IDSS Search Results

IDSS Price and Stock

Filter by Manufacturer


Samtec Inc IDSS-09-D-05.00-G INSULATION DISPLACEMENT SOCKET C Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSS-09-D-05.00-G	Bulk	486		1	1 $5.23 10 $5.23 100 $4.18 1000 $3.33385 10000 $3.33385	Buy Now
Samtec Inc IDSS-08-D-02.00-G CABLE ASSY 8 POS SKT-SKT 2.00" Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSS-08-D-02.00-G	Bulk	460		1	1 $4.19 10 $4.19 100 $3.35 1000 $2.64002 10000 $2.6	Buy Now
Samtec Inc IDSS-11-D-48.00 INSULATION DISPLACEMENT SOCKET C Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSS-11-D-48.00	Bulk	163		1	1 $20.23 10 $19.15 100 $15.11 1000 $14.04748 10000 $14.04748	Buy Now
Samtec Inc IDSS-30-D-32.00-G INSULATION DISPLACEMENT SOCKET C Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSS-30-D-32.00-G	Bulk	85		1	1 $20.26 10 $19.18 100 $15.1301 1000 $13.9875 10000 $13.9875	Buy Now
Samtec Inc IDSS-04-S-80.00-P02 INSULATION DISPLACEMENT SOCKET C Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSS-04-S-80.00-P02	Bulk	51		1	1 $17.04 10 $16.13 100 $12.74 1000 $11.7875 10000 $11.7875	Buy Now

Find more IDSS price and stock on Findchips.com

IDSS Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
IDSS-02-S-03.50-ST4	Samtec	Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C	Original	PDF
IDSS-03-D-18.00	Samtec	Rectangular Cable Assemblies, Cable Assemblies, CABLE RIBBON SOCKET SGNL 3 PIN	Original	PDF
IDSS-04-D-06.00	Samtec	Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C	Original	PDF
IDSS-05-S-05.75-T-ST4	Samtec	Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM 5POS	Original	PDF
IDSS-08-D-05.00-G	Samtec	Cable Assemblies - Rectangular Cable Assemblies - CABLE ASSEM .100 8POS 5 GRAY	Original	PDF
IDS-S-08-D-05.00-G	Samtec	Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM .100 8POS 5 GRAY	Original	PDF
IDSS-08-D-06.00	Samtec	Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C	Original	PDF
IDSS-09-D-05.00-G	Samtec	Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C	Original	PDF
IDSS-14-D-22.00-R	Samtec	Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM 14POS	Original	PDF
IDSS-16-D-05.00-G	Samtec	Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM .1" 16POS F-F 5"	Original	PDF
IDSS-16-D-06.00	Samtec	Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C	Original	PDF
IDSS-16-D-09.00	Samtec	Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM .1" 16POS F-F 9"	Original	PDF
IDSS-16-D-12.00-G	Samtec	Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C	Original	PDF
IDSS-16-D-24.00-G	Samtec	Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C	Original	PDF

IDSS-17-D-18.00	Samtec	Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEMBLY SOCKET 17 POSITIO	Original	PDF

