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Pulse Electronics Corporation HX6400NL MODULE QUAD 1GPP 1:1 SMT TU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HX6400NL	Tray	342		1	1 $25.58 10 $21.945 100 $20.23217 1000 $18.98683 10000 $18.98683	Buy Now
Avnet Americas	HX6400NL	Tube	938	10 Weeks	60	1 - 10 - 100 $20.5758 1000 $19.2717 10000 $19.2717	Buy Now
Mouser Electronics	HX6400NL					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	HX6400NL		116		2	1 - 10 $31.382 100 $27.183 1000 $25.571 10000 $25.571	Buy Now
Newark	HX6400NL	Bulk			120	1 - 10 - 100 $19.57 1000 $18.99 10000 $18.99	Buy Now

Onlinecomponents.com	HX6400NL		120			1 $35.32 10 $24.14 100 $20.91 1000 $19.08 10000 $19.08	Buy Now
TTI	HX6400NL	Tube			120	1 - 10 - 100 - 1000 $22.65 10000 $22.65	Buy Now
Avnet Abacus	HX6400NL			21 Weeks	120	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	HX6400NL		120			1 $35.32 10 $24.14 100 $20.91 1000 $19.08 10000 $19.08	Buy Now
Sager	HX6400NL				120	1 - 10 - 100 - 1000 $19.07 10000 $19.07	Buy Now
Pulse Electronics Corporation HX6400NLT MDL QUAD 1GPP 1:1 SM TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HX6400NLT	Cut Tape	70		1	1 $25.58 10 $21.945 100 $20.3746 1000 $20.3746 10000 $20.3746	Buy Now
	HX6400NLT	Digi-Reel	70		1	1 $25.58 10 $21.945 100 $20.3746 1000 $20.3746 10000 $20.3746	Buy Now
	HX6400NLT	Reel			170	1 - 10 - 100 - 1000 $19.53018 10000 $19.53018	Buy Now
Avnet Americas	HX6400NLT	Reel		10 Weeks	170	1 - 10 - 100 - 1000 $20.1411 10000 $19.2717	Buy Now
Mouser Electronics	HX6400NLT					1 $25.58 10 $21.95 100 $20.21 1000 $18.52 10000 $18.52	Get Quote
Newark	HX6400NLT	Reel			170	1 $19.28 10 $19.28 100 $19.28 1000 $17.25 10000 $17.25	Buy Now
Onlinecomponents.com	HX6400NLT					1 - 10 - 100 $23.18 1000 $17.92 10000 $17.92	Buy Now

TTI	HX6400NLT	Reel			170	1 - 10 - 100 - 1000 $18.11 10000 $18.11	Buy Now
Avnet Abacus	HX6400NLT	Reel	340	21 Weeks	170	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Sager	HX6400NLT					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Lattice Semiconductor Corporation ICE40HX640-VQ100 IC FPGA 67 I/O 100TQFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ICE40HX640-VQ100	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Pulse Electronics Corporation HX6409NL - Trays (Alt: HX6409NL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HX6409NL	Tray		8 Weeks	120	1 - 10 - 100 - 1000 - 10000 -	Get Quote

HX640 Datasheets (51)

Part	Manufacturer	Description	Datasheet Type	PDF
HX6400NL	Pulse Electronics	MODULE QUAD 1GPP 1:1 SMT TU	Original	PDF
HX6408	Honeywell	512K x 8 STATIC RAM-SOI	Original	PDF
HX6408	Honeywell	512k x 8 STATIC RAM	Original	PDF
HX6408-BFM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KBFM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KBHM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KBNM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KBRN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KEHM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KENM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KERN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KQFM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KQHN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KQNN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF

HX6408KSFN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KSRM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KVFM	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KVHN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KVNN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF
HX6408KVRN	Honeywell	512K x 8 STATIC RAM- SOI	Original	PDF

