4A554S2 Search Results

HB-S Rectifier

Abstract: KA2 v0 diode b3l 15a negetive diode
Contextual Info: I N T E R N A TI ON AL RECTIFIER lIO R lin t e r n a t io n a l "t Ì Dlf 4A554S2 □□□?□□? i T “ 3-5 “ /? Data Sheet No. PD-3.155 r e c t if ie r S23AF & S23AFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 fjs 430 AMP RMS, RING AMPLIFYING GATE

Contextual Info: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents

international rectifier p

Abstract: n5204
Contextual Info: international rectifier î“ — i — - -— — 48 55452 SS - - - INTERNATIONAL ÏMf|4a554S2 00047=15 4 - R EC flFlER 55C 04795 D Data Sheet No. PD-3.081A

1RF620S

Contextual Info: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching

TIC33

Abstract: dt t3d 13 040B 75HQ 75HQ035 85HQ 85HQ030 85HQ035 DO-203AB 7666A
Contextual Info: INTERNATIONAL RECTIFIER 48 55452 liS INTERNATIONAL DE I 4A554S2 D0DS1S7 55C RECTIFIER 05127 Data Sheet No. PD-2.040B INTERNATIONAL RECTIFIER X O R 3 75HQ, 85HQ SERIES 7 5 and 8 5 Amp Schottky Power Rectifiers Major Ratings and Characteristics Rating Characteristic

ABE 027

Abstract: ely transformers IRFM460 IRFM460D IRFM460U N431 BBV 32 transistors
Contextual Info: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

Contextual Info: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-2.473 International [ìq r ì Rectifier HFA80NC40C Ultrafast, Soft Recovery Diode HEXFRED" BASE COMMON CATHODE Features V r = 400V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I 1' J V F = 1.3V _ Qrr*

IRF248N

Abstract: IRFIZ48N
Contextual Info: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description

Contextual Info: PD 9.1651 B International IQ R Rectifier F B 1 8 0 S A 10 HEXFET Power MOSFET • • • • • • • • Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance

Contextual Info: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve

Contextual Info: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary

Contextual Info: Bulletin 125162/B International 1»r]Rectifier ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features C en ter am plifying gate M e tal case with ceram ic insulator In ternational standard case T 0 -2 0 0 A B A -P U K Typical Applications

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

Contextual Info: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi­

Contextual Info: dar 48 IO R 3 D I MühiHhd UOUäUiM 02E 0 6 0 1 4 D -T ^ & 3 -¿ 1 3 Data Sheet No. PD-2.123 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER R34BF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 430 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES

Contextual Info: International lÉlRectifier PD-2.463 HFA60MC60C Ultrafast, Soft Recovery Diode HEXFRED Features V R = 600V ISOLATEDBASE • Reduced R F I and EM I V F = 1.5V • Reduced Snubbing • Extensive Characterization of Recovery Param eters Qrr * = 500nC , t

Contextual Info: Bulletin 12033/A International H Rectifier sd 4000c .r s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 4450A • W id e cu rren t range ■ High voltag e ratings up to 4 0 0 0 V ■ High surge cu rren t capab ilities ■ Diffused junction ■

Contextual Info: Data Sheet No. PD-9.676A INTERNATIONAL RECTIFIER I @ R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7130 IRHB130 MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

Contextual Info: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q

Contextual Info: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements

Contextual Info: PD-9.1089 International k ?r Rectifier IRL640 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling • Simple Drive Requirements

150L120A

Abstract: 150LA 45L100 2088a BS3934 cr 29c BS9300 45L15 150K-A 150L80A
Contextual Info: 73 DE|4fi5545H 0007350 3 | Data Sheet No. PD-2.088A 73C 07350 4855452 INTERNATIONAL RECTIFIER D T -a /-3-/ in t e r n a t io n a l r e c t if ie r 45L, 15QK-A, 1SOL-A, 150K5 SERIES 1 5 0 Amp Power Silicon Rectifier Diodes Description Major Ratings and Characteristics

thyristor dk

Contextual Info: Bulletin 125172/A International SRectifier ST303C.C s e rie s INVERTER GRADE THYRISTORS Puk Version Features • Metal case with ceramic insulator ■ International standard case TO-200AB E-PUK ■ All diffused design ■ Center amplifying gate ■ Guaranteed high dV/dt