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    IS221 Price and Stock

    SPC Multicomp TTI-S22-1100-NAT

    Sleeving, Insulating 0.81Mm, Natural, 100Ft; Sleeving/Tubing Type:Insulating; Sleeving Material:Ptfe (Polytetrafluoroethylene); Sleeving Colour:Natural; Internal Diameter:0.81Mm; Length - Metric:30.5M; Length - Imperial:100Ft Rohs Compliant: Yes |Multicomp Pro TTI-S22-1100-NAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TTI-S22-1100-NAT SPOOL 99 1
    • 1 $69.09
    • 10 $69.09
    • 100 $69.09
    • 1000 $69.09
    • 10000 $69.09
    		Buy Now

    SPC Multicomp PVI-S22-1100-BLK

    Sleeving, Insulating, 0.69Mm, Black, 100Ft; Sleeving/Tubing Type:Insulating; Sleeving Material:Pvc (Polyvinylchloride); Sleeving Colour:Black; Internal Diameter:0.69Mm; Length - Metric:30.5M; Length - Imperial:100Ft; Colour:Black Rohs Compliant: Yes |Multicomp Pro PVI-S22-1100-BLK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PVI-S22-1100-BLK SPOOL 96 1
    • 1 $3.29
    • 10 $3.29
    • 100 $3.29
    • 1000 $3.29
    • 10000 $3.29
    		Buy Now

    SPC Multicomp TSI-S22-1100-NAT

    Sleeving, Insulating, 0.81Mm, Natural, 100Ft; Sleeving/Tubing Type:Insulating; Sleeving Material:Ptfe (Polytetrafluoroethylene); Sleeving Colour:Natural; Internal Diameter:0.81Mm; Length - Metric:30.5M; Length - Imperial:100Ft Rohs Compliant: Yes |Multicomp Pro TSI-S22-1100-NAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TSI-S22-1100-NAT SPOOL 16 1
    • 1 $30.59
    • 10 $30.59
    • 100 $30.59
    • 1000 $30.59
    • 10000 $30.59
    		Buy Now

    SPC Multicomp PVI-S22-1100-CLR

    Sleeving, Insulating, 0.69Mm, Transparent, 100Ft; Sleeving/Tubing Type:Insulating; Sleeving Material:Pvc (Polyvinylchloride); Sleeving Colour:Transparent; Internal Diameter:0.69Mm; Length - Metric:30.5M; Length - Imperial:100Ft Rohs Compliant: Yes |Multicomp Pro PVI-S22-1100-CLR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PVI-S22-1100-CLR SPOOL 3,000
    • 1 -
    • 10 -
    • 100 $22.71
    • 1000 $22.71
    • 10000 $22.71
    		Buy Now

    TE Connectivity 42036-1

    Terminals RING IS22-18 8 020BR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 42036-1 Reel 40,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    IS221 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IS221 Isocom Components 6V 50mA optically coupled bilaterial switch light activated zero voltage crossing triac Original PDF
    IS221G Isocom Components OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC Original PDF
    IS221SM Isocom Components OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC Original PDF
    IS221SMT&R Isocom Components OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC Original PDF
    IS221SMTR Isocom Components OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC Original PDF

    IS221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Zero Crossing Triac Detector

    Abstract: IS220 1000C 2600C E91231 IS221 IS222 IS223
    Text: IS220, IS221, IS222, IS223 OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 DESCRIPTION 1 2 6 5 3 4 1.2 The IS22_ Series are optically coupled isolators consisting of a Gallium Arsenide


    Original     		PDF IS220, IS221, IS222, IS223 E91231 DB92609-AAS/A2 Zero Crossing Triac Detector IS220 1000C 2600C E91231 IS221 IS222 IS223

    MWA0311

    Abstract: MWA0370 1S221 IS121 MWA0304 rf 157 L4166 mwa03
    Text: — Order this data sheet by MWA0304/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MWA0304 MWA0311 ,L - MWA0370 Monolithic Microwave Integrated Circuit . . . designed for narrow or wideband systems up to 3 GHz. . IF and RF applications in industrial and commercial


    Original     		PDF MWA0304/D MWA0304 MWA0311 MWA0370 MWA03' 03A-01 MWA0311 MWA0370 1S221 IS121 MWA0304 rf 157 L4166 mwa03

    MRF951

    Abstract: No abstract text available
    Text: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features


    Original     		PDF MRF951/D MRF951 MMBR951 MRF9511 MRF951 MK145BP,

    016Z

    Abstract: IS121 MWA0204 MWA0211 MWA0270 L25-100
    Text: Order this data sheet by MWA0204/D MOTOROLA TECHNICAL DATA MWA0204 MWA0217 ,L MWAO Monolithic Microwave Integratedcircuit . . . designed for narrow or wideband systems IF and RF applications in industrial and commercial up to 3 GHz. 12 dB Gain at 500 MHz Typ


