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    ID104 Price and Stock

    EPIGAP OSA Photonics OCI-490-20-ID1040-STAR

    SWIR EMITTER 1040NM SMD DOME ON
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    DigiKey OCI-490-20-ID1040-STAR Bag 10 1
    • 1 $46.08
    • 10 $37.928
    • 100 $46.08
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    EPIGAP OSA Photonics OCI-490-20-ID1040-XE-T

    SWIR EMITTER 1040NM SMD DOME LEN
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    DigiKey OCI-490-20-ID1040-XE-T Cut Tape 2 1
    • 1 $26.72
    • 10 $20.933
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    OCI-490-20-ID1040-XE-T Digi-Reel 2 1
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    OCI-490-20-ID1040-XE-T Reel 100
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    Microchip Technology Inc ID104

    SCR
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    DigiKey ID104 Bulk 100
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    EPIGAP OSA Photonics OCI-480-ID1040-X-T

    SWIR EMITTER 1040NM SMD GLOB TOP
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    DigiKey OCI-480-ID1040-X-T Digi-Reel 1
    • 1 $28.8
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    OCI-480-ID1040-X-T Cut Tape 1
    • 1 $28.8
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    OCI-480-ID1040-X-T Reel 100
    • 1 -
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    • 100 $19.9884
    • 1000 $18.58996
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    KEMET Corporation UPID1040L3R300

    V |Kemet UPID1040L3R300
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    Newark UPID1040L3R300 Bulk 1,860 1,000
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    Find more ID104 price and stock on Findchips.com

    ID104 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ID104 Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF
    ID104 Microsemi SCRs .5 Amp, Planar Scan PDF
    ID104 Microsemi SCR 0.5 A, Planar Scan PDF
    ID104 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    ID104 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    ID104 Unitrode International Semiconductor Data Book 1981 Scan PDF

    ID104 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    120N25

    Abstract: ID104
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N25 ID104 247TM 728B1 120N25 ID104 PDF

    100N25

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM


    Original     		100N25 ID104 247TM capa26 100N25 ID104 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS ID100-ID106 SILICON CONTROLLED RECTIFIER 0.5 AMP Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		ID100-ID106 MIL-PRF-19500, ID100 ID101 ID102 ID103 ID104 ID105 ID106 no5-7200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient


    Original     		90N30 90N30 ID104 247TM O-264 PDF

    1d105

    Abstract: unitrode Applications Note 1D100 100S ID100 ID103 ID104 ID105 ID106 unitrode op 02
    Text: ID100-ID106 SCRs .5 Amp, Planar FEA TU RES • Voltage R a tin g s: to 400V • M axim um Gate T rigg er C u rre n t: 200/iA • H e rm e tically S e aled TO-18 M etal Can • P lan ar P assiv ate d C o n stru ction D ESCR IPTIO N T h is Data S h e e t d e sc rib e s U n itro d e's lin e of h e rm e tic a lly se ale d in d u stria l S C R s


    OCR Scan     		ID100-ID106 200/iA ID100 ID103 ID104 ID105 ID106 1d105 unitrode Applications Note 1D100 100S ID106 unitrode op 02 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 120N20 ID104 247TM O-264 125OC 728B1 PDF

    120N20

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 120N20 ID104 247TM O-264 125OC 728B1 PDF

    TE 555-1

    Abstract: 419 on 80 GA201A 2n3031 2n2031
    Text: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A Ω = 33 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous


    Original     		90N30 ID104 247TM 125OC 728B1 PDF

    ID104

    Abstract: IXFX
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200


    Original     		120N20 ID104 247TM ID104 IXFX PDF

    Untitled

    Abstract: No abstract text available
    Text: SCRs ID100-ID106 .5 Amp, Planar FEA TU RES • Voltage R ating s: to 400V • Maximum Gate Trigger Curren t: 200,«A • H erm etically Sealed TO-18 Metal Can • Plan ar Passivated Construction DESCRIPTION This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs


    OCR Scan     		ID100-ID106 ID100 ID101 ID103 ID102 ID104 PDF

    120N20

    Abstract: motor IG 2200 19 125OC ID104
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 ID104 247TM 125OC 728B1 120N20 motor IG 2200 19 125OC ID104 PDF

    100N25

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient


    Original     		100N25 100N25 ID104 247TM O-264 PDF

    1485C-P1-C150

    Abstract: 1485T-P2T5-T5 DCA1-5C10 ISD 1720 1485TP2T5T5 JW50DN2 devicenet tap 1485C-P1A50 DCN1-3C Weidmuller plc
    Text: Version 1.1 Produced in April, 2002 Sharp Programmable Controller NEW Satellite JW50H/70H/100H Model name DeviceNet Master Module User's Manual JW-50DN Thank you for purchasing this DeviceNet master module, the JW-50DN for use with the JW50H/70H/ 100H programmable controller.


    Original     		JW50H/70H/100H JW-50DN JW-50DN JW50H/70H/ JW-50DN. JW50H/70H/100H 1485C-P1-C150 1485T-P2T5-T5 DCA1-5C10 ISD 1720 1485TP2T5T5 JW50DN2 devicenet tap 1485C-P1A50 DCN1-3C Weidmuller plc PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M20JLL 200V 104A 0.020Ω POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M20JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 ID104 247TM 125OC 728B1 PDF

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200


    Original     		120N20 120N20 ID104 247TM O-264 PDF

    120n20

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 ID104 247TM 728B1 123B1 728B1 065B1 120n20 ID104 PDF

    ID101 Unitrode

    Abstract: No abstract text available
    Text: SCRs ID100-ID106 .5 Amp, Planar F EA T U RE S • Voltage Ratings: to 400V • Maxim um Gate Trigger Current: 200/iA • Hermetically Sealed TO-18 Metal Can • Planar Passivated Construction D E S C R IP T IO N T h is Data Sheet describes Unitrode’s line of hermetically sealed industrial S C R s


    OCR Scan     		200/iA ID100-ID106 ID100 ID101 ID102 ID103 ID104 ID105 ID101 Unitrode PDF

    Q6012LH2

    Abstract: mw 137 600g shindengen cf 318 rca thyristor manual SCR TAG 665 600 triac mw 137 600G SCR Handbook, rca motorola triac mac635-8 triac tag 252 600 S106D1
    Text: PRODUCT CATALOG & DESIGN GUIDE Power Switching Semiconductor Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop


    Original     		EC114 EC2114v1E0807 Q6012LH2 mw 137 600g shindengen cf 318 rca thyristor manual SCR TAG 665 600 triac mw 137 600G SCR Handbook, rca motorola triac mac635-8 triac tag 252 600 S106D1 PDF

    APT20M20JLL

    Abstract: No abstract text available
    Text: APT20M20JLL 200V 104A 0.020Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M20JLL OT-227 APT20M20JLL PDF

    APT20M20JFLL

    Abstract: No abstract text available
    Text: APT20M20JFLL 200V 104A 0.020Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses


    Original     		APT20M20JFLL OT-227 APT20M20JFLL PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF