D468
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • MflSSMSB 0017SDE 765 ■ INR PD-2.282 International H Rectifier 440CNQ030 SCHOTTKY RECTIFIER 440 Amp Major Ratings and Characteristics Characteristics !F AV Rectangular waveform V RRM Descri ption/Featu res 440CNQ030 Units
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0017SDE
440CNQ030
440CNQ030
D-467
435545Z
D-468
D468
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Untitled
Abstract: No abstract text available
Text: LSE D INTERNATIONAL RECTIFIER • 4355452 0017220 2 4 e! H I N R PD-2.308 4 o c p q o 5o International [k ^ J Rectifier 4 o c pq o 6 o SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Description/Features The 40CPQ. center tap Schottky rectifier has been opti
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40CPQ.
40CPQ060
IRFP460
40HFL40S02
D-194
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Untitled
Abstract: No abstract text available
Text: S^E D HÖSSHS2 ODlEbBfi 2bS • INR I PD-2.327 INTERNATIONAL RECTIFIER International [^Rectifier SD51 SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features TheSD51 Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The propri
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TheSD51
0012b41
D-280
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Untitled
Abstract: No abstract text available
Text: 5TE D • 4Ô55452 GÜ12SSÔ *435 ■ INR PD-2.321 INTERNATIONAL RECTIFIER MBR2080CT m b r2 0 9 0 ct m b r2 o io o c t International S Rectifier SCHOTTKY RECTIFIER 20 Amp Description/Features Major Ratings and Characteristics Characteristics MBR20.CT Units
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MBR2080CT
MBR20.
300ms,
O-220AB
16CTQ
D-168
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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2N6764 JANTX
Abstract: 2n6764 9337d 2N6763
Text: H E D | 4355452 INTERNATIONAL Q0Q131Ö b | T - i f ' / -3 Data Sheet No. PD-9.337D RECTIFIER INTERNATIONAL RECTIFIER HEXFETTRANSISTORS I O R *JANTXV2N67B4 *JANTX2N6764 JEDEC REGISTERED IM-CHANNEL POWER MOSFETs SN6764 SN6763 ‘ QUALIFIED TO MIL-S-19500/543
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Q0Q131Ö
MIL-S-19500/543
JANTXV2N67B4
JANTX2N6764
SN6764
SN6763
MS55MS2
T-39-13
2N6764
2N6763
2N6764 JANTX
9337d
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Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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T-63-65"
TRIAC210-.
TRIAC350-.
FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
Triac 12F
irkt 40
thyristor silicon WAFER chips
31017
triac 1200V
21PT
36MB-A
40HF
70HF
85HF
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jedec package TO-243AA
Abstract: G0177
Text: INTERNATIONAL RECTIFIER bSE ]> 4655452 OOlTb'H 122 * I N R Data Sheet No. PD-2.176 INTERNATIONAL RECTIFIER X O R 10J SERIES 1 Amp Surface Mount Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics 10J 'F A V 1.0 A @ Max. T ^ 31
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGAC30U
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RF530
Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Text: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS
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T-39-11
IRF530
IRF531
IRF532
IRF533Î
O-220AB
IRF530,
IRF531,
IRF532,
IRF533
RF530
1RF530
IRF530 HEXFET TRANSISTORS
IR IRF532
1RF531
TYN 058
LIRF530
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IRFD9110
Abstract: No abstract text available
Text: International jreg Rectifier I 4Ô55455 0015G56 33T * I N R _ IRFD9110 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • PD'9389G Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable fc.SE D V qss - "100V
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0015G56
9389G
IRFD9110
IRFD9110
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1RF540
Abstract: RF540 mosFET 1RF540 IRF540 application note Application Note of IRF540 IRF540 International Rectifier irf540 mosfet control motor irf541 IRF540 application irf540 spice
Text: HE D I 4Ö55452 0000450 b | Data Sheet No. PD-9.373G INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRFS4Q IRFS41 IRF542 IRFS43 HEXFEF TRANSISTORS N-CHANNEL
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O-220AB
C-213
RF540,
IRF541,
IRF542,
IRF543
T-39-13
1RF540
RF540
mosFET 1RF540
IRF540 application note
Application Note of IRF540
IRF540 International Rectifier
irf540 mosfet control motor
irf541
IRF540 application
irf540 spice
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1RF620S
Abstract: No abstract text available
Text: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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IRF620S
4A554S2
SMD-220
4ASS452
1RF620S
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FD9515
Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
Text: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International
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T-35-25
IRFR020,
IRFR022,
IRFU020,
IRFU022
FD9515
k 3525 MOSFET
1RFU020
fu022
irfu020
FU020
IRFR022
lg 87a
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F9530
Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s
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T0-220AB
C-341
43S54S2
IRF9530,
IRF9531,
IRF9532,
IRF9533
T-39-21
C-342
F9530
diode C339
IRF9530
C337 W 63
complementary of irf9530
C337 W
IRF9530 complementary
diode c341
IRF9532
IR 9530
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1RF720
Abstract: 147L2 MSSS2 9315J
Text: International ioR Rectifier 4ÔSS452 a n • INR PD-9.315J IRF720 HEXFET Power M O SFET • • • • • 0014750 INTERNATIONAL RECTIFIER bSE Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D
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SS452
IRF720
ai47b3
1RF720
147L2
MSSS2
9315J
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d872
Abstract: d0147
Text: International i“R Rectifier HEXFET Power MOSFET • • • • • 4055455 001474b QT7 • INR PD.9 527B IRF644 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSED V DSS = 250V
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001474b
IRF644
O-220
D014751
d872
d0147
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diode B14A
Abstract: IRFIP450 B14A diode B14A B14A marking irf-ip450 9645a
Text: 4flSS4S5 0015355 bbM • International K?R Rectifier INR PD-9.645A IRFIP450 INTERNATIONAL RECTIFIER b5E D HEXFET Power MOSFET Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm
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IRFIP450
O-247
t50KO
diode B14A
B14A diode
B14A
B14A marking
irf-ip450
9645a
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.676A INTERNATIONAL RECTIFIER I @ R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7130 IRHB130 MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRH7130
IRHB130
1x10s
IRH7130,
IRH8130
S5452
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c624 DIODE
Abstract: c619 DIODE diode c624 c617 DIODE c619 IRFPG42 c618 diode IRFPG40 C620 diode irfpg
Text: HE 0 I MflSSMSE QODâûbô 3 | INTERNATIONAL Data Sheet No. PD-9.576A RECTIFIER INTERNATIONAL RECTIFIER I Ö R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG40 IRFPG42 N-CHANNEL 1000 Volt, 3.5 Ohm HEXFET TO-247AC TO-3P Plastic Package Product Summary
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IRFPG40
IRFPG42
O-247AC
IRFPG40,
IRFPG42
T-39-13
C-624
c624 DIODE
c619 DIODE
diode c624
c617 DIODE
c619
c618 diode
C620 diode
irfpg
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S1B02
Abstract: lts 542 2N6761
Text: H E D I MflS5M52 INTERNATIONAL 000^314 T | Data Sheet No. PD-9.336D RECTIFIER T - 3 7 - / f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IQR *JANTXV2NB762 *JAI\ITX2NB762 JEDEC REGISTERED IU-CHAIUIMEL G POWER MOSFETs 2N 6762 2N67G1 ‘ QUALIFIED TO MIL-S-19500/542
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MflS5M52
MIL-S-19500/542
JANTXV2NB762
JAI\ITX2NB762
2N67G1
para-11
G-294
S1B02
lts 542
2N6761
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F9232
Abstract: IRF9233 Irf9230
Text: HE D I 4ÖSSM52 GOO^Et. 1 | Data Sheet No. PD-9.349D INTERNATIONAL R E C T I F I E R 1 -3 ? ^ f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFS230 IRF9S3Ì P-CHANIMEL 2 0 0 VOLT IRF9S3S POWER MOSFETs IRF9S33 -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET technology is the key to International Rectifier’s
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SSM52
IRFS230
IRF9S33
G-208
F9232
IRF9233
Irf9230
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irf730
Abstract: diode zd 22
Text: 4 5 5 5 45 2 □□1 4 ?b 4 012 • International H g Rectifier INR PD-9.308K IRF730 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements b5E J> V DSS = 400V
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IRF730
irf730
diode zd 22
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