IDSS Search Results

2sj111 fet

Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
Contextual Info: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)

Contextual Info: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

TK72A

Contextual Info: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

k4a60db

Abstract: K4A60 K4A60D
Contextual Info: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)

tk12a65d

Abstract: tk12a65
Contextual Info: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)

Contextual Info: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

Contextual Info: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

TJ9A10M3

Contextual Info: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)

TK70J04K3Z

Contextual Info: TK70J04K3Z MOSFETs Silicon N-channel MOS U-MOS TK70J04K3Z 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

K3407

Contextual Info: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

2SK36

Contextual Info: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)

2SK170 to92

Abstract: 2SJ74
Contextual Info: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA

Abstract: PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4404N NTMS4404NR2
Contextual Info: NTMS4404N Power MOSFET 30 V, 12 A, Single N−Channel, SO−8 Features • High Density Power MOSFET with Ultra Low RDS on for Higher • • • Efficiency Miniature SO−8 Surface Mount Package Saving Board Space IDSS Specified at Elevated Temperature Diode Exhibits High Speed, Soft Recovery

samtec lc

Abstract: 1-800-SAMTEC-9 esq 120 13
Contextual Info: F-203 Through T/H Hole TSW .025" SQ TERMINAL STRIPS SERIES SMT See TSM Mates with: SSW, SSQ, ESW, ESQ, BCS, BSW, IDSD, IDSS, CES, SLW TYPE STRIP SPECIFICATIONS TSW Insulator Material: Black Glass Filled Polyester Terminal Material: Phosphor Bronze Operating Temp

DN2620

Contextual Info: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology

NEZ3642-15D

Abstract: NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D NEZ3642-8DL
Contextual Info: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS

UC754

Abstract: UC758
Contextual Info: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max

Contextual Info: TK40J60U MOSFETs Silicon N-Channel MOS DTMOS TK40J60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)

Contextual Info: TPCA8085 MOSFETs Silicon N-channel MOS U-MOS TPCA8085 1. Applications • Motor Drivers • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

Contextual Info: TSW—209-09—S-S—RJ arrifec TSW-108—05—S-Q TSW-116-11—G-S I'i i. Mates vith: SSW. 5 SQ. ESW. ESQ. BCS. E 5W. IDSD. IDSS. CES, S _W TYPE STRIP NO. PINS PER ROW PIN CENTERS 11 Precision Drawn Terminal Strips H " I ^ f k i i i _ S ta n d a rd I O V V “ S trip

Contextual Info: TK90S06N1L MOSFETs Silicon N-channel MOS U-MOS-H TK90S06N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)

TK15A

Abstract: TK15A20D
Contextual Info: TK15A20D MOSFETs Silicon N-Channel MOS π-MOS TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Contextual Info: TK5A45DA MOSFETs Silicon N-Channel MOS π-MOS TK5A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)