IRG4BC20S Search Results
IRG4BC20S Price and Stock
Infineon Technologies AG IRG4BC20SIGBT 600V 19A TO-220AB |
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IRG4BC20S | Tube | 300 |
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Infineon Technologies AG IRG4BC20SDIGBT 600V 19A TO-220AB |
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IRG4BC20SD | Tube | 200 |
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Infineon Technologies AG IRG4BC20SD-SIGBT 600V 19A 60W D2PAK |
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IRG4BC20SD-S | Tube | 50 |
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Infineon Technologies AG IRG4BC20SPBFIGBT 600V 19A TO-220AB |
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IRG4BC20SPBF | Tube |
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IRG4BC20SPBF | Bulk | 600 |
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IRG4BC20SPBF | 143 Weeks | 50 |
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Infineon Technologies AG IRG4BC20SDPBFIGBT 600V 19A TO-220AB |
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IRG4BC20SDPBF | Tube |
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IRG4BC20SDPBF | 13 | 1 |
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IRG4BC20SDPBF | 19 Weeks | 1,000 |
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IRG4BC20S Datasheets (14)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| IRG4BC20S | International Rectifier | Standard Speed IGBT | Original | |||
| IRG4BC20S | International Rectifier | Insulated Gate Bipolar Transistor | Original | |||
| IRG4BC20S | International Rectifier | 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; A IRG4BC20S with Standard Packaging | Original | |||
| IRG4BC20SD | International Rectifier | 600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package; A IRG4BC20SD with Standard Packaging | Original | |||
| IRG4BC20SD | International Rectifier | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | Original | |||
| IRG4BC20SDPBF | International Rectifier | 600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package; Similar to IRG4BC20SD with Lead Free Packaging | Original | |||
| IRG4BC20SDPbF | International Rectifier | TRANS IGBT CHIP N-CH 600V 19A 3TO-220AB | Original | |||
| IRG4BC20SDS | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, | Original | |||
| IRG4BC20SD-S | International Rectifier | 600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package; A IRG4BC20SD-S with Standard Packaging | Original | |||
| IRG4BC20SD-S | International Rectifier | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | Original | |||
| IRG4BC20SD-SPBF | International Rectifier | 600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package; Similar to IRG4BC20SD-S with Lead Free Packaging | Original | |||
| IRG4BC20SD-SPBF | International Rectifier | Original | ||||
| IRG4BC20SPBF | International Rectifier | Original | ||||
| IRG4BC20SPBF | International Rectifier | 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; Similar to IRG4BC20S with Lead Free Packaging | Original |
IRG4BC20S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRG4BC20S
Abstract: 0V39
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Original |
1597A IRG4BC20S O-220AB O-220AB VG252-7105 IRG4BC20S 0V39 | |
AN-994
Abstract: IRG4BC20SD-S
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Original |
IRG4BC20SD-S AN-994 IRG4BC20SD-S | |
AN-994
Abstract: IRG4BC20SD-S irg4bc
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Original |
IRG4BC20SD-S AN-994 IRG4BC20SD-S irg4bc | |
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Contextual Info: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 |
Original |
IRG4BC20SD O-220AB | |
f1010Contextual Info: PD - 94939 IRG4BC20SDPbF • Lead-Free www.irf.com 1 1/13/04 IRG4BC20SDPbF 2 www.irf.com IRG4BC20SDPbF www.irf.com 3 IRG4BC20SDPbF 4 www.irf.com IRG4BC20SDPbF www.irf.com 5 IRG4BC20SDPbF 6 www.irf.com IRG4BC20SDPbF www.irf.com 7 IRG4BC20SDPbF 8 www.irf.com |
Original |
IRG4BC20SDPbF f1010 | |
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Contextual Info: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 |
Original |
-95691A IRG4BC20SD-SPbF EIA-418. | |
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Contextual Info: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
IRG4BC20SPbF O-220AB O-220AB O-220AB. | |
IRG4BC20SDContextual Info: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 |
Original |
IRG4BC20SD O-220AB IRG4BC20SD | |
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Contextual Info: P D - 9. 1597 International IOR Rectifier IRG4BC20S P R E L IM IN A R Y Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter |
OCR Scan |
IRG4BC20S O-220AB | |
IRG4BC20SDContextual Info: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 |
Original |
IRG4BC20SD O-220AB IRG4BC20SD | |
MOSFET 40A 600V
Abstract: inverter circuit 200v to 100v mosfet 600V 10A ic
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Original |
4939A IRG4BC20SDPbF O-220AB MOSFET 40A 600V inverter circuit 200v to 100v mosfet 600V 10A ic | |
TO-220AB transistor packageContextual Info: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
IRG4BC20SPbF O-220AB O-220AB O-220AB. TO-220AB transistor package | |
D2Pak Package dimensionsContextual Info: PD - 95691 IRG4BC20SD-SPbF • Lead-Free www.irf.com 8/31/04 IRG4BC20SD-SPbF 2 www.irf.com IRG4BC20SD-SPbF www.irf.com 3 IRG4BC20SD-SPbF 4 www.irf.com IRG4BC20SD-SPbF www.irf.com 5 IRG4BC20SD-SPbF 6 www.irf.com IRG4BC20SD-SPbF www.irf.com 7 IRG4BC20SD-SPbF |
Original |
IRG4BC20SD-SPbF D2Pak Package dimensions | |
IRG4BC20S
Abstract: IRG4BC20
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Original |
1597A IRG4BC20S O-220AB O-220AB IRG4BC20S IRG4BC20 | |
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Contextual Info: PD - 94939 IRG4BC20SDPbF • Lead-Free www.irf.com 1 1/13/04 IRG4BC20SDPbF 2 www.irf.com IRG4BC20SDPbF www.irf.com 3 IRG4BC20SDPbF 4 www.irf.com IRG4BC20SDPbF www.irf.com 5 IRG4BC20SDPbF 6 www.irf.com IRG4BC20SDPbF www.irf.com 7 IRG4BC20SDPbF 8 www.irf.com |
Original |
IRG4BC20SDPbF | |
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Contextual Info: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 |
Original |
IRG4BC20SD-S | |
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Contextual Info: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1597A IRG4BC20S O-220AB O-220AB | |
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Contextual Info: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 |
Original |
4939A IRG4BC20SDPbF O-220AB | |
IRG4BC20S
Abstract: RIA 39 transistor
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Original |
IRG4BC20S O-220AB O-220AB IRG4BC20S RIA 39 transistor | |
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Contextual Info: International I R Rectifier PD - 9 .1 5 9 7 IRG4BC20S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter |
OCR Scan |
IRG4BC20S O-22QAB | |
AN-994Contextual Info: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 |
Original |
-95691A IRG4BC20SD-SPbF diodes57) EIA-418. AN-994 | |
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Contextual Info: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
5639A IRG4BC20SPbF O-220AB O-220AB | |
K02A
Abstract: 0int
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Original |
IRG4BC20SD-SPbF K02A 0int | |
IRG4PC30S
Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
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Original |
O-220 Pak/TO-262 O-220 O-247 Super247 IRGP20B120UD-E IRG4BC40K IRG4PC30K IRG4PC40K IRG4PC50K IRG4PC30S igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S | |