CX158
Abstract: pressure sensor 7106 gps to microcontroller ms 7109 10MHz-other
Text: CALIBRATED DUAL CRYSTAL OSCILLATORS CDXO QEC112-AH TIME &FREQUENCY CALIBRATED DUAL CRYSTAL OSCILLATORS CDXO Description QEC 112 Y R A N I M I L E R P This oscillator is a compromise between the performance of an OCXO and those of a MCXO over wide temperature ranges. The main
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QEC112-AH
CX158
pressure sensor 7106
gps to microcontroller
ms 7109
10MHz-other
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a
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OCR Scan
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QEC112/113
QEC11X
QSC11X
000L270
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Untitled
Abstract: No abstract text available
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor
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QEC112,
QEC113
940nm
QEC11X
940nm
QEC113
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES T-1 3 mm Part Number 76 NOM jr~r le Angle @ 1/2 Power Radiant Intensity min max units V F/IF (V)l(mA) max I r/V r (ViA)/(V) max Notes 940 nm GaAs \ .052(1 32) .032 (.082) Emission JT | QEC112 ±8° 6
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
53IODES
100mA
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L14F1 phototransistor datasheet
Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED634
QED121
L14F1 phototransistor datasheet
L14F1 PHOTOTRANSISTOR
phototransistor 3 pin L14F1
Phototransistor L14F1
l14f1 ir phototransistor
T1 L14F1
Phototransistor L14G3
L14F1 PHOTOTRANSISTOR PIN
opto transistor moc 12v
LED 55 with L14F1 phototransistor
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QED234
Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Text: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED634
QED121
QED234
ir diode 940 nm
sidelooker DIODE
power diode package
QEC121
QED233
QEC112
QEC113
QEC122
QEC123
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ST2130
Abstract: QSC113 QEC11X QSC112 diode 465 nm 5 mm tinted
Text: fey GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) R EFER EN C E SU RFACE Th e QEC11X is a 94 0 nm GaAs LED encapsulated in a clear, peach tinted, plastic T-1 package. r .203 (5.16) .183 (4.65)
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QEC112/113
ST2130
QEC11X
QSC11X
mA167'
QSC113
mW/10Â
mA1671
ST2130
QSC112
diode 465 nm 5 mm tinted
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QEC112
Abstract: QEC113 QEC11X QSCXXX
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. λ = 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 3 mm
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QEC112,
QEC113
QEC11X
QEC113
QEC112
QSCXXX
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Untitled
Abstract: No abstract text available
Text: E Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3 20 .106 (2.69) R EFER EN C E SU RFACE r .203 (5.16) 183(4.65) .030 (0.76) NOM J .0 4 2 (1 .0 7 ) ± 010 (± 25) I .8 0 0 (2 0 .3 ) MIN * 1 The QEC11X is a 940 nm GaAs LED encapsulated in a
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QEC112/113
QEC11X
QSC11X
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QEC11X
Abstract: QEC112 QEC113 QSC112
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 QEC113 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46) SQ. (2X)
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QEC112
QEC113
QEC11X
QSC112
DS300334
QEC112
QEC113
QSC112
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ST2130
Abstract: No abstract text available
Text: [*ö GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS 126 3.20 REFERENCE SURFACE 203 (5.16) 183(4.65) CATHODE J .042(1.07) ±.010 (±.25) .050 (1.27) REF t .800 (20.3) MIN >/ * * -ANODE J .018(0.46) SQ ±.003 (±0.08)'
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QEC112/113
QEC11X
QSC11X
ST2130
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QSCXXX
Abstract: GaAs 850 nm Infrared Emitting Diode QEC112 QEC113 QEC11X QEC113.0059
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor
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QEC112,
QEC113
940nm
QEC11X
940nm
QEC113
QSCXXX
GaAs 850 nm Infrared Emitting Diode
QEC112
QEC113.0059
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QRB1134
Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6
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1N6264
1N6265
BPW36
BPW37
BPW38
CNY28
CNY29
CNY36
CQX14
CQX15
QRB1134
H22A2
QRB1113
QRB1114
QRD1114
LED55C
QSE113
QSC112
QSE157
QSE158
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Untitled
Abstract: No abstract text available
Text: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)
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QEC112
QEC113
QEC121
QEC122
QEC123
T-13/4
QED233
QED234
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MAN6760 function
Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Text: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available
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MAN6730
MAN6760
MAN6880
MAN6940
MAN6975
MAN6R10
MAN73A
MAN8010
MAN8240
MAN8610
MAN6760 function
KAR00042
KAR00044
KOI00003
KAT00022A
kva00272
KAT00049
Fairchild kar00042
KAR00044A
KDT00026
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L14F1 phototransistor datasheet
Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Text: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions
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SE-171
L14F1 phototransistor datasheet
l14f1 ir phototransistor
PIN CONFIGURATION OF L14F1
L14F1 PHOTOTRANSISTOR
Phototransistor L14F1
MEXICO TRANSMISSIVE SENSOR
l14f1 phototransistor data
opto transistor moc
CQX 89
Phototransistor L14G3
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Optocoupler H22A1
Abstract: how to interface optocoupler with triac a 2631 optocoupler QRE1113 QRD1114 2631 optocoupler Optocoupler with triac rain SENSOR MOC3023 H22A1
Text: OPTOELECTRONICS A P P L I C AT I O N S BROCHURE IR Components Optocouplers LED Displays LED Lamps 2001 Multi-Market Products for a Changing World TM OPTOELECTRONICS APPLICATIONS BROCHURE TABLE OF CONTENTS Description Page VCR, Camcorder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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D-82256
Optocoupler H22A1
how to interface optocoupler with triac
a 2631 optocoupler
QRE1113
QRD1114
2631 optocoupler
Optocoupler with triac
rain SENSOR
MOC3023
H22A1
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QED223
Abstract: diode Sr 203
Text: Plastic Light Emitting Diodes T-1 3 mm Diode Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF (V) max IR @ 5 V VR (µA)
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED223
diode Sr 203
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Untitled
Abstract: No abstract text available
Text: GEO OPTOELECTRONICS PLASTIC INFRARED LIGHT EM ITTIN G DIODES E m is sio n T-1 3 mm A n g le @ Part Num ber •e R a d ia n t In te n s ity 1/2 P o w e r V F/ I F ■r ' V r V /(m A | ( mA )/ i v i m in max u n its m ax max 30 mW/sr 1.50/20 10/5 1 — mW/sr
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QEC112
QEC113
QEC121
QEC122
QEC123
T-13/4
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MAN-8610
Abstract: CNW82 HLMPD150A CNY17GF-1
Text: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA
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OCR Scan
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
740L6000
740L6001
740L6011
MAN-8610
CNW82
HLMPD150A
CNY17GF-1
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ORB1134
Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Text: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
6N139
740L6000
740L6001
ORB1134
H11F1 300
CNY17GF-2
cnw85
CQX17
L14LOB
OPB704
MAN4710
1LP6
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