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    International Rectifier IRHM7360SESCS

    POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 400V, 0.21OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA (Also Known As: IRHM7360SE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRHM7360SESCS 11
    • 1 $802.4308
    • 10 $687.7979
    • 100 $687.7979
    • 1000 $687.7979
    • 10000 $687.7979
    Buy Now
    IRHM7360SESCS 11
    • 1 $802.4308
    • 10 $687.7979
    • 100 $687.7979
    • 1000 $687.7979
    • 10000 $687.7979
    Buy Now

    IRHM7360SE Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHM7360SE International Rectifier REPETITIVE AVALANCHE AND dv-dt RATED HEXFET TRANSISTOR Original PDF
    IRHM7360SE International Rectifier 400Volt, 0.20 Ohm, (SEE) RAD HARD HEXFET TRANSISTOR Original PDF
    IRHM7360SE International Rectifier 400 Volt, 0.20 Ohm, (SEE) RAD HARD HEXFET TRANSISTOR Original PDF
    IRHM7360SE International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHM7360SE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRHM7360SE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRHM7360SE

    Abstract: JANSR2N7391
    Text: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology


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    PDF IRHM7360SE JANSR2N7391 MIL-PRF-195000/TBD] IRHM7360SE JANSR2N7391

    IRHM7360SE

    Abstract: No abstract text available
    Text: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


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    PDF 91224C IRHM7360SE 400Volt, IRHM7360SE

    IRHm7360SE

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1224B IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD


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    PDF 1224B IRHM7360SE 400Volt, IRHm7360SE

    Untitled

    Abstract: No abstract text available
    Text: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard ™ HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number


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    PDF 91224D IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA) IRHM57163SED IRHM57163SEU MIL-PRF-19500

    TO-254

    Abstract: 91224D IRHM7360SE JANSR2N7391
    Text: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard ™ HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number


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    PDF 91224D IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA) IRHM57163SED IRHM57163SEU MIL-PRF-19500 TO-254 91224D IRHM7360SE JANSR2N7391

    Untitled

    Abstract: No abstract text available
    Text: PD-91224E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID QPL Part Number


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    PDF PD-91224E O-254AA) IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA applicatio54AA. MIL-PRF-19500

    IRHM7360SE

    Abstract: JANSR2N7391
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET


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    PDF IRHM7360SE JANSR2N7391 MIL-PRF-195000/TBD] IRHM7360SE JANSR2N7391

    Untitled

    Abstract: No abstract text available
    Text: IRHM7360SE Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)22# I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100# IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55õ


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    PDF IRHM7360SE

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/661D 17 April 2013 SUPERSEDING MIL-PRF-19500/661C 7 August 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


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    PDF MIL-PRF-19500/661D MIL-PRF-19500/661C 2N7444, 2N7434, 2N7391, 2N7392, MIL-PRF-19500.

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


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    PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


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    PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


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    PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


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    PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


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    PDF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


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    PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L

    2n7425

    Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
    Text: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998


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    PDF MIL-PRF-19500 M0036 MO036 2N7394 2N6782 2N7334 2N7336 2N7335 2N6788 2n7425 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262

    smd 662

    Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
    Text: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254


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    PDF MO036 O-254 2N6782, IRFF110 2N6782U, IRFE110 smd 662 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


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    PDF IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1224B international I@R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET


    OCR Scan
    PDF 1224B IRHM7360SE 400Volt, 4A5S452

    AM 22A

    Abstract: bn diode
    Text: Provisional Data Sheet No. PD - 9.1224B International IO R Rectifier IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET


    OCR Scan
    PDF 1224B IRHM7360SE 400Volt, AM 22A bn diode

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    B60C 800 Si

    Abstract: 0/B60C 800 Si
    Text: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3


    OCR Scan
    PDF IRHN7254SE IRHN7450SE IRHNA73b IRHNA7460SE IRHN7C50SE IRHNA7264SE IRH72545E IRHM7264SE IRH7450SE IRH7C50SE B60C 800 Si 0/B60C 800 Si

    irh7254se

    Abstract: SMD H21
    Text: International Government and Space HEXFET Power MOSFETs Iro^Rectifier Single Event Effect Hardened N-Channel 2 (3) Part Number BVD s s (V) R DS(on) (Ohms) lD @ T , = 25°C Case Iq@ TC = 100°C RthJC Max. Pd @ TC = 25°C Outline (A) (K/W) (W) Number (1) C (A)


    OCR Scan
    PDF IRH7250SE IRH7254SE IRH7450SE T0-204AA IRHM7250SE IRHM7254SE IRHM7360SE IRHM7450SE IRHM7460SE O-254AA SMD H21