4A5545E Search Results

R300 diodes

Abstract: international rectifier R300 10B0 R300 R30D HIN35 cf rh ir R300
Contextual Info: INTERNATIONAL RECTIFIER ^ 3C 0 7 2 G 4 d 'T - o / ^ II O R I i n t e r n a t i o n a l , r e c t i f i e r - •- Data Sheet n o . ku-z.i40 “ - - 73 D | 4A5545E 00u7dD4 3 ■ ■ R30D & R30DR SERIES 1000 - 400 VOLTS RANGE 450 AMP AVG STUD MOUNTED

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V

Contextual Info: International I1*”*!Rectifier PD 9.1103A IRF7204 preuminary HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

850 U01

Abstract: transistor 66a
Contextual Info: International g ü Rectifier IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT P D - 9.1138 Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

Contextual Info: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage

Contextual Info: | , ,• I P D -5041 International IS2R Rectifier CPV364M 4U preliminary IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes

Contextual Info: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements

Contextual Info: Provisional Data Sheet No. PD - 9.1224B international I@R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET

Contextual Info: Bulletin 12039 International [K?RjRectifier 70/30ûu R s e rie s STANDARD RECOVERY DIODES Stud Version 250A 300A Features • ■ Alloy diode Peak reverse voltage up to 1000V ■ Popular series for rough service ■ Standard JEDEC types ■ Stud cathode and stud anode version

IRFZ48

Abstract: irfz48 n mosfet
Contextual Info: 4ÔS54S2 Q D l S a m International k? r Rectifier 3b5 PD-9.758 IIN R IRFZ48 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching

AG QC TRANSISTOR

Abstract: 710a IRFMG40
Contextual Info: Data Sheet No. PD-9.710A IN TER N A TIO N A L RECTIFIER Ii o r I REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG40 N -C H A N N E L Product Summary 1000 Volt, 3.5 Ohm HEXFET The HEXFET® technology is the key to International Part Number

Contextual Info: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

Contextual Info: PD - 9.1266G International I R Rectifier IRF7503 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N-Channel M O SFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

Contextual Info: PD - 9.1502A International Rectifier I R IRL3705NS PRELIMINARY HEXFET Power MOSFET • • • • • Logic-Level Gate Drive Surface Mount Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

transistor c104 M 123

Abstract: c103 a ge
Contextual Info: PD - 9.794 bitem ational SqrIR ectifier IRGBC30FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

1RFP054

Abstract: 15-17-In MAX7064
Contextual Info: OOlSMMfl G14 • INR International ic?R Rectifier PD.9544A 1RFP054 INTERNATIONAL RECTIFIER HEXFET Power M O SFET Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: 4655452 OOlSTlb O n International H ji Rectifier m i HR PD-9.846 IR L IZ 1 4 G INTERNATIO N AL R E C T IF IE R HEXFET Power MOSFET bSE » • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive

transistor c295

Contextual Info: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

U9024N

Abstract: BSS 250 IRFR P-Channel MOSFET
Contextual Info: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2

Contextual Info: Data Sheet No. PD-1.030B IN T E R N A T IO N A L R E C T IF IE R SERIES PVA30 Microelectronic Power IC Relay Single Pole, 40 mA 0-300V AC/DC BOSFET Photovoltaic Relay BOSFET Power IC • 1010 Operations ■ 25n Sec Operating Time ■ Low Output Capacitance ■

Contextual Info: PD - 9.1259A International SÜIRectifier IRLML6302 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching

Contextual Info: International BgllRectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: International Im k I Rectifier I 46S S 4S B D D lSD M b HEXFET P ow er M O S FE T IN T E R N A T IO N A L b lfi « IN R PD-9.696A IRFD9014 bSE T> R E C T IF IE R • Dynamic dv/dt Rating • • • • • • Repetitive Avalanche Rated For Automatic Insertion