PLUS247 60N60C2D1
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 60N60C2D1 IC110 2x61-06A IGBT 60N60C2D1 siemens igbt 75a PLUS247

    60N60C2D1

    Abstract: IGBT 60N60C2D1 MD 202 60N60 siemens igbt 75a TO-264-aa 60-06A IF110 PLUS247 HIPERFAST IGBT WITH DIODE
    Text: HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 IF110 O-264 0-06A IGBT 60N60C2D1 MD 202 60N60 siemens igbt 75a TO-264-aa 60-06A IF110 PLUS247 HIPERFAST IGBT WITH DIODE

    IXGN60N60C2

    Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A


    Original     		PDF 60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D

    60N60C2D1

    Abstract: 60N60C2 DI IGBT 60N60C2D1 C9VI
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A


    Original     		PDF 60N60C2 IXGN60N60C2D1 IC110 OT-227B, 2x61-06A 60N60C2D1 60N60C2 DI IGBT 60N60C2D1 C9VI

    60N60C2

    Abstract: 60N60C2D1
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A


    Original     		PDF 60N60C2 IXGN60N60C2D1 IC110 OT-227B, 2x61-06A 60N60C2D1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2