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    100N25 Search Results

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    100N25 Price and Stock

    ROHM Semiconductor RCJ100N25TL

    MOSFET N-CH 250V 10A LPT
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    DigiKey RCJ100N25TL Cut Tape 990 1
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    RCJ100N25TL Digi-Reel 990 1
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    RCJ100N25TL Cut Tape 848 1
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    RCJ100N25TL Digi-Reel 1
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    Mouser Electronics RCJ100N25TL 1,860
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    Chip1Stop RCJ100N25TL Cut Tape 43
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    Littelfuse Inc IXFH100N25P

    MOSFET N-CH 250V 100A TO247AD
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    DigiKey IXFH100N25P Tube 438 1
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    Newark IXFH100N25P Bulk 300
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    RS IXFH100N25P Bulk 8 Weeks 30
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    ROHM Semiconductor RCX100N25

    MOSFET N-CH 250V 10A TO220FM
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    DigiKey RCX100N25 Bulk 387 1
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    Mouser Electronics RCX100N25 387
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    Chip1Stop RCX100N25 Bulk 22
    • 1 $0.612
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    Littelfuse Inc IXTQ100N25P

    MOSFET N-CH 250V 100A TO3P
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    DigiKey IXTQ100N25P Tube 219 1
    • 1 $8.26
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    IXYS Corporation IXFK100N25

    MOSFET N-CH 250V 100A TO264AA
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    DigiKey IXFK100N25 Tube 25
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    100N25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100N25

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM


    Original     		PDF 100N25 ID104 247TM capa26 100N25 ID104

    100N25P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 100N25P O-247 100N25P

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 VDSS ID25 = 250 V = 100 A = 27 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 100N25

    100N25

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient


    Original     		PDF 100N25 100N25 ID104 247TM O-264

    100N25P

    Abstract: 100N25 IXTK100N25P 50A8
    Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 100N25P 100N25P 100N25 IXTK100N25P 50A8

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 100N25P IXTK 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 100N25P 100N25P

    100N25P

    Abstract: No abstract text available
    Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 100N25P 100N25P

    100N25

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 RDS on Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25


    Original     		PDF 100N25 OT-227 100N25

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ For Plasma Display Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30


    Original     		PDF 100N25P

    100N25P

    Abstract: No abstract text available
    Text: IXFH 100N25P PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ ≤ 200 ns trr For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V


    Original     		PDF 100N25P O-247 100N25P

    98840

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 100N25 VDSS ID25 = 250 V = 87 A Ω = 27 mΩ RDS on (Electrically Isolated Backside) trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 100N25 98840

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 RDS on Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25


    Original     		PDF 100N25

    Untitled

    Abstract: No abstract text available
    Text: IXFX 100N25 IXFK 100N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM


    Original     		PDF 100N25 ID104 247TM

    98840

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 100N25 trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF ISOPLUS247TM 100N25 98840

    100N25

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A = 27 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 100N25 100N25 ID104 247TM O-264

    Bosch ecu connectors

    Abstract: bosch PA66 gf bosch PA66 GF 15 Bosch ecu connector Bosch 80 pin ecu connectors ecu connectors bosch connector bosch bosch ecu ecu bosch bosch ecu datasheet
    Text: Product Specification 108-61015 Rev. A ECU 88P CONNECTOR – BOSCH TYPE 1. Scope: 1.1 Contents; This specification covers the requirements for product performance, test methods and quality assurance provisions of ECU 88P connector BOSCH type 1.2 Applicable document;


    Original     		PDF ECR-09-013748, Bosch ecu connectors bosch PA66 gf bosch PA66 GF 15 Bosch ecu connector Bosch 80 pin ecu connectors ecu connectors bosch connector bosch bosch ecu ecu bosch bosch ecu datasheet

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    flyback transformer eldor

    Abstract: furukawa TEX-E TRANSISTORS BJT bc548 samwha capacitor part numbers AN1523 E20/10/6 transformer 4 pin size B82731-R2501-A30 PCB- 94v-0 samwha date code optocoupler MTBF calculation
    Text: AN1523 APPLICATION NOTE 11W FLYBACK CONVERTER FOR AUXILIARY POWER SUPPLY APPLICATION USING THE L6590 by Claudio Spini This document describes an 11W Switch Mode Power Supply reference design, dedicated to Consumer Applications, e.g. TV chassis auxiliary power supply, low cost Set-top box or digital equipment. The


    Original     		PDF AN1523 L6590 265Vrms) L6590, flyback transformer eldor furukawa TEX-E TRANSISTORS BJT bc548 samwha capacitor part numbers AN1523 E20/10/6 transformer 4 pin size B82731-R2501-A30 PCB- 94v-0 samwha date code optocoupler MTBF calculation

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    AN1523

    Abstract: flyback transformer eldor E17385 furukawa TEX-E optocoupler MTBF calculation Nexans samwha date code Loctite 480 TRANSISTORS BJT bc548 optocoupler IC PC817 pin details
    Text: AN1523 APPLICATION NOTE 11W FLYBACK CONVERTER FOR AUXILIARY POWER SUPPLY APPLICATION USING THE L6590 by Claudio Spini This document describes an 11W Switch Mode Power Supply reference design, dedicated to Consumer Applications, e.g. TV chassis auxiliary power supply, low cost Set-top box or digital equipment. The


    Original     		PDF AN1523 L6590 265Vrms) L6590, AN1523 flyback transformer eldor E17385 furukawa TEX-E optocoupler MTBF calculation Nexans samwha date code Loctite 480 TRANSISTORS BJT bc548 optocoupler IC PC817 pin details

    IXFN100N25

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IXFN 100N25 HiPerFET Power MOSFETs V,DSS 250 ^D25 100 A 27 mQ R,DS on Single MOSFET Die A N -C h a n n e l E n h a n c e m e n t M o d e { I*-] A v a la n c h e R a te d , H ig h d v /d t, L o w t rr V trr < 250 ns


    OCR Scan     		PDF IXFN100N25 OT-227 E153432 IXFN100N25

    100N25

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFET Power MOSFETs V DSS = 250 V* ID25 = 100 A DS on Single MOSFET Die Maximum Ratings PLUS 247™ (IXFX) TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 250 250


    OCR Scan     		PDF 100N25 100N25

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q