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    NE461 Price and Stock

    California Eastern Laboratories (CEL) NE46134-T1

    RF TRANS NPN 15V 5.5GHZ SOT-89
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    California Eastern Laboratories (CEL) NE46134-AZ

    RF TRANS NPN 15V 5.5GHZ SOT-89
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    California Eastern Laboratories (CEL) NE461M02-AZ

    RF TRANS NPN 15V SOT-89
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    California Eastern Laboratories (CEL) NE46134-T1-AZ

    RF TRANS NPN 15V 5.5GHZ SOT-89
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    Quest Components NE46134-T1-AZ 4
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    California Eastern Laboratories (CEL) NE461M02-T1-AZ

    RF TRANS NPN 15V SOT-89
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    DigiKey NE461M02-T1-AZ Digi-Reel 1
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    NE461 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE46100 NEC NPN medium power microwave transistor. Original PDF
    NE46100 NEC NPN MEDIUM POWER MICROWAVE TRANSISTOR Original PDF
    NE46134 NEC NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR Original PDF
    NE46134 NEC Semiconductor Selection Guide Original PDF
    NE46134-AZ California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-89 Original PDF
    NE46134-AZ NEC TRANS GP BJT NPN 15V 0.25A 3SOT-89 Original PDF
    NE46134-T1 NEC NPN medium power microwave transistor. Original PDF
    NE46134-T1 NEC NPN MEDIUM POWER MICROWAVE TRANSISTOR Original PDF
    NE46134-T1-AZ California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-89 Original PDF
    NE46134-T1-AZ NEC TRANS GP BJT NPN 15V 0.25A 3SOT-89 Original PDF
    NE46134-T1-QR-AZ CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - SAME AS 2SC4536 NPN SILICON MEDI Original PDF
    NE46134-T1-QS-AZ CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - SAME AS 2SC4536 NPN SILICON MEDI Original PDF
    NE461M02 NEC NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER Original PDF
    NE461M02-AZ NEC TRANS GP BJT NPN 15V 0.25A 3MINIMOLD Original PDF
    NE461M02-T1 NEC NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER Original PDF
    NE461M02-T1-AZ NEC TRANS GP BJT NPN 15V 0.25A 3MINIMOLD T/R Original PDF
    NE461M02-T1-QR-AZ CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - SAME AS 2SC5337 NPN SILICON MEDI Original PDF
    NE461M02-T1-QS-AZ CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - SAME AS 2SC5337 NPN SILICON MEDI Original PDF

    NE461 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE41634

    Abstract: NE46134 2SC4536 AN-1001 NE46100 S21E 7100D
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original     		NE46100 NE46134 NE461 24-Hour NE41634 NE46134 2SC4536 AN-1001 NE46100 S21E 7100D PDF

    NE46134

    Abstract: NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel
    Text: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original     		NE46100 NE46134 NE461 NE46134-T1 NE46134 NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel PDF

    transistor 224-1 base collector emitter

    Abstract: transistor 0588
    Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector


    Original     		NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588 PDF

    ic ca 747

    Abstract: NE461M02 NE461M02-T1 S21E ic 5209
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 • LOW DISTORTION FIGURE: IM2 = 59 dB TYP at VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP at VCE = 10 V, IC = 50 mA


    Original     		NE461M02 OT-89 NE461M02 24-Hour ic ca 747 NE461M02-T1 S21E ic 5209 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST ID O


    OCR Scan     		NE46100 NE46134 NE46134 NE461 OT-89) 160jj NE46134-T1 24-Hour PDF

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 PDF

    SOT89 Z100

    Abstract: nec 8681 NPN transistor 1815 NE461M02 2sC5337
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION:


    OCR Scan     		OT-89 NE461M02 NE461M02 SOT89 Z100 nec 8681 NPN transistor 1815 2sC5337 PDF

    MJ 15007 transistor

    Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent PDF

    NE46134-T1

    Abstract: No abstract text available
    Text: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high


    Original     		NE46100 NE46134 NE46134 NE461 NE46100, OT-89) NE46134-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NE46134 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)250m Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		NE46134 PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0


    OCR Scan     		NE46100 NE46134 NE461M02 NE85634 NE856M02 OT-89 NE94430 NE94433 PDF

    ne46134

    Abstract: NE46134 equivalent ne461
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent PDF

    NE46100

    Abstract: NE46134-T1-AZ NE46134 2SC4536 AN-1001 S21E transistor at 1438 6206 SOT-89 0821 p4tl3-010
    Text: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original     		NE46100 NE46134 NE461 NE46100 NE46134-T1-AZ NE46134 2SC4536 AN-1001 S21E transistor at 1438 6206 SOT-89 0821 p4tl3-010 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		NE46100 NE46134 NE46134 NE461 7100D IS12I J52lL IS12S21I PDF

    NE46134

    Abstract: FRO 021 0027 2SC4536 AN-1001 NE46100 S21E
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original     		NE46100 NE46134 NE461 NE46134 FRO 021 0027 2SC4536 AN-1001 NE46100 S21E PDF

    HA 3089 1750

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 m A M AX • NEW HIGH GAIN POWER MINI-MOLD PACKAGE BOTTOM VIEW (S O T-89 T Y P E )


    OCR Scan     		NE461M02 24-Hour HA 3089 1750 PDF

    NE68018

    Abstract: 814T
    Text: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89


    OCR Scan     		NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T PDF

    NE461M02

    Abstract: 2SC5337 NE461M02-T1 S21E npn 1349
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz


    Original     		OT-89 NE461M02 NE461M02 24-Hour 2SC5337 NE461M02-T1 S21E npn 1349 PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT PDF

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 PDF

    HFBR-0300Z

    Abstract: HFBR-0400Z HFBR-1312TZ HFBR-2316TZ HFBR-2416Z HFBR2316TZ
    Text: HFBR-0300Z Series HFBR-1312TZ Transmitter HFBR-2316TZ Receiver 1300 nm Fiber Optic Transmitter and Receiver Data Sheet Description Features The HFBR-0300Z Series is designed to provide the most cost-effective 1300 nm fiber optic links for a wide variety of data communication applications from


    Original     		HFBR-0300Z HFBR-1312TZ HFBR-2316TZ HFBR-0400Z 5988-2576EN 5989-4776EN HFBR-0400Z HFBR-2416Z HFBR2316TZ PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    HFBR-4411

    Abstract: HFBR-0300 HFBR-0400 HFBR-1312T HFBR-14XX HFBR-2316T HFBR-2416 HFBR-24X6
    Text: 1300 nm Fiber Optic Transmitter and Receiver Technical Data HFBR-0300 Series: HFBR-1312T Transmitter HFBR-2316T Receiver Features • Low Cost Fiber Optic Link • Signal Rates over 155 Megabaud • 1300 nm Wavelength • Link Distances over 5 km • Dual-in-line Package PanelMountable ST* and SC


    Original     		HFBR-0300 HFBR-1312T HFBR-2316T HFBR-0400 5091-7380E 5965-3611E HFBR-4411 HFBR-0400 HFBR-14XX HFBR-2416 HFBR-24X6 PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF