2SA733
Abstract: 2SA733 Q equivalent PA33 transistor 2sa733 ALL 2sa733
Text: DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA733 is designed for use in diver stage of AF amplifier. φ 5.2 MAX. FEATURES 5.5 MAX. • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA)
|
Original
|
2SA733
2SA733
2SA733 Q equivalent
PA33
transistor 2sa733
ALL 2sa733
|
PDF
|
transistor 2sa733
Abstract: 2SA733 PA33 TC-3004B D1086
Text: DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA733 is designed for use in diver stage of AF amplifier. φ 5.2 MAX. FEATURES 5.5 MAX. • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA)
|
Original
|
2SA733
2SA733
transistor 2sa733
PA33
TC-3004B
D1086
|
PDF
|
d1117
Abstract: D111 2SA1988 MP-88
Text: DATA SHEET Silicon Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO = –200 V • DC Current Gain hFE = 70 to 200
|
Original
|
2SA1988
2SA1988
MP-88
d1117
D111
MP-88
|
PDF
|
2SA1743
Abstract: C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
|
Original
|
2SA1743
2SA1743
C11531E
|
PDF
|
2SA1742
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal
|
Original
|
2SA1742
2SA1742
O-220
O-220)
|
PDF
|
D1316
Abstract: 2SA1744
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is
|
Original
|
2SA1744
2SA1744
D1316
|
PDF
|
2SA1741
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
|
Original
|
2SA1741
2SA1741
|
PDF
|
2SA1766
Abstract: ITR04527 marking al
Text: 2SA1766 Ordering number : EN3182C SANYO Semiconductors DATA SHEET 2SA1766 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 .
|
Original
|
2SA1766
EN3182C
2SA1766
ITR04527
marking al
|
PDF
|
D1802
Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
|
Original
|
2SB624A
2SD596A
D1802
TRANSISTOR BV3
2SB624A
nec marking power amplifier
|
PDF
|
2SD596A
Abstract: transistor DV3 D1788 2SB624
Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
|
Original
|
2SD596A
2SB624
2SD596A
transistor DV3
D1788
|
PDF
|
NEC C11531E
Abstract: 2SA812 2SC1623 C11531E C1984
Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1
|
Original
|
2SA812
2SC1623
C11531E)
NEC C11531E
2SA812
2SC1623
C11531E
C1984
|
PDF
|
TC1627
Abstract: 1627A 2SB963-Z 2SD1286-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION PACKAGE DRAWING (Unit: mm) The 2SB963-Z is designed for switching, especially in Hybrid 5.5 ±0.2 • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z
|
Original
|
2SB963-Z
2SB963-Z
2SD1286-Z
TC1627
1627A
2SD1286-Z
|
PDF
|
2SA1845
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
2SA1845
2SA1845
|
PDF
|
2SA1847
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
2SA1847
2SA1847
|
PDF
|
|
|
MJ4502 EQUIVALENT
Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A
|
Original
|
MJ4502
MJ802
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
MJ4502 EQUIVALENT
BU108
BU806 Complement
BDX54
BU326
BU100
|
PDF
|
2SA812A
Abstract: 2SC1623A
Text: DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
|
Original
|
2SA812A
2SC1623A
2SA812A
2SC1623A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
|
Original
|
2SB1261-Z
2SB1261-Z
|
PDF
|
D1826
Abstract: 2SB1261 2SB1261-Z 2sb126
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
|
Original
|
2SB1261-Z
2SB1261-Z
D1826
2SB1261
2sb126
|
PDF
|
IC 3526
Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc
|
Original
|
BD802
BD802
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
IC 3526
transistor MJ15024
tip3055 equivalent
RCA1C13
BU108
2N6277 applications
MJ3247
BDX54
motorola MJ3000
2N3791 equivalent
|
PDF
|
2SA1376
Abstract: transistor 2sc3478 transistor 2sa1376 2sc3478a
Text: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:
|
Original
|
2SA1376,
2SA1376/2SA1376A)
2SC3478
2SC3478A
2SA1376/2SA1376A
2SA1376
transistor 2sc3478
transistor 2sa1376
2sc3478a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:
|
Original
|
2SA1376,
2SA1376/2SA1376A)
2SC3478
2SC3478A
2SA1376/2SA1376A
|
PDF
|
pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
|
Original
|
BD136
BD138
BD140
BD140-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
pin configuration transistor bd140
2SD669 equivalent
BUV44
bd140 equivalent transistor
MJE15020
bd140 equivalent
BD250C EQUIVALENT
RCA122
2N6045 NPN POWER DARLINGTON
TRANSISTOR BD 136
|
PDF
|
TC1627
Abstract: 2SD1286Z 2sb963 TC-1627A 2SB963-Z 2SD1286-Z MEI-1202 2210j 1627A
Text: DATA SHEET SILICON TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2SB963-Z is designed for switching, especially in Hybrid in m illim eters Integrated Circuits. FEATURES • High Gain hFE = 2 000 to 3 000
|
OCR Scan
|
2SB963-Z
2SB963-Z
2SD1286-Z
IEI-1209)
TC1627
2SD1286Z
2sb963
TC-1627A
2SD1286-Z
MEI-1202
2210j
1627A
|
PDF
|
TC-6209
Abstract: 2SA1611 2SC4177 MEI-1202 2115A NEC IC free
Text: DATA SHEET IMEC SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES • C om plem entary to 2SC4177 • High DC Current Gain: hFE = 200 TYP. V ce = -6 .0 V, Ic = -1 .0 mA • High Voltage: V ceo = -5 0 V
|
OCR Scan
|
2SA1611
2SC4177
IEI-1209)
TC-6209
2SA1611
2SC4177
MEI-1202
2115A
NEC IC free
|
PDF
|
