irf520 mosfet
Abstract: IRF520 circuit diagram irf520 irf520 switch transistor equivalent irf520 MOSFET IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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IRF520
O-220
irf520 mosfet
IRF520
circuit diagram irf520
irf520 switch
transistor equivalent irf520
MOSFET IRF520
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PDF
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irf520 mosfet
Abstract: irf520 switch IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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IRF520
O-220
irf520 mosfet
irf520 switch
IRF520
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PDF
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IRF520 mosfet
Abstract: IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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Original
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O-220
IRF520
O-220
IRF520 mosfet
IRF520
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PDF
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IRF520
Abstract: transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
Text: IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.27 Ω < 0.27 Ω 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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Original
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IRF520
IRF520FI
100oC
175oC
O-220
ISOWATT220
IRF520
transistor IRF520
circuit diagram irf520
IRF520 application note
IRF520FI
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PDF
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Power MOSFETs Application Notes irf520
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Power MOSFETs Application Notes irf520
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PDF
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irf520 mosfet
Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
O-220
O-220
18-Jul-08
irf520 mosfet
IRF520
Power MOSFETs Application Notes irf520
SiHF520-E3
1IRF520
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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PDF
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IRF520 application note
Abstract: IRF520 IRF520P 910170
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF520 application note
IRF520
IRF520P
910170
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
O-220
O-220
12-Mar-07
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PDF
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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OCR Scan
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRF520
O-220AB
TB334
TA09594.
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PDF
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IRF540
Abstract: T0-220
Text: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722
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OCR Scan
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IRF452
IRF453
IRF460
IRF520
IRF521
IRF522
IRF523
IRF530
IRF531
IRF532
IRF540
T0-220
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PDF
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1RF520
Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
Text: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2
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OCR Scan
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IRF520
T0-220
1RF520
AVW smd
smd ht1
AN-994
IRF520S
SMD-220
ScansUX1012
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PDF
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IRF50
Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Text: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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OCR Scan
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IRF520
IRF521
IRF522
IRF523
IRF620
IRF523
O-220
IRF50
pin configuration IRF521
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PDF
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM
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OCR Scan
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71TMHD
IRF520
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PDF
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International Rectifier IRF520
Abstract: No abstract text available
Text: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling
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OCR Scan
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IRF520
O-220
S54S2
International Rectifier IRF520
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 SGS-THOMSON */ =7 # M MI[Li ïrGMO(gS IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox
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OCR Scan
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IRF520
28x30
16x18
MC-0071
250/jA
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PDF
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transistor IRF520
Abstract: IRF520 mos die 312c IRF52
Text: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:
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OCR Scan
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0D30130
IRF520
95x95
28x30
16x18
651CHARACTERISTICS
transistor IRF520
mos die
312c
IRF52
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PDF
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IRF520 application note
Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
Text: HE D I Data Sheet No. PD-9.313J 40 55 4 5 5 □□00 44 2 2 | T-39-11 INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER I I O R I REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF52Q IRFS21
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OCR Scan
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T-39-11
IRF52Q
IRFS21
IRFS23
T0-220AB
C-197
IRF520,
IRF521,
IRF522,
IRF523
IRF520 application note
Irf520 spice
irf522
AN975
A44B
irf521
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PDF
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1RF122
Abstract: IRFS20 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 0-30Q IRF641
Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jo p e ie s Device aaM O dSO W T0-220AB /o V T0-202AA C— lt~\1 II /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150
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OCR Scan
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
1RF122
IRFS20
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
0-30Q
IRF641
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PDF
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VN0108N2
Abstract: irf120 IRF232 IRF240 IRF422 IRF522 IRF540 IRF632 IRF640 IRF822
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jo p e ie s Device aaM O dSO W T0-220AB /o V T0-202AA C— lt~\1 II /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200
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OCR Scan
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN0108N2
irf120
IRF232
IRF240
IRF422
IRF822
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PDF
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