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    IRFD214 Search Results

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    IRFD214 Price and Stock

    Vishay Siliconix IRFD214PBF

    MOSFET N-CH 250V 450MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD214PBF Tube 2,500
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    • 10000 $0.54256
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    Vishay Intertechnologies IRFD214

    MOSFET N-CHANNEL 250V - Tape and Reel (Alt: IRFD214)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFD214 Reel 2,500
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    Mouser Electronics IRFD214
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    Vishay Intertechnologies IRFD214PBF

    MOSFET N-CHANNEL 250V - Tape and Reel (Alt: IRFD214PBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFD214PBF Reel 2,500
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    • 10000 $0.484
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    IRFD214 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD214 International Rectifier HEXFET Power Mosfet Original PDF
    IRFD214 International Rectifier HEXFET Power MOSFET Original PDF
    IRFD214 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD214 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 450MA 4-DIP Original PDF
    IRFD214 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, .57A, Pkg Style HEXDIP Scan PDF
    IRFD214 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD214PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFD214PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 450MA 4-DIP Original PDF

    IRFD214 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD214

    Abstract: n mosfet low vgs
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 18-Jul-08 IRFD214 n mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD214_RC, SiHFD214_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD214 SiHFD214 AN609, 25-Oct-10 5141m 6847m 6431m

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95931 IRFD214PbF • Lead-Free Document Number: 91130 10/29/04 www.vishay.com 1 IRFD214PbF Document Number: 91130 www.vishay.com 2 IRFD214PbF Document Number: 91130 www.vishay.com 3 IRFD214PbF Document Number: 91130 www.vishay.com 4 IRFD214PbF Document Number: 91130


    Original     		PDF IRFD214PbF IRFD120 IRFD120

    7105

    Abstract: IRFD120 marking tac
    Text: PD- 95931 IRFD214PbF • Lead-Free www.irf.com 1 10/29/04 IRFD214PbF 2 www.irf.com IRFD214PbF www.irf.com 3 IRFD214PbF 4 www.irf.com IRFD214PbF www.irf.com 5 IRFD214PbF 6 www.irf.com IRFD214PbF www.irf.com 7 IRFD214PbF Hexdip Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFD214PbF IRFD120 7105 IRFD120 marking tac

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD214 08-Mar-07

    IRFD214

    Abstract: SiHFD214
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 18-Jul-08 IRFD214

    SiHFD214

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 18-Jul-08

    SiHFD214

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFD214

    Abstract: No abstract text available
    Text: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD214 RFD214 IRFD214

    IRFD214

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω


    Original     		PDF IRFD214 IRFD214

    IRFD214

    Abstract: No abstract text available
    Text: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD214 12-Mar-07 IRFD214

    Untitled

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 11-Mar-11

    SiHFD214

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 12-Mar-07

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF3205 equivalent

    Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
    Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test


    Original     		PDF O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    irf 425

    Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
    Text: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815


    Original     		PDF HIP4080AIP ICM7243BIPL IRF3515S IRF840 HIP4081AIP ICM7555CN IRF3710 HIP4082IP ICM7555IBA irf 425 ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: International ¡^Rectifier_ HEXFET Power MOSFET P D -9.1271 IRFD214 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d ss = 2 5 0 V ^ D S o n = 2 . 0 ß


    OCR Scan     		PDF IRFD214 DQ2244S

    fu110

    Abstract: No abstract text available
    Text: I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS V B%SS Draln-to-Source BreakdownVoltage (Volt. Part Number RDSfon) On-State Resistance (Ohms) iQContinuous Drain Current 100* C 25* C (Amps) (Amps) RthJC Max Thermal Resistance row) PdOTo 2S“C


    OCR Scan     		PDF O-251AA IRFD9014 IRFD9024 IRFD9110 IRFD9120 IRFD9210 IRFD9220 IRFU4105 IRFU014 IRFU024N fu110