IRF520 GE Search Results

irf520 mosfet

Abstract: IRF520 circuit diagram irf520 irf520 switch transistor equivalent irf520 MOSFET IRF520
Contextual Info: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

irf520 mosfet

Abstract: irf520 switch IRF520
Contextual Info: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

IRF520 mosfet

Abstract: IRF520
Contextual Info: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

IRF520

Abstract: transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
Contextual Info: IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.27 Ω < 0.27 Ω 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

Contextual Info: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics

Power MOSFETs Application Notes irf520

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRF520

Abstract: International Rectifier IRF520 IRF52
Contextual Info: PD-9.313K International S Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V R DS on = 0 .2 7 Q

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

irf520 mosfet

Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

1RF520

Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
Contextual Info: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2

IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Contextual Info: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

International Rectifier IRF520

Contextual Info: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: 7 SGS-THOMSON */ =7 # M MI[Li ïrGMO(gS IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox

transistor IRF520

Abstract: IRF520 mos die 312c IRF52
Contextual Info: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

IRF520 application note

Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
Contextual Info: HE D I Data Sheet No. PD-9.313J 40 55 4 5 5 □□00 44 2 2 | T-39-11 INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER I I O R I REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF52Q IRFS21

1RF122

Abstract: IRFS20 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 0-30Q IRF641
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jo p e ie s Device aaM O dSO W T0-220AB /o V T0-202AA C— lt~\1 II /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150

VN0108N2

Abstract: irf120 IRF232 IRF240 IRF422 IRF522 IRF540 IRF632 IRF640 IRF822
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jo p e ie s Device aaM O dSO W T0-220AB /o V T0-202AA C— lt~\1 II /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200