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    TK35E08N1 Search Results

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    TK35E08N1 Price and Stock

    Toshiba America Electronic Components TK35E08N1,S1X

    MOSFET N-CH 80V 55A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK35E08N1,S1X Tube 56 1
    • 1 $1.64
    • 10 $1.64
    • 100 $1.64
    • 1000 $0.50014
    • 10000 $0.415
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    Mouser Electronics TK35E08N1,S1X 367
    • 1 $1.44
    • 10 $1.27
    • 100 $0.709
    • 1000 $0.44
    • 10000 $0.415
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    Toshiba America Electronic Components TK35E08N1S1X

    Trans MOSFET N 80V 55A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK35E08N1,S1X)
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    Avnet Americas TK35E08N1S1X Tube 16 Weeks 50
    • 1 -
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    • 100 $0.49468
    • 1000 $0.4482
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    Toshiba America Electronic Components TK35E08N1,S1X(S

    Mosfet, N-Ch, 80V, 55A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:55A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:- Rohs Compliant: Yes |Toshiba TK35E08N1,S1X(S
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    Newark TK35E08N1,S1X(S Bulk 1,889 1
    • 1 $1.05
    • 10 $0.914
    • 100 $0.72
    • 1000 $0.571
    • 10000 $0.465
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    TME TK35E08N1,S1X(S 87 1
    • 1 $0.947
    • 10 $0.676
    • 100 $0.614
    • 1000 $0.562
    • 10000 $0.562
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    EBV Elektronik TK35E08N1,S1X(S 19 Weeks 50
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    Toshiba America Electronic Components TK35E08N1SXS

    MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TK35E08N1SXS 200
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    TK35E08N1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK35E08N1 Toshiba TK35E08 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK35E08N1 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK35E08N1 Toshiba Transistors - Mosfets Original PDF
    TK35E08N1,S1X Toshiba TK35E08N1 - UMOSVIII_80V_12.2MOHM MAX(VGS=10V)_TO-220 Original PDF

    TK35E08N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK35E08N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK35E08N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK35E08N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 10.0 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 80 V)


    Original     		PDF TK35E08N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK35E08N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK35E08N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK35E08N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK35E08N1 O-220

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		PDF SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W