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    IRFS640A Price and Stock

    Rochester Electronics LLC IRFS640A

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS640A Bulk 2,576 606
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    • 1000 $0.5
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    FAIRCHILD IRFS640A

    IRFS640A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRFS640A 2,326 700
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    • 1000 $0.5065
    • 10000 $0.5065
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    Fairchild Semiconductor Corporation IRFS640A

    9.8A, 200V, 0.18ohm, N-Channel Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFS640A 2,576 1
    • 1 $0.4767
    • 10 $0.4767
    • 100 $0.4481
    • 1000 $0.4052
    • 10000 $0.4052
    		Buy Now

    IRFS640A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS640A Fairchild Semiconductor Rugged Gate Oxide Technology Original PDF
    IRFS640A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS640A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS640A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS640A Samsung Electronics Improved gate charge Scan PDF

    IRFS640A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ld18a

    Abstract: IRFS640A OA 91 diode T0-220F
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V ■ Lower RDS(ON) : 0 .1 4 4 £ l(T y p .) 00 Rugged Gate Oxide Technology


    OCR Scan     		IRFS640A ld18a IRFS640A OA 91 diode T0-220F PDF

    IRFS640A

    Abstract: No abstract text available
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		IRFS640A O-220F IRFS640A PDF

    IRFS640A

    Abstract: No abstract text available
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ V DS = 200V


    Original     		IRFS640A O-220F IRFS640A PDF

    IRFS640A

    Abstract: No abstract text available
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V ■ Lower RDS(ON) : 0 .1 4 4 £ l(T y p .) 00 Rugged Gate Oxide Technology


    OCR Scan     		IRFS640A IRFS640A PDF

    IRFS640A

    Abstract: IRFS640
    Text: IRFS640A Advanced Power M O SFET FEATURES D S S R u g g e d G a te O x id e T e c h n o lo g y • L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n = ■ E x te n d e d S a fe O p e ra tin g A re a ■ L o w e r L e a k a g e C u rre n t : 1 0 |jA (M a x .) @


    OCR Scan     		IRFS640A IRFS640A IRFS640 PDF

    IRFS640A

    Abstract: mosfet39 IRFS640
    Text: IRFS640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax @ VDS = 200V Lower R d^on) : 0.150 i i (Typ.)


    OCR Scan     		IRFS640A IRFS640A mosfet39 IRFS640 PDF

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    IRFS630A

    Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
    Text: Discrete MOSFETs TO-220F RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220F N-Channel FQPF85N06 60 Single 0.01 - - - 86 53 62 FQPF65N06 60 Single 0.016 - - - 48 40 56


    Original     		O-220F O-220F FQPF85N06 FQPF65N06 FQPF55N06 FQPF50N06 FQPF30N06 FQPF20N06 FQPF13N06 FQPF50N06L IRFS630A IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15 PDF

    IRFS640A

    Abstract: IRFS640
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF640B/IRFS640B O-220F IRFS640B FP001 IRFS640A IRFS640 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


    Original     		IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A PDF

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


    OCR Scan     		SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A PDF

    lm98a

    Abstract: LS98 ERFS640A D697
    Text: ERFS640A Advanced Power MOSFET FEATURES BVDss “ 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA Max. @ VDS= 200V


    OCR Scan     		ERFS640A IRFS640A lm98a LS98 ERFS640A D697 PDF