ISOPLUS IXYS RECTIFIER MOUNTING Search Results

xenon hid ballast

Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

high frequency inverter for induction heating

Abstract: solar inverter circuit ixgh30n120 transistor Electronic ballast "INDUCTION LAMP" induction heating circuits SMPS INVERTER FULL BRIDGE FOR WELDING Converter for Induction Heating igbt 1200V 20A igbt for HIGH POWER induction heating resonant converter for welding
Contextual Info: IXYSPOWER Efficiency Through Technology N E W P R O D U C T B R I E F 1200V GenX3 IGBTs next generation 1200V igbts for power conversion applications march 2009 OVERVIEW IXYS expands its GenX3TM insulated gate bipolar transistor IGBT portfolio to 1200

IXAN0025

Abstract: diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 DC to 3Phase converter SIL-PAD 26N50 CS 112 thyristor IXFX180N10
Contextual Info: ISOPLUSTM - The Revolution in Discrete Isolation Technique Technical Application IXAN0025 Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which could also be the equipment chassis. The three main reasons for this are: a safety; b) the desire to reduce

IXBK55N300

Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking

solar inverter circuit

Abstract: 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A SOLAR INVERTER
Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F IXYS expands its 600V genx3TM IGBT family with silicon carbide anti-parallel diode july 2009 OVERVIEW The recent emergence and commercialization of Silicon Carbide SiC Technology in the power semiconductor industry has brought to light significant performance advances in

metal rectifier diode

Contextual Info: Three Phase Rectifier Bridge FUO 22-12N in ISOPLUS i4-PACTM VRRM = 1200 V ID AV M = 27 A IFSM = 100 A Preliminary Data 1 5 Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz

Contextual Info: FBO16-08N VRRM = 800 V Single Phase Rectifier Bridge ID AV M = 22 A IFSM = 100 A in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz

metal rectifier diode

Abstract: 4 pin bridge rectifier package FBO16-12N E 72873
Contextual Info: FBO16-12N VRRM = 1200 V Single Phase Rectifier Bridge ID AV M = 22 A IFSM = 100 A in ISOPLUS i4-PACTM Preliminary Data 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz

4 pin bridge rectifier package

Abstract: DIODE RECTIFIER BRIDGE 3 phase rectifier A three-phase bridge rectifier datasheet isoplus ixys mounting ixys rectifier 22-08N
Contextual Info: Advanced Technical Information FUO 22-08N VRRM = 800 V Three Phase Rectifier Bridge ID AV M = 27 A IFSM = 100 A in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C; rectangular; d = 1/3 (bridge)

"rectifier bridge"

Abstract: FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER 4 pin bridge rectifier package
Contextual Info: FBE 22-06N1 Fast Single Phase Rectifier Bridge VRRM = 600 V Id AV M = 20 A trr = 80 ns in ISOPLUS i4-PAC 1 4 5 1 5 Pin 3 = not connected 2 Features Rectifier Bridge Symbol Maximum Ratings Conditions VRRM 600 V IdAV Id(AV)M TC = 90°C, sine 180° (per diode)

4 pin bridge rectifier package

Contextual Info: Advanced Technical Information FBO16-08N VRRM = 800 V Single Phase Rectifier Bridge ID AV M = 22 A IFSM = 100 A in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C; rectangular; d = 1/2 (bridge)

Contextual Info: FBS 10-06SC Advanced Technical Information VRRM = 600 V IdAVM = 6.6 A Cjunction = 9 pF Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC  4 5  5 2 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 600 V IFAV ID AV M IFSM TC = 90°C; sine 80°

Contextual Info: Preliminary Technical Information High Voltage IGBT Phase-Leg FII24N170AH1 VCES = = IC25 VCE sat  tfi(typ) = 3 5 4 (Electrically Isolated Tab) 1700V 18A 6V 45ns 1 2 Symbol Test Conditions VCES TJ VGES ISOPLUS i4-PACTM Maximum Ratings = 25°C to 150°C

DIODE RECTIFIER BRIDGE SINGLE

Abstract: 1608N metal rectifier diode BRIDGE RECTIFIER DIODE RECTIFIER BRIDGE high power rectifier diode single FBO16-08N 3 phase rectifier diode datasheet line frequency diode single power diode package
Contextual Info: FBO16-08N VRRM = 800 V Single Phase Rectifier Bridge ID AV M = 22 A IFSM = 100 A in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz

Contextual Info: Advanced Technical Information FUO 22-08N VRRM = 800 V Three Phase Rectifier Bridge ID AV M = 27 A IFSM = 100 A in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C

Contextual Info: FUO 50-16N VRRM = 1600 V ID AV M = 50 A IFSM = 200 A Three Phase Rectifier Bridge in ISOPLUS i4-PACTM 1 3 4 5 1 2 5 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz

Contextual Info: FBE 22-06N1 VRRM = 600 V Id AV M = 20 A trr = 80 ns Fast Single Phase Rectifier Bridge in ISOPLUS i4-PAC 1 4 5 1 5 Pin฀3฀=฀not฀connected 2 Features Rectifier Bridge Symbol Maximum Ratings Conditions VRRM 600 V IdAV Id(AV)M TC฀=฀90°C,฀sine฀180°฀(per฀diode)

IXYS DS 145

Abstract: 40-12N FBO40-12N 4012-N
Contextual Info: Advanced Technical Information FBO40-12N VRRM = 1200 V Single Phase Rectifier Bridge ID AV M = 40 A IFSM = 250 A in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C

Schottky bridge

Contextual Info: FBS 10-06SC Advanced Technical Information Silicon Carbide Schottky Rectifier Bridge VRRM = 600 V IdAVM = 6.6 A Cjunction = 9 pF in ISOPLUS i4-PAC 1 4 5 1 5 2 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 600 V IFAV ID AV M IFSM TC = 90°C; sine 180°

Contextual Info: Advanced Technical Information Fast Three Phase Rectifier Bridge FUE 30-12N1 in ISOPLUS i4-PACTM VRRM = 1200 V ID AV M = 30 A trr = 130 ns 1 5 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 1200 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode)

22-06N1

Abstract: FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER fast recovery epitaxial diode Bridge isoplus ixys mounting
Contextual Info: Advanced Technical Information FBE 22-06N1 VRRM = 600 V Fast Single Phase Rectifier Bridge ID AV M = 20 A trr = 80 ns in ISOPLUS i4-PACTM 1 5 Input Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM 600 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode)

solar blocking diode

Contextual Info: Advanced Technical Information Dual Power Schottky Diode FSS 100-008A in ISOPLUS i4-PACTM VRRM = 80 V = 0.9 V VF IF AV M = 90 A 1 3 1 3 5 5 Features Symbol Conditions Maximum Ratings VRRM 80 V 85 90 A A 100 W IFAV IF(AV)M TC = 90°C; sine 180° TC = 90°C; d = 0.5 rectangular

Contextual Info: Advanced Technical Information FBE 22-06N1 VRRM = 600 V Fast Single Phase Rectifier Bridge ID AV M = 20 A trr = 80 ns in ISOPLUS i4-PACTM 1 5 Input Rectifier Bridge Conditions Maximum Ratings VRRM 600 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode)