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    TSAL6100 Price and Stock

    Vishay Semiconductors TSAL6100UL

    IR EMITTER HIPOWER 950NM 5MM 10D
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    DigiKey TSAL6100UL Bulk 1,655 1
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    Vishay Intertechnologies TSAL6100

    Infrared Emitter, 940 nm, T-1 3/4 (5mm), 130 mW/Sr, 800 ns, 800 ns - Bulk (Alt: TSAL6100)
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    Avnet Americas () TSAL6100 Bulk 8,483 12 Weeks 4,000
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    TSAL6100 Bulk 111 Weeks 5
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    TSAL6100 Bulk 14 Weeks, 1 Days 1
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    Mouser Electronics TSAL6100 26,002
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    Verical () TSAL6100 123,973 110
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    TSAL6100 674 53
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    Arrow Electronics () TSAL6100 123,973 12 Weeks 1
    • 1 $0.3056
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    TSAL6100 674 12 Weeks 1
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    TSAL6100 43 12 Weeks 1
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    Newark () TSAL6100 Bulk 71,515 1
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    TSAL6100 Bulk 4,000
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    Future Electronics TSAL6100 Bag 4,748 12 Weeks 1
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    TTI TSAL6100 Bulk 42,950 50
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    TME TSAL6100 2,637 1
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    ComSIT USA TSAL6100 1,094
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    Rutronik TSAL6100 Bulk 4,000 4,000
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    Chip 1 Exchange TSAL6100 67,757
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    Avnet Asia TSAL6100 14 Weeks 4,000
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    EBV Elektronik TSAL6100 13 Weeks 4,000
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    New Advantage Corporation TSAL6100 106,000 1
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    Vishay Intertechnologies TSAL6100UL

    IR EMITTER HIPOWER 950NM 5MM 10DEG UL-e3 - Bulk (Alt: TSAL6100UL)
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    Avnet Americas TSAL6100UL Bulk 12 Weeks 4,000
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    Mouser Electronics TSAL6100UL 6,812
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    TTI TSAL6100UL Bulk 4,000
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    EBV Elektronik TSAL6100UL 13 Weeks 4,000
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    Vyrian TSAL6100UL 2,608
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    Vishay Intertechnologies TSAL6100-AS12Z

    Infrared Emitters IR EMITTER HIGH POWR 950NM 5MM 10DEG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TSAL6100-AS12Z 4,885
    • 1 $0.59
    • 10 $0.359
    • 100 $0.232
    • 1000 $0.177
    • 10000 $0.142
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    TME TSAL6100-AS12Z 1,332 2
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    • 100 $0.132
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    EBV Elektronik TSAL6100-AS12Z 4,000 13 Weeks 1,000
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    New Advantage Corporation TSAL6100-AS12Z 3,000 1
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    • 1000 $0.3516
    • 10000 $0.3254
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    Vishay Intertechnologies TSAL6100.

    Ir Emitter High Powr 950Nm 5Mm 10Deg-E3 Rohs Compliant: No |Vishay TSAL6100.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TSAL6100. Bulk 4,000
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    TSAL6100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSAL6100
    Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF

    TSAL6100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSAL6100 application

    Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
    Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original
    TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode, PDF

    TSAL6100

    Abstract: TSAL6100 application
    Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 08-Apr-05 TSAL6100 application PDF

    Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power


    Original
    TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    TSAL6100

    Abstract: high power infrared led
    Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original
    TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led PDF

    Contextual Info: Tem ic TSAL6100 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 5 mm 'T-13A Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­


    OCR Scan
    TSAL6100 TSAL6100 D-74025 18-Aug-98 PDF

    TSAL6100

    Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original
    TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11 PDF

    Contextual Info: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original
    TSAL6100X01 TSAL6100X01 2002/95/EC 11-Mar-11 PDF

    TSAL6100

    Abstract: infrared emitters and detectors TSAL6100 application
    Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 08-Apr-05 infrared emitters and detectors TSAL6100 application PDF

    Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original
    TSAL6100 TSAL6100 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power


    Original
    TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 PDF

    TSAL6100

    Abstract: fire detector Diode Optical Smoke DEtector S8867 TSAL6100X01
    Contextual Info: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire


    Original
    TSAL6100X01 TSAL6100X01 S8867, D-74025 18-Jul-05 TSAL6100 fire detector Diode Optical Smoke DEtector S8867 PDF

    TSAL6100

    Contextual Info: TSAL6100 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original
    TSAL6100 TSAL6100 D-74025 20-May-99 PDF

    TSAL6100 application

    Abstract: TSAL6100
    Contextual Info: TSAL6100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 D-74025 07-Apr-04 TSAL6100 application PDF

    Contextual Info: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire


    Original
    TSAL6100X01 TSAL6100X01 S8867, 18-Jul-08 PDF

    TSAL6100

    Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original
    TSAL6100 TSAL6100 D-74025 20-May-99 PDF

    Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original
    TSAL6100 TSAL6100 D-74025 20-May-99 PDF

    TSAL6100

    Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original
    TSAL6100 TSAL6100 D-74025 20-May-99 PDF

    TSAL6100

    Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 18-Jul-08 PDF

    TSAL6100 application

    Contextual Info: TSAL6100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 D-74025 04-May-04 TSAL6100 application PDF

    TSAL6100

    Abstract: TSAL61
    Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 D-74025 05-Mar-05 TSAL61 PDF

    Contextual Info: TSAL6100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 D-74025 04-May-04 PDF

    Contextual Info: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original
    TSAL6100X01 TSAL6100X01 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    TSAL6100

    Contextual Info: TSAL6100 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original
    TSAL6100 TSAL6100 D-74025 20-May-99 PDF

    Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power


    Original
    TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11 PDF