IDSS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)	Original	PDF	TK8A25DA O-220SIS
TK72A Abstract: No abstract text available Text: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)	Original	PDF	TK72A12N1 O-220SIS TK72A
k4a60db Abstract: K4A60 K4A60D Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	PDF	TK4A60DB k4a60db K4A60 K4A60D
tk12a65d Abstract: tk12a65 Text: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)	Original	PDF	TK12A65D O-220SIS tk12a65d tk12a65
Untitled Abstract: No abstract text available Text: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)	Original	PDF	TJ150F04M3L O-220SM
Untitled Abstract: No abstract text available Text: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)	Original	PDF	TK65E10N1 O-220
TJ9A10M3 Abstract: No abstract text available Text: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)	Original	PDF	TJ9A10M3 O-220SIS TJ9A10M3
TK70J04K3Z Abstract: No abstract text available Text: TK70J04K3Z MOSFETs Silicon N-channel MOS U-MOS TK70J04K3Z 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)	Original	PDF	TK70J04K3Z TK70J04K3Z
K3407 Abstract: No abstract text available Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	PDF	2SK3407 K3407
2SK36 Abstract: No abstract text available Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High \|Yfs\|: \|Yfs\| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)	Original	PDF	2SK369 2SK36
2SK170 to92 Abstract: 2SJ74 Text: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High \|Yfs\|: \|Yfs\| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)	Original	PDF	2SJ74 2SK170 SC-43 2SK170 to92 2SJ74
PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA Abstract: PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4404N NTMS4404NR2 Text: NTMS4404N Power MOSFET 30 V, 12 A, Single N−Channel, SO−8 Features • High Density Power MOSFET with Ultra Low RDS on for Higher • • • Efficiency Miniature SO−8 Surface Mount Package Saving Board Space IDSS Specified at Elevated Temperature Diode Exhibits High Speed, Soft Recovery	Original	PDF	NTMS4404N NTMS4404N/D PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4404N NTMS4404NR2
samtec lc Abstract: 1-800-SAMTEC-9 esq 120 13 Text: F-203 Through T/H Hole TSW .025" SQ TERMINAL STRIPS SERIES SMT See TSM Mates with: SSW, SSQ, ESW, ESQ, BCS, BSW, IDSD, IDSS, CES, SLW TYPE STRIP SPECIFICATIONS TSW Insulator Material: Black Glass Filled Polyester Terminal Material: Phosphor Bronze Operating Temp	Original	PDF	F-203 1-800-SAMTEC-9 samtec lc esq 120 13
EFA240B-100F Abstract: No abstract text available Text: Excelics EFA240B-100F DATA SHEET Low Distortion GaAs Power FET ' 7<3 7<3 All Dimensions In mils ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression	Original	PDF	EFA240B-100F EFA240B-100F

Untitled Abstract: No abstract text available Text: TK40J60U MOSFETs Silicon N-Channel MOS DTMOS TK40J60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)	Original	PDF	TK40J60U
Untitled Abstract: No abstract text available Text: TPCA8085 MOSFETs Silicon N-channel MOS U-MOS TPCA8085 1. Applications • Motor Drivers • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)	Original	PDF	TPCA8085
Untitled Abstract: No abstract text available Text: TK90S06N1L MOSFETs Silicon N-channel MOS U-MOS-H TK90S06N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)	Original	PDF	TK90S06N1L
Untitled Abstract: No abstract text available Text: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)	Original	PDF	TK35E08N1 O-220
TK15A Abstract: TK15A20D Text: TK15A20D MOSFETs Silicon N-Channel MOS π-MOS TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)	Original	PDF	TK15A20D O-220SIS TK15A TK15A20D
Untitled Abstract: No abstract text available Text: TK5A45DA MOSFETs Silicon N-Channel MOS π-MOS TK5A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 1.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)	Original	PDF	TK5A45DA O-220SIS
2sj111 fet Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110 Text: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < \|Yfs\| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)	OCR Scan	PDF	2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110
DN2620 Abstract: No abstract text available Text: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology	OCR Scan	PDF	DN2620 DN2624 600mA 600mA DN2620N3 DN2624N3 DN2620ND DN2624ND 300mA, 300jxs
UC754 Abstract: UC758 Text: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max	OCR Scan	PDF	KK4302 KK4303 KK4304 UC100 UC105 UC110 UC120 UC130 UC135 UC701 UC754 UC758
Untitled Abstract: No abstract text available Text: TSW—209-09—S-S—RJ arrifec TSW-108—05—S-Q TSW-116-11—G-S I'i i. Mates vith: SSW. 5 SQ. ESW. ESQ. BCS. E 5W. IDSD. IDSS. CES, S _W TYPE STRIP NO. PINS PER ROW PIN CENTERS 11 Precision Drawn Terminal Strips H " I ^ f k i i i _ S ta n d a rd I O V V “ S trip	OCR Scan	PDF	TSW-116-11-- TSW-108-- m1-1502

Privacy Settings

IDSS Search Results

IDSS Price and Stock

Samtec Inc IDSS-09-D-05.00-G

Samtec Inc IDSS-08-D-02.00-G

Samtec Inc IDSS-11-D-48.00

Samtec Inc IDSS-30-D-32.00-G

Samtec Inc IDSS-04-S-80.00-P02

IDSS Datasheets (15)

IDSS Datasheets Context Search

Untitled

TK72A

k4a60db

tk12a65d

Untitled

Untitled

TJ9A10M3

TK70J04K3Z

K3407

2SK36

2SK170 to92

PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA

samtec lc

EFA240B-100F

Untitled

Untitled

Untitled

Untitled

TK15A

Untitled

2sj111 fet

DN2620

UC754

Untitled