100N25
Abstract: ID104
Text: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM
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100N25
ID104
247TM
capa26
100N25
ID104
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100N25P
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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100N25P
O-247
100N25P
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 VDSS ID25 = 250 V = 100 A = 27 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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100N25
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100N25
Abstract: No abstract text available
Text: Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient
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100N25
100N25
ID104
247TM
O-264
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100N25P
Abstract: 100N25 IXTK100N25P 50A8
Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
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100N25P
100N25P
100N25
IXTK100N25P
50A8
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXTQ 100N25P IXTK 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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100N25P
100N25P
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100N25P
Abstract: No abstract text available
Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
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100N25P
100N25P
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100N25
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 RDS on Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25
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100N25
OT-227
100N25
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IXFN100N25
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXFN 100N25 HiPerFET Power MOSFETs V,DSS 250 ^D25 100 A 27 mQ R,DS on Single MOSFET Die A N -C h a n n e l E n h a n c e m e n t M o d e { I*-] A v a la n c h e R a te d , H ig h d v /d t, L o w t rr V trr < 250 ns
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IXFN100N25
OT-227
E153432
IXFN100N25
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Untitled
Abstract: No abstract text available
Text: IXTQ 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ For Plasma Display Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30
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100N25P
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100N25
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFET Power MOSFETs V DSS = 250 V* ID25 = 100 A DS on Single MOSFET Die Maximum Ratings PLUS 247™ (IXFX) TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 250 250
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100N25
100N25
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100N25P
Abstract: No abstract text available
Text: IXFH 100N25P PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ ≤ 200 ns trr For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V
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100N25P
O-247
100N25P
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98840
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 100N25 VDSS ID25 = 250 V = 87 A Ω = 27 mΩ RDS on (Electrically Isolated Backside) trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions
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ISOPLUS247TM
100N25
98840
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 RDS on Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25
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100N25
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98840
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 100N25 trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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ISOPLUS247TM
100N25
98840
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100N25
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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100N25P
O-247
100N25
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100N25
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A = 27 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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100N25
100N25
ID104
247TM
O-264
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Bosch ecu connectors
Abstract: bosch PA66 gf bosch PA66 GF 15 Bosch ecu connector Bosch 80 pin ecu connectors ecu connectors bosch connector bosch bosch ecu ecu bosch bosch ecu datasheet
Text: Product Specification 108-61015 Rev. A ECU 88P CONNECTOR – BOSCH TYPE 1. Scope: 1.1 Contents; This specification covers the requirements for product performance, test methods and quality assurance provisions of ECU 88P connector BOSCH type 1.2 Applicable document;
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ECR-09-013748,
Bosch ecu connectors
bosch PA66 gf
bosch PA66 GF 15
Bosch ecu connector
Bosch 80 pin ecu connectors
ecu connectors bosch
connector bosch
bosch ecu
ecu bosch
bosch ecu datasheet
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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flyback transformer eldor
Abstract: furukawa TEX-E TRANSISTORS BJT bc548 samwha capacitor part numbers AN1523 E20/10/6 transformer 4 pin size B82731-R2501-A30 PCB- 94v-0 samwha date code optocoupler MTBF calculation
Text: AN1523 APPLICATION NOTE 11W FLYBACK CONVERTER FOR AUXILIARY POWER SUPPLY APPLICATION USING THE L6590 by Claudio Spini This document describes an 11W Switch Mode Power Supply reference design, dedicated to Consumer Applications, e.g. TV chassis auxiliary power supply, low cost Set-top box or digital equipment. The
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AN1523
L6590
265Vrms)
L6590,
flyback transformer eldor
furukawa TEX-E
TRANSISTORS BJT bc548
samwha capacitor part numbers
AN1523
E20/10/6 transformer 4 pin size
B82731-R2501-A30
PCB- 94v-0
samwha date code
optocoupler MTBF calculation
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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AN1523
Abstract: flyback transformer eldor E17385 furukawa TEX-E optocoupler MTBF calculation Nexans samwha date code Loctite 480 TRANSISTORS BJT bc548 optocoupler IC PC817 pin details
Text: AN1523 APPLICATION NOTE 11W FLYBACK CONVERTER FOR AUXILIARY POWER SUPPLY APPLICATION USING THE L6590 by Claudio Spini This document describes an 11W Switch Mode Power Supply reference design, dedicated to Consumer Applications, e.g. TV chassis auxiliary power supply, low cost Set-top box or digital equipment. The
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AN1523
L6590
265Vrms)
L6590,
AN1523
flyback transformer eldor
E17385
furukawa TEX-E
optocoupler MTBF calculation
Nexans
samwha date code
Loctite 480
TRANSISTORS BJT bc548
optocoupler IC PC817 pin details
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