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    K4A60 Price and Stock

    Toshiba America Electronic Components TK4A60D(STA4,Q,M)

    MOSFET N-CH 600V 4A TO220SIS
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    Mouser Electronics TK4A60D(STA4,Q,M) 97
    • 1 $1.03
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    Toshiba America Electronic Components TK4A60DA(STA4,Q,M)

    MOSFET N-CH 600V 3.5A TO220SIS
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    TME TK4A60DA(STA4,Q,M) 570 1
    • 1 $0.874
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    Toshiba America Electronic Components TK4A60DB(STA4,Q,M)

    MOSFET N-CH 600V 3.7A TO220SIS
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    Toshiba America Electronic Components TK4A60DAR,S4X(S

    TK4A60DAR - Power MOSFET (N-ch 500V<VDSS<700V)
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    Rochester Electronics TK4A60DAR,S4X(S 49,300 1
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    Toshiba America Electronic Components TK4A60DAQM

    SILICON N CHANNEL MOS TYPE (PI-MOSVII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK4A60DAQM 1,722
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    K4A60 Datasheets Context Search

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    k4a60db

    Abstract: K4A60 K4A60D
    Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		PDF TK4A60DB k4a60db K4A60 K4A60D

    k4a60d

    Abstract: K4A60 TK4A60D
    Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original     		PDF TK4A60D k4a60d K4A60 TK4A60D

    K4A60

    Abstract: No abstract text available
    Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original     		PDF TK4A60D K4A60

    K4A60DA

    Abstract: TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da
    Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


    Original     		PDF TK4A60DA K4A60DA TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da

    K4A60D

    Abstract: K4A60
    Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original     		PDF TK4A60D K4A60D K4A60

    K4A60DB

    Abstract: K4A60 TK4A60DB K4A60D
    Text: K4A60DB 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A60DB ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.6 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)


    Original     		PDF TK4A60DB K4A60DB K4A60 TK4A60DB K4A60D

    Untitled

    Abstract: No abstract text available
    Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


    Original     		PDF TK4A60DA

    K4A60

    Abstract: K4A60DA TK4A60DA K4A60D
    Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


    Original     		PDF TK4A60DA K4A60 K4A60DA TK4A60DA K4A60D

    K4A60D

    Abstract: TK4A60D K4A60
    Text: K4A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.5 S (標準)


    Original     		PDF TK4A60D SC-67 2-10U1B 20070701-JA K4A60D TK4A60D K4A60

    K4A60D

    Abstract: No abstract text available
    Text: K4A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.5 S (標準)


    Original     		PDF TK4A60D K4A60D

    Untitled

    Abstract: No abstract text available
    Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original     		PDF TK4A60D

    Untitled

    Abstract: No abstract text available
    Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


    Original     		PDF TK4A60DA

    K4A60DA

    Abstract: TK4A60DA K4A60D K4A60 toshiba tk4a60da
    Text: K4A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A60DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)


    Original     		PDF TK4A60DA SC-67 2-10U1B 20070701-JA K4A60DA TK4A60DA K4A60D K4A60 toshiba tk4a60da

    K4A60DA

    Abstract: No abstract text available
    Text: K4A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A60DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)


    Original     		PDF TK4A60DA K4A60DA

    k4a60db

    Abstract: No abstract text available
    Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		PDF TK4A60DB k4a60db

    k4a60db

    Abstract: No abstract text available
    Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		PDF TK4A60DB k4a60db