REFLECTIVE OBJECT SENSOR
Abstract: ir sensor for object detection using led ir sensor 0038 OBJECT SENSOR OPB609 OPB609AX OPB609GU OPB609RA OP508 LED 020 ir sensor
Text: Reflective Object Sensor OPB609 Series Features: • • • • OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
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OPB609
OP609
REFLECTIVE OBJECT SENSOR
ir sensor for object detection using led
ir sensor 0038
OBJECT SENSOR
OPB609AX
OPB609GU
OPB609RA
OP508
LED 020 ir sensor
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ir sensor for object detection using led
Abstract: vibra tite OPB609AX REFLECTIVE OBJECT SENSOR OPB609 OPB609GU OPB609RA reflective sensor 4 pin
Text: Reflective Object Sensor OPB609 Series Features: • • • • RA OPB609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
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OPB609
ir sensor for object detection using led
vibra tite
OPB609AX
REFLECTIVE OBJECT SENSOR
OPB609GU
OPB609RA
reflective sensor 4 pin
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ir sensor 0038
Abstract: LED 020 ir sensor OBJECT SENSOR ir sensor for object detection using led REFLECTIVE OBJECT SENSOR reflective sensor 4 pin OPB609GU
Text: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
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OPB609
OP609
ir sensor 0038
LED 020 ir sensor
OBJECT SENSOR
ir sensor for object detection using led
REFLECTIVE OBJECT SENSOR
reflective sensor 4 pin
OPB609GU
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ir sensor 0038
Abstract: No abstract text available
Text: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
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OPB609
OP609
ir sensor 0038
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TB-94
Abstract: No abstract text available
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm
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TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
11-Mar-11
TB-94
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FVOV6870
Abstract: MIL-HDBK-263 VISHAY Optoelectronics
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
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TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
18-Jul-08
FVOV6870
MIL-HDBK-263
VISHAY Optoelectronics
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Untitled
Abstract: No abstract text available
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm
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TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm
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TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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VISHAY Optoelectronics
Abstract: FVOV6870 MIL-HDBK-263
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
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TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
18-Jul-08
VISHAY Optoelectronics
FVOV6870
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
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TB9414VA
TB9414VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
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TB9414VA
TB9414VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TS9414VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 940 nm
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TS9414VA
TS9414VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TS9410VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.250 x 0.250 x 0.17 • Peak wavelength: = 940 nm
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TS9410VA
TS9410VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm
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TB9408VA
TB9408VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm
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TB9408VA
TB9408VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ir diode 940 nm
Abstract: LED55B LED56 LED55C LED56F 1N6264 1N6265 CQX14 CQX15 CQX16
Text: Optoelectronics Hermetic Light Emitting Diodes Part Number PO @ 100 mA IF mW min max VF @ 100 mA IF (V) max IR @ 3 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp TO-46 Diode Package (Convex Lens) 1N6264 6.00 – 1.7 10 16 940
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1N6264
CQX14
CQX16
LED55B
LED55C
LED56
1N6265
CQX15
ir diode 940 nm
LED55B
LED56
LED55C
LED56F
1N6264
1N6265
CQX14
CQX15
CQX16
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QED234
Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Text: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED634
QED121
QED234
ir diode 940 nm
sidelooker DIODE
power diode package
QEC121
QED233
QEC112
QEC113
QEC122
QEC123
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VSML3710
Abstract: VSML3710-GS08
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75
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VSML3710
VEMT3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
VSML3710
VSML3710-GS08
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VSML3710
Abstract: VSML3710-GS08 MA50NM
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
J-STD-020
VSML3710
18-Jul-08
VSML3710-GS08
MA50NM
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J-STD-020D
Abstract: VSML3710 VSML3710-GS08
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
J-STD-020
VSML3710
18-Jul-08
J-STD-020D
VSML3710-GS08
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TSAL6100 application
Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL6100
2002/95/EC
2002/96/EC
TSAL6100
18-Jul-08
TSAL6100 application
GaAs 1000 nm Infrared Diode,
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TSAL6100
Abstract: high power infrared led
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL6100
2002/95/EC
2002/96/EC
TSAL6100
18-Jul-08
high power infrared led
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Untitled
Abstract: No abstract text available
Text: Sensors Infrared light emitting diode, cast type SIR-320ST3F The S IR -3 2 0 S T 3 F is a G a A s infrared light emitting d iode h o u se d in clear plastic. T h is device h a s a high lum inous efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sam e time h a s a wide radiation
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OCR Scan
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SIR-320ST3F
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B85 diode
Abstract: No abstract text available
Text: Sensors Infrared light emitting diode, cast type SIR-320ST3F The S IR -3 2 0 S T 3 F is a G a A s infrared light emitting d iode h o u se d in clear plastic. This device h a s a high lu m in ou s efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sa m e time ha s a wide radiation
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OCR Scan
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PDF
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SIR-320ST3F
SIR-320ST3F
B85 diode
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