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SMC Corporation of America JISB1252 M6(MY-J40) SPRING WASHER, MY1 SERIES \| SMC Corporation JISB1252 M6(MY-J40)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	JISB1252 M6(MY-J40)	Bulk		5 Weeks	1	1 $0.54 10 $0.54 100 $0.54 1000 $0.54 10000 $0.54	Get Quote
Hubbell Premise Wiring ISB12OW HOUSING, SURFACE MOUNT, 12 PORT, OW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	ISB12OW					1 $38.84 10 $26.29 100 $22.88 1000 $22.3 10000 $22.3	Buy Now
Hubbell Premise Wiring ISB12OWID HOUSING, SURFACE MOUNT, 12PORT, OW, GS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	ISB12OWID					1 - 10 $29.9 100 $29.9 1000 $29.9 10000 $29.9	Buy Now
Hubbell Premise Wiring ISB12BK HOUSING, SURFACE MOUNT, 12 PORT, BK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	ISB12BK					1 - 10 $29.9 100 $29.9 1000 $29.9 10000 $29.9	Buy Now
Hubbell Premise Wiring ISB12W HOUSING, SURFACE MOUNT, 12 PORT, WH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	ISB12W					1 $38.84 10 $26.29 100 $22.88 1000 $22.3 10000 $22.3	Buy Now

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ISB12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K1B2816 Abstract: No abstract text available Text: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length	Original	PDF	K1B2816B6M 8Mx16 K1B2816
ISB12000 Abstract: signal path designer Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u lly in de p e n d en t p o we r an d g rou n d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide	Original	PDF	ISB35000 ISB12000 signal path designer
K1S32161CD-FI70 Abstract: No abstract text available Text: K1S32161CD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 04, 2004 Preliminary 1.0 Finalize - Added Lead Free Product April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	PDF	K1S32161CD 2Mx16 K1S32161CD K1S32161CD-FI70
ba508 Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473 Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary	Original	PDF	K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
EM51M256A-15P Abstract: Em51M256A-15 Etron Etron Technology ISB12 Em51m256 Text: EtronTech Em51M256A 3.3V I/O 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Advanced CMOS Process	Original	PDF	Em51M256A 28-Pin 300-mil 10ns/12ns/15ns 004MAX 10MAX EM51M256A-15P Em51M256A-15 Etron Etron Technology ISB12 Em51m256
K1B6416B6C Abstract: UtRAM Density Text: K1B6416B6C UtRAM Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target March 11, 2004 Advance 0.1 Revised - Deleted Deep Power Down Mode support	Original	PDF	K1B6416B6C 4Mx16 K1B6416B7C 54ball 55/Typ. 35/Typ. K1B6416B6C UtRAM Density
K1S16161CA Abstract: K1S16161CA-I Text: Preliminary K1S16161CA UtRAM Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	PDF	K1S16161CA 1Mx16 K1S16161CA 55/Typ. 35/Typ. K1S16161CA-I
SGS-Thomson ball grid array Abstract: schematics power supply satellite receiver ISB35000 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484 Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u l ly i n de p en d en t p o we r an d g roun d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide	Original	PDF	ISB35000 SGS-Thomson ball grid array schematics power supply satellite receiver ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
EM51256C-15P Abstract: em51256 Etron Technology EM51256C-10J Text: EtronTech Em51256C 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5 5 24	Original	PDF	Em51256C 28-Pin 300-mil 10ns/12ns/15ns EM51256C-15P em51256 Etron Technology EM51256C-10J
EM51L256A-15J Abstract: Etron Technology Text: EtronTech Em51L256A 3.3V 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5	Original	PDF	Em51L256A 28-Pin 300-mil 10ns/12ns/15ns EM51L256A-15J Etron Technology
K1S3216BCD Abstract: No abstract text available Text: K1S3216BCD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft November 02, 2004 Preliminary 1.0 Finalize Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	PDF	K1S3216BCD 2Mx16 K1S3216BCD
Untitled Abstract: No abstract text available Text: ISB12000 SERIES CO N TIN UO US ARRAYS DATABOOK 1st ED ITIO N January 1990	OCR Scan	PDF	ISB12000
64X16 led matrix Abstract: TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100 Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SG S-THOMSON DATABOOKS DB O RDER CODE a 4 BIT MCU FAMILY ET9400 DBET9400ST/1	OCR Scan	PDF	ET9400 EF6801/04/05 CB12000 ISB12000 ISB9000 ISB18000 ST6326/27/28/ ST6356/57/58 ST6340/42/44/46 64X16 led matrix TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100
256x16 eprom Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1	OCR Scan	PDF	ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B

SGS M114S Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840 Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: CY7C291A CY7C292A/CY7C293A £i SEMICONDUCTOR *& Reprogrammable 2048 x 8 PROM Features • C apable of w ithstanding > 2001V sta tic discharge • Windowed for reprogrammability • CMOS for optimum speed/power Product Characteristics • High speed — 20 ns commercial	OCR Scan	PDF	CY7C291A CY7C292A/CY7C293A CY7C291 7C291A 7C293A) 7C292A) 91A-35PC CY7C291A-35DC CY7C293A-50DMB CY7C293A-50WMB
z80 microprocessor Abstract: Q193 CB12000 16 bit mcu ST9040 SGS-Thomson MCU st10 microwave databook Text: SGS-THOMSON DATABOOKS DESCRIPTION 4 BIT MCU FAMILY ET9400 8 BIT MCU FAMILIES EF6801/04/05 16 BIT MPUs & ASSOCIATED PERIPHERALS AUDIO POWER and PROCESSING ICs AUTOMOTIVE PRODUCTS CB12000 SERIES STANDARD CELLS CB12000 SERIES STANDARD CELL MODULE GENERATORS ANALOG CELLS AND ARRAYS	OCR Scan	PDF	ET9400 EF6801/04/05 CB12000 CB22000 ISB12000 ISB24000 ST9040 DBET9400ST/1 DB68XXST/1 z80 microprocessor Q193 16 bit mcu SGS-Thomson MCU st10 microwave databook
Untitled Abstract: No abstract text available Text: QS72211, QS72221, QS72231, QS72241 PRELIMINARY Q High-Speed CMOS 512/1K/2K/4K x 9 Parallel Clocked FIFO <»72211 q! ” “1 , QS72241 FEATURES DESCRIPTION • • • • • The QS72211/221/231/241 are high-speed 512/1K/ 2K/4Kx9 parallel, clocked FIFOs, respectively. These	OCR Scan	PDF	QS72211, QS72221, QS72231, QS72241 512/1K/2K/4K QS72211) QS72221) QS72231 QS72241 12-ns