TSAL6100 Search Results
TSAL6100 Price and Stock
Vishay Semiconductors TSAL6100ULIR EMITTER HIPOWER 950NM 5MM 10D |
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TSAL6100UL | Bulk | 1,655 | 1 |
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Vishay Intertechnologies TSAL6100Infrared Emitter, 940 nm, T-1 3/4 (5mm), 130 mW/Sr, 800 ns, 800 ns - Bulk (Alt: TSAL6100) |
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TSAL6100 | Bulk | 8,483 | 12 Weeks | 4,000 |
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TSAL6100 | 26,002 |
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TSAL6100 | 123,973 | 110 |
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TSAL6100 | 123,973 | 12 Weeks | 1 |
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TSAL6100 | Bulk | 71,515 | 1 |
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TSAL6100 | Bag | 4,748 | 12 Weeks | 1 |
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TSAL6100 | Bulk | 42,950 | 50 |
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TSAL6100 | 2,637 | 1 |
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TSAL6100 | 1,094 |
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TSAL6100 | Bulk | 4,000 | 4,000 |
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TSAL6100 | 67,757 |
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TSAL6100 | 14 Weeks | 4,000 |
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TSAL6100 | 13 Weeks | 4,000 |
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TSAL6100 | 106,000 | 1 |
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Vishay Intertechnologies TSAL6100ULIR EMITTER HIPOWER 950NM 5MM 10DEG UL-e3 - Bulk (Alt: TSAL6100UL) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6100UL | Bulk | 12 Weeks | 4,000 |
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TSAL6100UL | 6,812 |
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TSAL6100UL | Bulk | 4,000 |
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TSAL6100UL | 13 Weeks | 4,000 |
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TSAL6100UL | 2,608 |
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Vishay Intertechnologies TSAL6100-AS12ZInfrared Emitters IR EMITTER HIGH POWR 950NM 5MM 10DEG |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6100-AS12Z | 4,885 |
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TSAL6100-AS12Z | 1,332 | 2 |
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TSAL6100-AS12Z | 4,000 | 13 Weeks | 1,000 |
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TSAL6100-AS12Z | 3,000 | 1 |
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Vishay Intertechnologies TSAL6100.Ir Emitter High Powr 950Nm 5Mm 10Deg-E3 Rohs Compliant: No |Vishay TSAL6100. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6100. | Bulk | 4,000 |
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TSAL6100 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TSAL6100 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original |
TSAL6100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSAL6100 application
Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode, | |
TSAL6100
Abstract: TSAL6100 application
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TSAL6100 TSAL6100 08-Apr-05 TSAL6100 application | |
Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
Original |
TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSAL6100
Abstract: high power infrared led
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Original |
TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led | |
Contextual Info: Tem ic TSAL6100 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 5 mm 'T-13A Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
TSAL6100 TSAL6100 D-74025 18-Aug-98 | |
TSAL6100Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11 | |
Contextual Info: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
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TSAL6100X01 TSAL6100X01 2002/95/EC 11-Mar-11 | |
TSAL6100
Abstract: infrared emitters and detectors TSAL6100 application
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TSAL6100 TSAL6100 08-Apr-05 infrared emitters and detectors TSAL6100 application | |
Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL6100 TSAL6100 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
Original |
TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
TSAL6100
Abstract: fire detector Diode Optical Smoke DEtector S8867 TSAL6100X01
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TSAL6100X01 TSAL6100X01 S8867, D-74025 18-Jul-05 TSAL6100 fire detector Diode Optical Smoke DEtector S8867 | |
TSAL6100Contextual Info: TSAL6100 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6100 TSAL6100 D-74025 20-May-99 | |
TSAL6100 application
Abstract: TSAL6100
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Original |
TSAL6100 TSAL6100 D-74025 07-Apr-04 TSAL6100 application | |
Contextual Info: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire |
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TSAL6100X01 TSAL6100X01 S8867, 18-Jul-08 | |
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TSAL6100Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6100 TSAL6100 D-74025 20-May-99 | |
Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6100 TSAL6100 D-74025 20-May-99 | |
TSAL6100Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6100 TSAL6100 D-74025 20-May-99 | |
TSAL6100Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6100 TSAL6100 18-Jul-08 | |
TSAL6100 applicationContextual Info: TSAL6100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6100 TSAL6100 D-74025 04-May-04 TSAL6100 application | |
TSAL6100
Abstract: TSAL61
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TSAL6100 TSAL6100 D-74025 05-Mar-05 TSAL61 | |
Contextual Info: TSAL6100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6100 TSAL6100 D-74025 04-May-04 | |
Contextual Info: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL6100X01 TSAL6100X01 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSAL6100Contextual Info: TSAL6100 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6100 TSAL6100 D-74025 20-May-99 | |
Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
Original |
TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11 |