    Original     		PDF MWA0204/D MWA0204 MWA0217 MWA0211 MK145BP, MWA021 MWA0270 016Z IS121 MWA0204 MWA0211 MWA0270 L25-100

    Micro-X Marking 865

    Abstract: No abstract text available
    Text: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: QS9000 Micro-X Marking 865

    uPC1653

    Abstract: UPC1653A UPC1653P uPC1654 414 monolithic amplifier
    Text: NEC UPC1653A UPC1653P 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 12 • BROAD FREQUENCY RESPONSE : 1300 MHz TYP AT 3 dB DOWN (TO-72) • INPUT AND OUTPUT MATCHED TO 50 f l • AVAILABLE IN CHIP OR HERMETIC PACKAGE


    OCR Scan     		PDF UPC1653A UPC1653P UPC1653 UPC1654. UPC1653A, UPC1653P uPC1654 414 monolithic amplifier

    IS12I

    Abstract: NE334S01
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE334S01 FEATURES_ MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz 24 - — -


    OCR Scan     		PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B 24-Hour IS12I

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for


    OCR Scan     		PDF CLX27 CLX27-00 MWP-25 CLX27-05 CLX27-10 CLX27-nn: QS9000

    Untitled

    Abstract: No abstract text available
    Text: NECSUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET SPACE QUALIFIED FEATURES_ NE23383B OUTLINE DIMENSIONS • SUPER LOW NOISE FIGURE: (Units in mm) PACKAGE OUTLINE 83B NF = 0.35 dB TVP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz


    OCR Scan     		PDF NE23383B NE23383B IS2212 IS12I IS12S21I

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST ID O


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 OT-89) 160jj NE46134-T1 24-Hour

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    881-1 nec

    Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
    Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S


    OCR Scan     		PDF b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    NBC 3111

    Abstract: EZ647 EZ64724 NEZ6472-4DL NEZ6472-8DL
    Text: NEZ6472-15D NEZ6472-15DL NEZ6472-8D NEZ6472-8DL NEZ6472-4D NEZ6472-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTPUT POWER AND EFFICIENCY vs. INPUT POWER • HIGH P out 18W 42.5 dBm Typ PidB for NEZ6472-15D/15DL 9W (39.5 dBm) Typ PidB for NEZ6472-8D/8DL


    OCR Scan     		PDF NEZ6472-15D/15DL NEZ6472-8D/8DL NEZ6472-4D/4DL NEZ6472-15D NEZ6472-15DL NEZ6472-8D NEZ6472-8DL NEZ6472-4D NEZ6472-4DL -15DL NBC 3111 EZ647 EZ64724 NEZ6472-4DL

    str 0765

    Abstract: gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750
    Text: 4 W 14 GHz INTERNALLY NEZ1414 4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIG H O U TPU T PO W ER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENC Y: 30% TYP • IN D U STR Y STA N D A R D PACKAG ING


    OCR Scan     		PDF NEZ1414 NEZ1414-4E redu50 str 0765 gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750

    str 2652

    Abstract: No abstract text available
    Text: 2 W 14 GHz INTERNALLY NEZ1414_2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES HIGH O U TPU T POW ER: 2 W MIN PACKAGE OUTLINE X-17 HIG H LINEAR GAIN: 7.0 dB MIN HIG H EFFICIENC Y: 30% TYP 8 .2 5 ± 0 .1 5 IN D U STR Y S T A N D A R D PACKAG ING IN TER N A LLY M ATCH ED FOR O PTIM UM


    OCR Scan     		PDF NEZ1414 EZ1414-2E IS12I IS211 str 2652

    JF11

    Abstract: NE02133-T1B
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression


    OCR Scan     		PDF NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11

    ST 80500 transistor

    Abstract: ST 80500 LB 11911 ST 9727 74200 MARKING AG1 NE687 ka 2201 323 IK 9094 cd 9094
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES_ • LOW NOISE: 1.3 dB AT 2.0 GHz 4 fr • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SO T 343 ST Y LE 19(3 PIN ULTRA S U P E R


    OCR Scan     		PDF NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 ST 80500 transistor ST 80500 LB 11911 ST 9727 74200 MARKING AG1 ka 2201 323 IK 9094 cd 9094

    sot-343

    Abstract: 2sc5508
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCH TRANSISTOR NE662M04 FEATURES_ • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    OCR Scan     		PDF OT-343 NE662M04 NE662M04 voltage/l51 IS21I IS12I sot-343 2sc5508

    LB 1639

    Abstract: transistor TT 3043
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043

    SAA 1006

    Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


    OCR Scan     		PDF NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K