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    2SK36 Search Results

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    2SK36 Price and Stock

    Rochester Electronics LLC 2SK3666-3-TB-E

    JFET N-CH 10MA SMCP
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    DigiKey 2SK3666-3-TB-E Bulk 757,266 4,127
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    Rochester Electronics LLC 2SK3666-2-TB-E

    JFET N-CH
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    DigiKey 2SK3666-2-TB-E Bulk 463,059 4,558
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    Rochester Electronics LLC 2SK3615-TL-E

    N-CHANNEL SILICON MOSFET
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    DigiKey 2SK3615-TL-E Bulk 152,600 410
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    Rochester Electronics LLC 2SK3617-TL-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3617-TL-E Bulk 71,400 807
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    Rochester Electronics LLC 2SK3617-S-TL-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3617-S-TL-E Bulk 60,200 544
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    Find more 2SK36 price and stock on Findchips.com

    2SK36 Datasheets (264)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK36 Unknown FET Data Book Scan PDF
    2SK360 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK360 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK360 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK360 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK360 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK360 Unknown FET Data Book Scan PDF
    2SK3600-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3600-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3600-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3601-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3601-01 Fuji Electric SMD, Power Amplifier, 100V 20A 50W, MOS-FET N-Channel enhanced Original PDF
    2SK3602-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3603-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3604-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3604-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3604-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3605-01 Fuji Electric SMD, Power Amplifier, 150V 16A 50W, MOS-FET N-Channel enhanced Original PDF
    2SK3605-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3606-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    ...

    2SK36 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK36

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		2SK369 2SK36 PDF

    2SK3637

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1


    Original     		2SK3637 O-263 2SK3637 PDF

    ciss

    Abstract: 2SK3635
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode


    Original     		2SK3635 O-252 ciss 2SK3635 PDF

    2SK3636

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		2SK3636 O-263 2SK3636 PDF

    930 18a diode smd

    Abstract: 930 18a 2SK3641 930 diode smd
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A


    Original     		2SK3641 O-252 930 18a diode smd 930 18a 2SK3641 930 diode smd PDF

    2SK3658

    Abstract: No abstract text available
    Text: 2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		2SK3658 2SK3658 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。


    Original     		2SK3633 PDF

    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667 PDF

    K3662

    Abstract: 2SK3662
    Text: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		2SK3662 K3662 2SK3662 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3643 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 2400pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 32 A


    Original     		2SK3643 O-252 2400pF PDF

    K3669

    Abstract: 2SK3669
    Text: 2SK3669 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSVII 2SK3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。 : |Yfs| = 6 S (標準)


    Original     		2SK3669 K3669 2SK3669 PDF

    K3670

    Abstract: TRANSISTOR K3670 2SK3670
    Text: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.)


    Original     		2SK3670 K3670 TRANSISTOR K3670 2SK3670 PDF

    diode FR 105

    Abstract: 2SK3613-01
    Text: 2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof


    Original     		2SK3613-01 voltage50 diode FR 105 2SK3613-01 PDF

    2SK3654

    Abstract: 2SK365
    Text: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		2SK365 2SK3654 2SK365 PDF

    2sk3672

    Abstract: 2SK3673 toshiba audio power amplifier 2SK367
    Text: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		2SK367 2sk3672 2SK3673 toshiba audio power amplifier 2SK367 PDF

    2SK364

    Abstract: TOSHIBA 2SK364 2SJ104 Toshiba 2SJ
    Text: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		2SK364 2SJ104 SC-43 2SK364 TOSHIBA 2SK364 2SJ104 Toshiba 2SJ PDF

    125MH

    Abstract: No abstract text available
    Text: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3685-01 125MH PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply


    Original     		2SK3676-01L PDF

    2SK3638

    Abstract: 2SK3638-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE


    Original     		2SK3638 2SK3638 2SK3638-ZK O-252 O-252) 2SK3638-ZK PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		2SK3651-01R PDF

    2sk3699

    Abstract: 2sk3699-01mr
    Text: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		2SK3699-01MR O-220F 2sk3699 2sk3699-01mr PDF

    2sk3679

    Abstract: mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent
    Text: 2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		2SK3679-01MR O-220F mJ300 2sk3679 mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3690-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		2SK3690-01 O-220AB PDF

    Sj 88 diode

    Abstract: 2SK3612 Diode SJ 14
    Text: 2SK3612-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		2SK3612-01L O-220AB Sj 88 diode 2SK3612 Diode SJ 14 PDF