IC OZ 9936
Abstract: to262 pcb footprint IRG4BH20K-L AN-994
Text: PD -93961 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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IRG4BH20K-L
O-262
den252-7105
IC OZ 9936
to262 pcb footprint
IRG4BH20K-L
AN-994
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -93961 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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IRG4BH20K-L
O-262
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irg4bc40
Abstract: IRG4BC40W
Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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1654A
IRG4BC40W
an52-7105
irg4bc40
IRG4BC40W
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IRG4BC40W
Abstract: irg4bc40 354 GE
Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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1654A
IRG4BC40W
IRG4BC40W
irg4bc40
354 GE
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Untitled
Abstract: No abstract text available
Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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1654A
IRG4BC40W
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IRG4BC10S
Abstract: No abstract text available
Text: PD - 91786A IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in
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1786A
IRG4BC10S
O-220AB
O-220AB
VG252-7105
IRG4BC10S
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IRG4BC20U
Abstract: IRG4BC20
Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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91448D
IRG4BC20U
O-220AB
O-220AB
IRG4BC20U
IRG4BC20
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IRG4BC10K
Abstract: No abstract text available
Text: PD - 91733A IRG4BC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency
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1733A
IRG4BC10K
O-220AB
O-220AB
Uni252-7105
IRG4BC10K
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IRG4BC10K
Abstract: No abstract text available
Text: PD - 91733A IRG4BC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency
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1733A
IRG4BC10K
O-220AB
O-220AB
IRG4BC10K
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irg4bc30s
Abstract: No abstract text available
Text: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1593A
IRG4BC30S
O-220AB
O-220AB
irg4bc30s
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IRG4BC30S
Abstract: No abstract text available
Text: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1593A
IRG4BC30S
O-220AB
O-220AB
VG252-7105
IRG4BC30S
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Untitled
Abstract: No abstract text available
Text: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1593A
IRG4BC30S
O-220AB
O-220AB
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IRG4BC40K
Abstract: No abstract text available
Text: PD - 91592B IRG4BC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency
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91592B
IRG4BC40K
O-247AC
O-220AB
IRG4BC40K
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IC OZ 9936
Abstract: IRG4BC40K
Text: PD - 91592B IRG4BC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency
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91592B
IRG4BC40K
O-247AC
O-220AB
Collector-to-252-7105
IC OZ 9936
IRG4BC40K
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IRG4BC20K
Abstract: IRGBC20K IRGBC20M
Text: PD - 91600A IRG4BC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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1600A
IRG4BC20K
IRG4BC20K
IRGBC20K
IRGBC20M
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Untitled
Abstract: No abstract text available
Text: PD - 91592B IRG4BC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency
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91592B
IRG4BC40K
O-247AC
O-220AB
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IRG4BC20S
Abstract: IRG4BC20
Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1597A
IRG4BC20S
O-220AB
O-220AB
IRG4BC20S
IRG4BC20
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IRG4PC30S
Abstract: No abstract text available
Text: PD - 91586A IRG4PC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1586A
IRG4PC30S
O-247AC
O-247AC
IRG4PC30S
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IRG4PH50S
Abstract: No abstract text available
Text: PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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-91712A
IRG4PH50S
O-247AC
O-247AC
IL252-7105
IRG4PH50S
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Untitled
Abstract: No abstract text available
Text: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1602A
IRG4BC20F
O-220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 91586A IRG4PC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1586A
IRG4PC30S
O-247AC
O-247AC
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Untitled
Abstract: No abstract text available
Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1597A
IRG4BC20S
O-220AB
O-220AB
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IRG4PC50S
Abstract: No abstract text available
Text: PD - 91581A IRG4PC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1581A
IRG4PC50S
O-247AC
O-247AC
ILM252-7105
IRG4PC50S
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IRG4BC20U
Abstract: No abstract text available
Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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91448D
IRG4BC20U
O-220AB
O-220AB
IRG4BC20U
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