IRG4BC20F Search Results
IRG4BC20F Price and Stock
Infineon Technologies AG IRG4BC20FIGBT 600V 16A TO-220AB |
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IRG4BC20F | Tube |
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Infineon Technologies AG IRG4BC20FDIGBT 600V 16A TO-220AB |
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IRG4BC20FD | Tube | 300 |
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Infineon Technologies AG IRG4BC20F-SIGBT 600V 16A TO-220AB |
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IRG4BC20F-S | Tube | 50 |
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Infineon Technologies AG IRG4BC20FD-SIGBT 600V 16A 60W D2PAK |
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IRG4BC20FD-S | Tube | 150 |
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Infineon Technologies AG IRG4BC20FPBFIGBT 600V 16A TO-220AB |
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IRG4BC20FPBF | Tube |
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IRG4BC20FPBF | Bulk | 5 |
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IRG4BC20FPBF | 143 Weeks | 500 |
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IRG4BC20F Datasheets (25)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRG4BC20F | International Rectifier | Fast Speed IGBT | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20F | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20F | International Rectifier | 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC20F with Standard Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD | International Rectifier | Fast CoPack IGBT | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD | International Rectifier | 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; A IRG4BC20FD with Standard Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FDPbF | International Rectifier | TRANS IGBT CHIP N-CH 600V 16A 3TO-220AB | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FDPBF | International Rectifier | 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC20FD with Lead Free Packaging | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-S | International Rectifier | 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-S | International Rectifier | Fast CoPack IGBT | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-SPBF | International Rectifier | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 60W D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-SPbF | International Rectifier | TRANS IGBT CHIP N-CH 600V 16A 3D2-PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-STRL | International Rectifier | 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-STRL | International Rectifier | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRG4BC20FDSTRLP | International Rectifier | TRANS IGBT CHIP N-CH 600V 16A 3D2PAK T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-STRLPBF | International Rectifier | TRANS IGBT CHIP N-CH 600V 16A 3D2-PAK T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-STRR | International Rectifier | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 60W D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-STRR | International Rectifier | 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FD-STRR | International Rectifier | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20FDSTRRP | International Rectifier | TRANS IGBT CHIP N-CH 600V 16A 3D2PAK T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4BC20F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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AN-994
Abstract: IRG4BC20FD-S
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-91783A IRG4BC20FD-S optimize20 AN-994 IRG4BC20FD-S | |
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Contextual Info: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . |
OCR Scan |
IRG4BC20FD O-22QAB | |
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Contextual Info: PD - 94906 IRG4BC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter |
Original |
IRG4BC20FDPbF O-220AB | |
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Contextual Info: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
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IRG4BC20FPbF O-220AB O-220AB O-220AB. | |
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Contextual Info: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
IRG4BC20FPbF O-220AB O-220AB | |
f1010Contextual Info: PD - 94906 IRG4BC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter |
Original |
IRG4BC20FDPbF O-220AB f1010 | |
ECJFContextual Info: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
OCR Scan |
IRG4BC20F O-220AB ECJF | |
IR igbt gate driver ic
Abstract: TRANSISTOR 1602 IRG4BC20F
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Original |
IRG4BC20F O-220AB O-220AB IR igbt gate driver ic TRANSISTOR 1602 IRG4BC20F | |
IRG4BC20FD
Abstract: IRG4BC20F
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Original |
IRG4BC20FD O-220AB IRG4BC20FD IRG4BC20F | |
IRG4BC20FContextual Info: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1602A IRG4BC20F O-220AB O-220AB IRG4BC20F | |
IRG4BC20FDContextual Info: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
1601A IRG4BC20FD O-220AB optimiz52-7105 IRG4BC20FD | |
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Contextual Info: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
-91783A IRG4BC20FD-S | |
IGBT W 20 NK 50 Z
Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD
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Original |
IRG4BC20FD O-220AB IGBT W 20 NK 50 Z IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD | |
IRG4BC20FDContextual Info: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
1601A IRG4BC20FD O-220AB optimiz20 IRG4BC20FD | |
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Contextual Info: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
IRG4BC20FPbF O-220AB O-220AB | |
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Contextual Info: PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
IRG4BC20FD-SPbF | |
AN-994
Abstract: IRG4BC20FD-S
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Original |
-91783A IRG4BC20FD-S optimize52-7105 AN-994 IRG4BC20FD-S | |
IRG4BC20FD-SPbF
Abstract: AN-994 IRF530S
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Original |
IRG4BC20FD-SPbF IRG4BC20FD-SPbF AN-994 IRF530S | |
IRG4BC20FContextual Info: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1602A IRG4BC20F O-220AB O-220AB IRG4BC20F | |
15QQ
Abstract: T0320 iCR 406 J
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OCR Scan |
IRG4BC20FD 00nof3tion T0-220AB 15QQ T0320 iCR 406 J | |
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Contextual Info: International IOR Rectifier P D - 9. 1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1- 5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
OCR Scan |
IRG4BC20F O-22QAB 6266C | |
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Contextual Info: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
1601A IRG4BC20FD O-220AB | |
f1010Contextual Info: PD - 94906 IRG4BC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter |
Original |
IRG4BC20FDPbF O-220AB O-220AB. f1010 | |
AN-994
Abstract: IRF530S 2740 D
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Original |
IRG4BC20FD-SPbF EIA-418. AN-994 IRF530S 2740 D | |