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    ISB35130 Search Results

    ISB35130 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ISB35130 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-CC44 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-CC84 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-GQFP208 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-GQFP304 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-PGA300 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-PGA64 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-PowerQFP304 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-PowerQFP80 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-PQFP304 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-PQFP44 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-TQFP100 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-TQFP44 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF

    ISB35130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISB12000

    Abstract: signal path designer
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u lly in de p e n d en t p o we r an d g rou n d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		PDF ISB35000 ISB12000 signal path designer

    SGS-Thomson ball grid array

    Abstract: schematics power supply satellite receiver ISB35000 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u l ly i n de p en d en t p o we r an d g roun d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		PDF ISB35000 SGS-Thomson ball grid array schematics power supply satellite receiver ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484

    DPRAM

    Abstract: 256K DPRAM ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484 ISB35666
    Text: DIGITAL SEMICUSTOM CIRCUITS SEA OF GATES - STRUCTURED ARRAYS ISB 35000 SERIES 0.5 micron, triple level metal HCMOS Technology. Typical delay 0.21ns for 2-input NAND gate GENERAL FEATURES • ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance


    Original     		PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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