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Littelfuse Inc IXFK150N30X3 MOSFET N-CH 300V 150A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK150N30X3	Tube	595		1	1 $19.38 10 $19.38 100 $19.38 1000 $19.38 10000 $19.38	Buy Now
Newark	IXFK150N30X3	Bulk	225		1	1 $15.58 10 $14.47 100 $12.4 1000 $12.4 10000 $12.4	Buy Now
RS	IXFK150N30X3	Bulk		8 Weeks	25	1 - 10 - 100 $19.57 1000 $19.57 10000 $19.57	Get Quote
Littelfuse Inc IXFK80N65X2 MOSFET N-CH 650V 80A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK80N65X2	Tube	491		1	1 $17.07 10 $17.07 100 $14.2564 1000 $14.2564 10000 $14.2564	Buy Now
RS	IXFK80N65X2	Bulk		8 Weeks	25	1 - 10 - 100 $22.05 1000 $22.05 10000 $22.05	Get Quote
Littelfuse Inc IXFK80N50P MOSFET N-CH 500V 80A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK80N50P	Tube	450		1	1 $20.66 10 $20.66 100 $20.66 1000 $20.66 10000 $20.66	Buy Now
RS	IXFK80N50P	Bulk		8 Weeks	25	1 - 10 - 100 $21.19 1000 $21.19 10000 $21.19	Get Quote
Littelfuse Inc IXFK32N80Q3 MOSFET N-CH 800V 32A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK32N80Q3	Tube	442		1	1 $25.63 10 $25.63 100 $17.8668 1000 $17.8668 10000 $17.8668	Buy Now
Newark	IXFK32N80Q3	Bulk			300	1 - 10 - 100 - 1000 $18.73 10000 $18.73	Buy Now
RS	IXFK32N80Q3	Bulk		8 Weeks	25	1 - 10 - 100 $27.63 1000 $27.63 10000 $27.63	Get Quote
Littelfuse Inc IXFK180N25T MOSFET N-CH 250V 180A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK180N25T	Tube	372		1	1 $17.85 10 $17.85 100 $17.85 1000 $17.85 10000 $17.85	Buy Now
Verical	IXFK180N25T		25		1	1 $16.458 10 $16.458 100 $11.148 1000 $11.148 10000 $11.148	Buy Now
	IXFK180N25T		7		1	1 $13.789 10 $13.789 100 $11.159 1000 $11.159 10000 $11.159	Buy Now
Arrow Electronics	IXFK180N25T		25		1	1 $16.458 10 $16.458 100 $11.148 1000 $11.148 10000 $11.148	Buy Now
	IXFK180N25T		7	27 Weeks	1	1 $13.789 10 $13.789 100 $11.159 1000 $11.159 10000 $11.159	Buy Now
Newark	IXFK180N25T	Bulk	300		1	1 $17.49 10 $13.65 100 $11.2 1000 $11.2 10000 $11.2	Buy Now
RS	IXFK180N25T	Bulk		8 Weeks	25	1 - 10 - 100 $17.67 1000 $17.67 10000 $17.67	Get Quote

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IXFK Datasheets (162)

Part	Manufacturer	Description	Datasheet Type	PDF
IXFK100N10	IXYS	100V HiPerFET power MOSFET	Original	PDF
IXFK100N25	IXYS	250V HiPerFET power MOSFET	Original	PDF
IXFK100N65X2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 100A TO-264	Original	PDF
IXFK102N30P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF
IXFK102N30P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 102A TO-264	Original	PDF
IXFK105N07	IXYS	70V HiPerFET power MOSFET	Original	PDF
IXFK110N06	IXYS	60V HiPerFET power MOSFET	Original	PDF
IXFK110N07	IXYS	70V HiPerFET power MOSFET	Original	PDF
IXFK120N20	IXYS	200V HiPerFET power MOSFET	Original	PDF
IXFK120N20	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 120A TO-264AA	Original	PDF
IXFK120N20P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF
IXFK120N25	IXYS	250V HiPerFET power MOSFET	Original	PDF
IXFK120N25P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF
IXFK120N30P3	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 120A TO-264	Original	PDF

