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Vishay Intertechnologies TB9408VA-SF-F Ir Emitter Wafer High Efficiency 940Nm Diode Chip \|Vishay TB9408VA-SF-F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	TB9408VA-SF-F	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm	Original	PDF	TB9408VA TB9408VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm	Original	PDF	TB9408VA TB9408VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm	Original	PDF	TB9408VA TB9408VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare	Original	PDF	VMN-SG2200-1502