IRFP253 Search Results

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

IRFP250

Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
Contextual Info: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: H a r r IRFP250, IRFP251, IRFP252, IRFP253 i s s e m i c o n d u c t o r 27 A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFP250R

Abstract: irfp 250r IRFP251R p250a IRFP252R IRFP253R IRFP25
Contextual Info: Rugged Power MOSFETs_ IRFP250R, IRFP251R, IRFP252R, IRFP253R File Num ber 2016 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■

IRFP250

Abstract: irfp250 DRIVER irfp250 mosfet T-39-15 irfp250 applications pulse transformer IRFP253 irfp250 applications IRFP250 international rectifier IRFP251 IRFP252
Contextual Info: HE D I 4flS5MSa 0000750 2 | Data Sheet No. PD-9.443B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP250 IRFP251 I N-CHANNEL IRFP252 IRFP253 Product Summary 200 Volt, 0.085 Ohm HEXFET TO-247AC TO-3P Plastic Package

IRFP250

Contextual Info: H a IRFP250, IRFP251, IRFP252, IRFP253 r r i s ” “ I CONDUCTOE 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150 V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Irfp250

Abstract: irfp250 mosfet irfp252
Contextual Info: IRFP250, IRFP251, IRFP252, IRFP253 S E M I C O N D U C T O R 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRFP250

Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
Contextual Info: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e

HARRIS

Abstract: IRFP250R diode GG 79 irfp250 mosfet irfp 250r mosfet irfp 250 N
Contextual Info: 23 H A R R I S IRFP250/251/252/253 IRFP250R/251R/252R/253R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 4 7 • 27A and 33A, 150V - 200V TOP VIEW • rDS on = 0 .0 8 5 0 and 0.120H • Single Pulse Avalanche Energy Rated*

IRFP040

Abstract: IRFP141 IRFP142 IRFP143 IRF9613 irfp245 IRF9620 IRF9632 IRF9643
Contextual Info: HEXFET Power MOSFETs International S Rectifier Plastic Insertable Package TO-220 P-Channel s Drain Source Voltage Volts Vq Part Number RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max

Irfp450

Contextual Info: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

1rfp240

Abstract: 1RFP340 1RFP360 IRFP310 IRFP232 1rfp254 IRFP240 IRFP141 IRFP321 IRFP151
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V ) fë 1 (T a= 2 5 °C ) Id Pd * /CH * /CH (A ) (W) Ig ss (n A ) Vg s I d ss Vg s (V ) th ) m in max (V ) (V ) ma) (V ) (n A ) fè F D s (o n ) Vd s = Vg s Id Vd s ( ft % g fs Io (o n ) C is s Coss C rss

irf250 dc motor

Abstract: IRF250 ic data
Contextual Info: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a

3849

Contextual Info: 4686226 I X Y S CORP □IXYS ^ d F J M böbS Sti Q je j- ^ u . TECHNICAL DATA SHEET August 1988 DATA SHE ET NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • • . 2 0 0 V

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

IRFP250

Abstract: 1RFP250 IRFP253 RIKC IRFP251 IRFP252 irfp250 mosfet samsung MOSFET
Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR I NC ]>e "| T T b M m S DGDSlflM b | - N-CHANNEL POWER M OSFETS IRFP250/251Z252/253 FEATURES • Low RDS on N • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

IRFP450

Abstract: IRFP452 irfp450 samsung IRFP451 IRFP453 IRFP250 IRFP251 IRFP252 IRFP253 tr irfp450
Contextual Info: [ 7964142 ÏF lT T tm M a INC SAMSUNG S E M I C ONDUCTOR 00[]52HLt 3 98 D 0 5 2 2 4 I D T ~ 3 ñ -13 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

1RFP240

Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
Contextual Info: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

1rfp360

Abstract: IRFP143 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP141 IRFP151 IRFP153 IRFP241
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V) fë 1 (Ta=25°C) Id Pd * /CH * /CH (A) (W) Ig ss (nA) V g s th) Id ss Vg s (V) min max (V) (V) a ) (V) (nA) fè FD s ( o n ) Vd s = Vg s Id Vd s (m ft % g fs Io(on) Ciss Coss Crss * B m % Vg s =0 (max)

SSH60N06

Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
Contextual Info: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151