IXFK120N30T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 120A 300V TO-264	Original	PDF
IXFK120N65X2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 120A TO-264	Original	PDF
IXFK140N20P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF
IXFK140N25T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 140A TO264	Original	PDF
IXFK140N30P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 140A TO-264	Original	PDF
IXFK150N10	IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF

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IXFK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
34N80 Abstract: IXFN34N80 ixfx34n80 Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	34N80 247TM 34N80 IXFN34N80 ixfx34n80
73N30 Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30 Text: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK	Original	PDF	O-264 73N30 "SOT-227 B" dimensions SOT-227 Package ixfk73n30
62n25 Abstract: 62n25 mosfet 62n2 247TM Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient	Original	PDF	62N25 247TM O-264 728B1 62n25 62n25 mosfet 62n2 247TM
IRM-38 Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20 Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings	Original	PDF	O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20
120N25 Abstract: ID104 Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	120N25 ID104 247TM 728B1 120N25 ID104
100N25 Abstract: ID104 Text: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM	Original	PDF	100N25 ID104 247TM capa26 100N25 ID104
52N30 Abstract: IXFH 52N30q 52N30Q TO264 footprint Text: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions	Original	PDF	52N30Q 52N30 IXFH 52N30q 52N30Q TO264 footprint
32N50Q Abstract: 125OC Text: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A	Original	PDF	32N50Q 247TM 125OC 728B1 123B1 728B1 065B1 32N50Q 125OC
36N60 Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623 Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)	Original	PDF	32N60 36N60 36N60 32N60 250ns O-264 IXFN SOT227 fast diode SOT-227 D-68623
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class = 150 V = 80 A = 22.5 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS	Original	PDF	80N15Q
Untitled Abstract: No abstract text available Text: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)	Original	PDF	21N100F 247TM 728B1
E 150N10 Abstract: 150N10 100N10 IXFK100N10 IXFN150N10 Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C	Original	PDF	IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10
IXFK240N15T2 Abstract: IXFX240N15T2 PLUS247 Text: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions	Original	PDF	IXFK240N15T2 IXFX240N15T2 140ns O-264 240N15T2 IXFK240N15T2 IXFX240N15T2 PLUS247
80N50P Abstract: IXFK 80N50P PLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	PDF	80N50P O-264 80N50P IXFK 80N50P PLUS247

Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol	Original	PDF	36N60P
88N30P Abstract: A220D 88N30 Text: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300	Original	PDF	88N30P O-247 88N30P A220D 88N30
200N10P Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
360N10T Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247 Text: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions	Original	PDF	IXFK360N10T IXFX360N10T 130ns O-264 360N10T PLUS-247 IXFK360N10T IXFX360N10T PLUS247
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient	Original	PDF	90N30 90N30 ID104 247TM O-264
Siemens DIODE E 1240 Abstract: IXFK80N60P3 IXFX80N60P3 Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V	Original	PDF	IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000	Original	PDF	24N100 24N100 247TM O-264
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	120N20 120N20 ID104 247TM O-264 125OC 728B1
TO-264-aa Abstract: No abstract text available Text: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30	OCR Scan	PDF	IXFK90N20Q IXFK90N20QS O-264 O-264AA TO-264-aa
RM338 Abstract: qfl 289 106N20 IXFK90N20 Text: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2	OCR Scan	PDF	IXFK90N20 IXFN106N20 90N20 106N20 200ns 20mi2 200ns d68623 106N20 RM338 qfl 289

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Littelfuse Inc IXFK150N30X3

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Littelfuse Inc IXFK32N80Q3

Littelfuse Inc IXFK180N25T

IXFK Datasheets (162)

IXFK Datasheets Context Search

34N80

73N30

62n25

IRM-38

120N25

100N25

52N30

32N50Q

36N60

Untitled

Untitled

E 150N10

IXFK240N15T2

80N50P

Untitled

88N30P

200N10P

360N10T

Untitled

Siemens DIODE E 1240

Untitled

Untitled

TO-264-aa

RM338