IRFP452 ST Search Results

IRFP450

Abstract: IRFP451 bonding TO-247 IRFP453 IRFP452
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 H a rris 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFP450

Abstract: IRFP452 IRFP451 IRFP453 TA17435 TB334 irfp-450
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 S E M I C O N D U C T O R 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 12A and 14A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IREP450

Abstract: irfp450 FP450 DIODE C549 IRFP451 IRFP452 diode c552 C546 A FP453 diode C546
Contextual Info: HE D I 4Û55M5E 00007113 »4 | Data Sheet No. PD-9.458B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED* HEXFETTRANSISTORS IM - C H A N N E L I « R IRFP45Q IRFP451 IRFP452 IRFP453 Product Summary 500 Volt, 0.40 Ohm HEXFET

Contextual Info: H a r r IRFP450, IRFP451, IRFP452, IRFP453 i s s e m i c o n d u c t o r 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features 12A and 14A, 450V and 500V High Input Impedance These are N-Channel enhancement mode silicon gate

IRFP 450 application

Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
Contextual Info: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5

IRFP 450 application

Abstract: transistor irfp IRFP 450 SCHEMATIC WITH IRFP 450 IRFP450F irfp hi power power switching with IRFP450 schematic IRFP453FI irfp
Contextual Info: F Z 7 S G S -T H O M S O N *7Æ» IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI 500 500 450 450 500 500 450 450 V V V V V V V V ^DS<on

IRFP450

Abstract: IRFP 450 application IRFP451 IRFP450 POWER IRFP452 IRFP453 P452 application IRFP450 IQR 2400 JVM RELAY
Contextual Info: -Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 50 75 100 125 T q . C A S E T E M P E R A T U R E °C Fig. 12 — T yp ica l O n-R e sistance V s. D rain C urrent Fig. 13 — M a x im u m D ra in C u rre n t V s. Case Tem perature T E l * 0.5 B V q S S

IRFP450

Abstract: IRFP452 irfp450 samsung IRFP451 IRFP453 IRFP250 IRFP251 IRFP252 IRFP253 tr irfp450
Contextual Info: [ 7964142 ÏF lT T tm M a INC SAMSUNG S E M I C ONDUCTOR 00[]52HLt 3 98 D 0 5 2 2 4 I D T ~ 3 ñ -13 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

Irfp450

Contextual Info: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

Contextual Info: • 43D5571 0D5MS3S t.4T gì HARRIS ■ HAS IR FP450/451/452/453 IRFP450R/451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package TO -247 TOP VIEW • 12A and 14A, 450V - 500V • ro s o n = 0 .4 0 and 0 .5 fi

irfp450

Abstract: irf450 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching
Contextual Info: IRFP450/451/452/453 IRF450/451/452/453 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

FP450

Abstract: 451R mosfet 4532 IRFP452 4532 MOSFET
Contextual Info: 2 3 H A R R IS IR FP450/451/452/453 IR FP450R /451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 12A and 14A, 450V - 500V TOP VIEW • rDS on = 0 .4 ii and 0 .5 0 • Single Pulse Avalanche Energy Rated*

IRFP452

Abstract: IRFP453 Scans-00102310 GE 048 TRANSISTOR
Contextual Info: IRFP452,453 [F U F 12 AMPERES 500, 450 VOLTS RDS ON =0.5 n RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

IRFP360

Abstract: IRFPF30 S/IRFPE52 irfp9240
Contextual Info: HEXFET Power MOSFETs International üöU Rectifier Plastic Insertable Package TO-247 N-Channel Part Number V q s D'ai» Source Voltage Volts fy)S(on) On-State Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) >DM Drain Current (Amps) P q Max

1RFP360

Abstract: 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP443 IRFP448 IRFP9240 IRFP9242
Contextual Info: THOMSON/ DISTRIBUTOR SflE D • TD2ba73 International t o r Rectifier Cl[]05ñ04 3TD ■ HEXFET Power MOSFETs Plastic insertable Package T O -2 4 7 N-Channel Part Number V q s Drain Source Voltage (Volts) IRFP342 IRFP340 IRFP352 IRFP350 IRFP362 IRFP360 400

IXTH15N45A

Contextual Info: 4686226 I X Y S 03 CORP d F | 4 1. f l t=,2 2 1> D D O O E I S 2 |~~ / 3 / " □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V

IRFP450 inverter

Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
Contextual Info: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .

IXTP4N50A

Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

SGSP369

Abstract: TSD4M450V SGSP479 IRFP450fi IRF840FI sgsp579 SGSP239 SGSP364 SGSP474 MTP3N6
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> >d Package Type (A) •d max ptot Sfs min Ciss max (A) (W) (mho) (pF) 450 450 450 450 450 1.5 1.5 1.5 1.1 1.1 2.5 2.5 2.5 4.4 4.4 TO 220 ISOWATT 220 TO 220 TO 220 ISOWATT 220

1rfp450

Abstract: 1rfp460 RFP450 IRFP450R IRFP462 IRF450R IRFP RE 40 IRFR452 MC 4528 IRFP450
Contextual Info: 2 HARRIS IRFP450/451/452/453 IRFP450R/451R/452R/453B N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 TOP VIEW • 12A and 14A, 450V - 500V • rDs on) = 0 -4 fi and 0 .5 0 • Single Pulse Avalanche Energy Rated* 3 SOURCE

TSD4M450V

Abstract: SGSP479 SGSP239 tsd4m45 IRF840FI SGSP369 SGSP474 STHV82 TSD4M250V TSD4M351V
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500