IXTP2N95 Search Results

IXTP2N95 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP2N95		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTP2N95		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTP2N95		Sharp	950 V, 2 A, sourse-drain diode		Scan	PDF
IXTP2N95A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTP2N95A		IXYS	High Voltage Power MOSFETs		Scan	PDF

IXTP2N95 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	PDF	IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
IXTP4N50A Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100 Text: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T \|~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80	OCR Scan	PDF	IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP4N50A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460
2N95A Abstract: 2N95 2N100 IXTM2N100 IXTM2N95 IXTP2N100 IXTP2N95 Text: 1ÖE D I X Y S CORP • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 A M PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous	OCR Scan	PDF	IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 1XTM2N100 O-220 300/js, 2N95A 2N95 2N100 IXTM2N95
ZO 109 wa Abstract: ixtm2N100 PN channel MOSFET 10A ixtm2N95 Text: 1ÖE I X Y S CORP D • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 AM PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous	OCR Scan	PDF	IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 CHA420 O-204 ZO 109 wa PN channel MOSFET 10A ixtm2N95
IRF250 Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	PDF	00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	PDF