HX640 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum	Original	HX6408	PDF
x-ray cmos Abstract: HX6409 6409D 6218 FIFO 065um capacitor enw Text: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit	Original	HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit x-ray cmos 6409D 6218 FIFO 065um capacitor enw	PDF
065um Abstract: No abstract text available Text: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit	Original	HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit 065um	PDF
HX6409 Abstract: D1878 Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)	Original	HX6409 HX6218 HX6136 1x106 1x1014 1x109 1x1011 HX6409 D1878	PDF
Untitled Abstract: No abstract text available Text: FIFO - HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low In addition, the three FIFOs have an output enable pin power, first-in first-out memories with clocked read and write OE and a master reset pin (MR). The read (CKR)	Original	HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit	PDF
HX6409 Abstract: No abstract text available Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)	Original	HX6409 HX6218 HX6136 1x106 1x1014 1x109 1x1011 HX6409	PDF
900198 Abstract: HX6408 Text: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C	Original	HX6408 3x105 1X106 1x1014 1x1010 1x1012 1x10-10 900198 HX6408	PDF
Untitled Abstract: No abstract text available Text: HX6409/HX6218/HX6136 First-In First-Out Memory The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out FIFO memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136	Original	HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit HX6136	PDF
Untitled Abstract: No abstract text available Text: HX6408 512K x 8 STATIC RAM The monolithic 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems	Original	HX6408 710mW 40MHz ADS-14132	PDF
NSL 32 equivalent Abstract: HX6408 Text: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum	Original	HX6408 NSL 32 equivalent HX6408	PDF
NSL 32 equivalent Abstract: HX6408 Text: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C	Original	HX6408 3x105 1X106 1x1014 1x1010 1x1012 1x10-10 NSL 32 equivalent HX6408	PDF
honeywell memory sram Abstract: hx6408 HXS6408 Text: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating	Original	HXS6408 150nm HXS6408 22CFR honeywell memory sram hx6408	PDF
HX6408 Abstract: No abstract text available Text: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low	Original	HRT6408 150nm ADS-14194 HX6408	PDF
Untitled Abstract: No abstract text available Text: iCE40 HX-Series Ultra Low-Power mobileFPGA™ Family R SiliconBlue December 15, 2011 1.1 Preliminary Data Sheet Figure 1: iCE40 HX-Series Family Architectural Features  HX-Series - Tablet targeted series optimized for high performance Low cost package offerings	Original	iCE40â iCE40 iCE65 iCEman40HX iCE40HX 15-DEC-2011)	PDF

Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65\|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)	OCR Scan	HX6409 HX6218 HX6136 1x106 1x101 1x109	PDF
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65\|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)	OCR Scan	HX6409 HX6218 HX6136 1x106rad 1x101 1x109	PDF
Untitled Abstract: No abstract text available Text: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 \|a,m Process (Leff = 0.65\|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)	OCR Scan	HX6409 HX6218 HX6136 1x106rad 1x101 1x109	PDF
HX6408 Abstract: No abstract text available Text: Honeywel Advance Information Aerospace Electronics HX6408 512K x 8 STATIC RAM— SOI FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 2 5 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 \|a,m Process (Leff = 0.28 \|a,m)	OCR Scan	1x101 36-Lead HX6408 HX6408	PDF
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 \|a,m Process (Leff = 0.65\|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)	OCR Scan	HX6409 HX6218 HX6136 1x106rad 1x101 1x109	PDF
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times	OCR Scan	HX6409 HX6218 HX6136 1x10U 1x109	PDF
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65\|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)	OCR Scan	1x10srad 1x1014 1x109 1x1011 1x1010 HX6409 HX6218 HX6136	PDF
900198 Abstract: HX6408 si02 1a15 Text: Honeywel Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 \|a,m Process (Leff = 0.4 \|a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(S i02)	OCR Scan	5x105rad 1x109 1x101 40-Lead HX6408 900198 HX6408 si02 1a15	PDF
NSL 32 equivalent Abstract: AVW smd AVW smd transistor Text: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 \|im)	OCR Scan	36-Lead HX6408 5x105rad 1x101 NSL 32 equivalent AVW smd AVW smd transistor	PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan		PDF

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HX640 Datasheets (51)

HX640 Datasheets Context Search

Untitled

x-ray cmos

065um

HX6409

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HX6409

900198

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NSL 32 equivalent

NSL 32 equivalent

honeywell memory sram

HX6408

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HX6408

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900198

NSL 32 equivalent

RCA SK CROSS-REFERENCE