IRFP360 Search Results
IRFP360 Price and Stock
Vishay Siliconix IRFP360PBFMOSFET N-CH 400V 23A TO247-3 |
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IRFP360PBF | Tube | 1,735 | 1 |
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IRFP360PBF | Bulk | 500 |
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IRFP360PBF | 2,475 | 1 |
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IRFP360PBF | 1,649 |
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Vishay Siliconix IRFP360LCPBFMOSFET N-CH 400V 23A TO247-3 |
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IRFP360LCPBF | Tube | 638 | 1 |
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IRFP360LCPBF | Bulk | 500 |
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IRFP360LCPBF | 50 | 1 |
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Vishay Siliconix IRFP360MOSFET N-CH 400V 23A TO247-3 |
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IRFP360 | Tube |
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Vishay Siliconix IRFP360LCMOSFET N-CH 400V 23A TO247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFP360LC | Tube | 500 |
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Vishay Intertechnologies IRFP360PBFMOSFET N-CHANNEL 400V - Bulk (Alt: IRFP360PBF) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFP360PBF | Bulk | 500 | 30 Weeks | 500 |
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IRFP360PBF | 755 |
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IRFP360PBF | 1,800 | 25 |
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IRFP360PBF | 353 | 30 Weeks | 1 |
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IRFP360PBF | Bulk | 500 | 500 |
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IRFP360PBF | Bulk | 448 | 3 Weeks | 1 |
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IRFP360PBF | Tube | 8,400 | 50 |
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IRFP360PBF | 276 | 1 |
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IRFP360PBF | 16,000 |
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IRFP360PBF | 32 Weeks | 500 |
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IRFP360PBF | 31 Weeks | 25 |
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IRFP360PBF | 7,000 | 1 |
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IRFP360 Datasheets (27)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP360 | Harris Semiconductor | Power MOSFET Selection Guide | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 |
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23A, 400V, 0.200 ?, N-Channel Power MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 |
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400V fast recovery epitaxial diode (FRED) | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 |
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Power MOSFETs Cross Reference Guide | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 23A TO-247AC | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | International Rectifier | Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | International Rectifier | Rugged Series Power MOSFETs - N-Channel | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | International Rectifier | TO-247 HEXFET Power MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | International Rectifier | TO-247 N-Channel Plastic Package HEXFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 |
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High Voltage Power MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 |
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High Voltage Power MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP360 | Unknown | Shortform Datasheet & Cross References Data | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360LC | International Rectifier | HEXFET Power Mosfet | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360LC | International Rectifier | HEXFET Power MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP360LC |
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Power MOSFETs Cross Reference Guide | Original |
IRFP360 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRFP360LCContextual Info: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve |
Original |
IRFP360LC, SiHFP360LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP360LC | |
Contextual Info: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110 |
Original |
IRFP360, SiHFP360 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
IRF360LCContextual Info: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω |
Original |
IRFP360LC 08-Mar-07 IRF360LC | |
IRFP360LCContextual Info: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve |
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IRFP360LC, SiHFP360LC O-247 18-Jul-08 IRFP360LC | |
irfp360Contextual Info: IRFP360 S e m iconductor Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field |
OCR Scan |
IRFP360 O-247 D4-345 irfp360 | |
IRF360LC
Abstract: IRFP360LC IRFPE30
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IRFP360LC staFPE30 IRF360LC IRFP360LC IRFPE30 | |
Contextual Info: IRFP360, IRFP362 HARRIS S E M I C O N D U C T O R 20A and 23A, 400V, 0.2 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 23A, 400V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the |
OCR Scan |
IRFP360, IRFP362 25CAPACITANCE | |
IRFP360Contextual Info: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 30 • Fast Switching |
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IRFP360, SiHFP360 O-247 O-247 IRFP360 | |
T0247AC
Abstract: IRFP450LC irfp9240
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OCR Scan |
O-247AC T0-247AC IRFP350LC IRFP360LC IRFP450LC IRFP460LC IRFPC50LC IRFPC60LC T0247AC irfp9240 | |
irfp360Contextual Info: IRFP360, IRFP362 fÇ j HARRIS S E M I C O N D U C T O R 20A and 23A, 400V, 0.2 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 23A, 400V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the |
OCR Scan |
IRFP360, IRFP362 TA17464. IRFP362 irfp360 | |
Contextual Info: PD - 94951 IRFP360LCPbF • Lead-Free 1/28/04 Document Number: 91227 www.vishay.com 1 IRFP360LCPbF Document Number: 91227 www.vishay.com 2 IRFP360LCPbF Document Number: 91227 www.vishay.com 3 IRFP360LCPbF Document Number: 91227 www.vishay.com 4 IRFP360LCPbF |
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IRFP360LCPbF O-247AC 08-Mar-07 | |
irf360lc
Abstract: ID 9302 IRFP360LC IRFPE30
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IRFP360LC IRFPE30 irf360lc ID 9302 IRFP360LC IRFPE30 | |
IRFP360Contextual Info: PD-9.568B International ^ Rectifier IRFP360 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^DSS _ 400V ^D S on - 0 - 2 0 Q |
OCR Scan |
IRFP360 O-247 T0-220 O-218 IRFP360 | |
IRFP360
Abstract: TB334
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IRFP360 O-247 IRFP360 TB334 | |
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IRFP360Contextual Info: International Eësr]Rectifier PD-9.568B IRFP360 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 400V R DS on = 0 - 2 0 0 |
OCR Scan |
IRFP360 O-247 T0-220 O-218 50kc2 | |
irfp360Contextual Info: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110 |
Original |
IRFP360, SiHFP360 2002/95/EC O-247AC O-247AC O-220AB 11-Mar-11 irfp360 | |
1RFP360
Abstract: 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP443 IRFP448 IRFP9240 IRFP9242
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OCR Scan |
O-247 TD2ba73 IRFP342 IRFP340 IRFP352 IRFP350 IRFP362 1RFP360 IRFP443 IRFP441 1RFP360 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP448 IRFP9240 IRFP9242 | |
Contextual Info: IRFP360_RC, SiHFP360_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
IRFP360 SiHFP360 AN609, 18-Jun-10 | |
Contextual Info: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve |
Original |
IRFP360LC, SiHFP360LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFP360Contextual Info: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110 |
Original |
IRFP360, SiHFP360 2002/95/EC O-247AC 11-Mar-11 IRFP360 | |
IRFP360LCContextual Info: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve |
Original |
IRFP360LC, SiHFP360LC 2002/95/EC 11-Mar-11 IRFP360LC | |
IRFP360Contextual Info: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 30 • Fast Switching |
Original |
IRFP360, SiHFP360 O-247 O-247 O-220 12-Mar-07 IRFP360 | |
fp360Contextual Info: IRFP360 IRFP362 2 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Package F e a tu re s T O -2 4 7 • 20A and 23A, 400V TOP VIEW • rD S °n) = 0 .2 0 0 and 0 .2 5 0 • Single Pulse Avalanche Energy Rated • SOA Is Power-Dlssipation Limited |
OCR Scan |
IRFP360 IRFP362 IRFP362 fp360 | |
ST hexfet to 247
Abstract: IRFP360PBF 035H IRFPE30
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Original |
IRFP360PbF O-247AC O-247-AC. ST hexfet to 247 IRFP360PBF 035H IRFPE30 |