SIHF520 Search Results

SIHF520 Price and Stock

Filter by Manufacturer


Vishay Siliconix SIHF520STRR-GE3 MOSFET N-CH 100V 9.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF520STRR-GE3	Reel			800	1 - 10 - 100 - 1000 $0.4624 10000 $0.35549	Buy Now
Vishay Siliconix SIHF520STRL-GE3 MOSFET N-CH 100V 9.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF520STRL-GE3	Reel			800	1 - 10 - 100 - 1000 $0.4624 10000 $0.35549	Buy Now
Vishay Intertechnologies SIHF520STRR-GE3 N-CHANNEL 100V - Tape and Reel (Alt: SIHF520STRR-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF520STRR-GE3	Reel		13 Weeks	800	1 - 10 - 100 - 1000 $0.37534 10000 $0.33071	Buy Now
Mouser Electronics	SIHF520STRR-GE3					1 $0.94 10 $0.766 100 $0.597 1000 $0.39 10000 $0.351	Get Quote
TTI	SIHF520STRR-GE3	Reel			800	1 - 10 - 100 - 1000 $0.373 10000 $0.351	Buy Now
Vishay Intertechnologies SIHF520STRL-GE3 N-CHANNEL 100V - Tape and Reel (Alt: SIHF520STRL-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF520STRL-GE3	Reel		13 Weeks	800	1 - 10 - 100 - 1000 $0.3724 10000 $0.33071	Buy Now
Mouser Electronics	SIHF520STRL-GE3					1 $0.94 10 $0.766 100 $0.597 1000 $0.387 10000 $0.351	Get Quote
TTI	SIHF520STRL-GE3	Reel			800	1 - 10 - 100 - 1000 $0.374 10000 $0.351	Buy Now

SIHF520 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHF520STRL-GE3		Vishay Siliconix	MOSFET N-CH 100V 9.2A D2PAK		Original	PDF
SIHF520STRR-GE3		Vishay Siliconix	MOSFET N-CH 100V 9.2A D2PAK		Original	PDF

SIHF520 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Power MOSFETs Application Notes irf520 Abstract: No abstract text available Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Power MOSFETs Application Notes irf520
Untitled Abstract: No abstract text available Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	PDF	IRF520S, SiHF520S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
irf520 mosfet Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520 Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 O-220 O-220 18-Jul-08 irf520 mosfet IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
IRF520 application note Abstract: IRF520 IRF520P 910170 Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF520 application note IRF520 IRF520P 910170
Untitled Abstract: No abstract text available Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	PDF	IRF520S, SiHF520S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
AN609 Abstract: IRF520 SiHF520 Text: IRF520_RC, SiHF520_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRF520 SiHF520 AN609, 25-Feb-10 AN609
Untitled Abstract: No abstract text available Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 O-220 O-220 12-Mar-07
Untitled Abstract: No abstract text available Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	PDF	IRF520S, SiHF520S 2002/95/EC O-263) 11-Mar-11
IRF520S Abstract: SiHF520S SiHF520S-E3 Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the	Original	PDF	IRF520S, SiHF520S O-263) 18-Jul-08 IRF520S SiHF520S-E3
Untitled Abstract: No abstract text available Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	PDF	IRF520S, SiHF520S SMD-220 18-Jul-08
Untitled Abstract: No abstract text available Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	PDF	IRF520S, SiHF520S 2002/95/EC O-263) 11-Mar-11

smd diode marking 77 Abstract: No abstract text available Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	PDF	IRF520S, SiHF520S SMD-220 12-Mar-07 smd diode marking 77
AN609 Abstract: IRF520S SiHF520S Text: IRF520S_RC, SiHF520S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRF520S SiHF520S AN609, 25-Feb-10 AN609
Untitled Abstract: No abstract text available Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 11-Mar-11