IRG4BC20U Search Results
IRG4BC20U Price and Stock
Infineon Technologies AG IRG4BC20UIGBT 600V 13A TO-220AB |
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IRG4BC20U | Tube | 450 |
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Infineon Technologies AG IRG4BC20UDIGBT 600V 13A TO-220AB |
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IRG4BC20UD | Tube | 50 |
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Infineon Technologies AG IRG4BC20U-SIGBT 600V 16A TO-220AB |
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IRG4BC20U-S | Tube | 450 |
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Infineon Technologies AG IRG4BC20UD-SIGBT 600V 13A 60W D2PAK |
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IRG4BC20UD-S | Tube | 300 |
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Infineon Technologies AG IRG4BC20UPBFIGBT 600V 13A TO-220AB |
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IRG4BC20UPBF | Tube |
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IRG4BC20UPBF | Bulk | 5 |
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IRG4BC20UPBF | 143 Weeks | 50 |
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IRG4BC20U Datasheets (24)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRG4BC20U | International Rectifier | 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package; A IRG4BC20U with Standard Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20U | International Rectifier | UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20U | International Rectifier | Fast Speed IGBT | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD | International Rectifier | 600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; A IRG4BC20UD with Standard Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD | International Rectifier | IGBT INSULATED GATE BIPOLAR TRANSISTOR | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD | International Rectifier | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD | International Rectifier | UltraFast CoPack IGBT | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 13A, TO-220 CoPack | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UDPBF | International Rectifier | 600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC20UD with Lead Free Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UDPbF | International Rectifier | TRANS IGBT CHIP N-CH 600V 13A 3TO-220AB | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UDS | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD-S | International Rectifier | 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package; A IRG4BC20UD-S with Standard Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD-S | International Rectifier | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD-SPBF | International Rectifier | 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package; Similar to IRG4BC20UD-S with Lead Free Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRG4BC20UD-SPBF | International Rectifier | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD-STRL | International Rectifier | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD-STRL | International Rectifier | TRANS IGBT CHIP N-CH 600V 13A 3D2-PAK T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UDSTRLP | International Rectifier | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD-STRR | International Rectifier | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UD-STRR | International Rectifier | TRANS IGBT CHIP N-CH 600V 13A 3D2-PAK T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4BC20U Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IRG4BC20U
Abstract: IRG4BC20
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Original |
91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20 | |
transistor IR 840
Abstract: OZ930
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OCR Scan |
IRG4BC20UD T0220AB transistor IR 840 OZ930 | |
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Contextual Info: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter |
OCR Scan |
1448C IRG4BC20U TQ-220AB 002flb45 | |
irf 100v 200A
Abstract: transistor irf 840 IRF 840 equivalent
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Original |
IRG4BC20UDPbF O-220AB O-220AB. irf 100v 200A transistor irf 840 IRF 840 equivalent | |
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Contextual Info: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
PD-91449C IRG4BC20UD 200kHz O-220AB | |
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Contextual Info: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD |
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HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 | |
IRF 042
Abstract: IRG4BC20UDPBF
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Original |
4909A IRG4BC20UDPbF O-220AB IRF 042 IRG4BC20UDPBF | |
transistor iqr
Abstract: g-50Q IRG4BC20U
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OCR Scan |
IRG4BC20U TQ-220AB transistor iqr g-50Q IRG4BC20U | |
diode bridge LT 405
Abstract: IRG4BC20UD
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Original |
IRG4BC20UD O-220AB diode bridge LT 405 IRG4BC20UD | |
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Contextual Info: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
IRG4BC20UD-SPbF 200kHz | |
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Contextual Info: PD - 9.1448B International I R Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter |
OCR Scan |
1448B IRG4BC20U TQ-220AB | |
IRG4BC20UPbFContextual Info: PD - 95445A IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
5445A IRG4BC20UPbF O-220AB O-220AB IRG4BC20UPbF | |
IRG4BC20UContextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter |
Original |
IRG4BC20U O-220AB O-220Ai IRG4BC20U | |
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Contextual Info: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter |
Original |
4909A IRG4BC20UDPbF O-220AB | |
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Contextual Info: PD - 95445A IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
5445A IRG4BC20UPbF O-220AB O-220AB | |
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Contextual Info: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode |
OCR Scan |
IRG4BC20UD T0-220AB S5452 | |
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Contextual Info: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter |
OCR Scan |
IRG4BC20U O-22QAB 100eters | |
IRG4BC20UD equivalent
Abstract: IRG4BC20UD PD-91449C
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Original |
PD-91449C IRG4BC20UD 200kHz O-220AB IRG4BC20UD equivalent IRG4BC20UD PD-91449C | |
IRF 504
Abstract: 005 418 irf 144
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Original |
IRG4BC20UD-SPbF 200kHz IRF 504 005 418 irf 144 | |
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Contextual Info: PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
5565A IRG4BC20UD-SPbF 200kHz | |
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Contextual Info: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
IRG4BC20UD-S 200kHz | |
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Contextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91448D IRG4BC20U O-220AB O-220AB | |
IRG4BC20UD-S
Abstract: 50s MARKING CODE
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Original |
IRG4BC20UD-S 200kHz IRG4BC20UD-S 50s MARKING CODE | |
555 triangular wave
Abstract: transistor 45 f 122 Inductive Load Driver igbt transistor
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Original |
IRG4BC20UPbF O-220AB O-220AB O-220AB. 555 triangular wave transistor 45 f 122 Inductive Load Driver igbt transistor | |