2SC4177 Search Results

2SC4177 Result Highlights (4)

Part	Manufacturer	Description
2SC4177(0)-T1-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SC4177-T2-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors, SSP, /
2SC4177(0)-T1-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SC4177-T1-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors, SSP, /

2SC4177 Price and Stock

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NEC Electronics Group 2SC4177-T1-A(L6A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC4177-T1-A(L6A)		257,575			1 $0.29 10 $0.29 100 $0.29 1000 $0.29 10000 $0.29	Buy Now
NEC Electronics Group 2SC4177-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC4177-T1		15,200			1 $0.84 10 $0.84 100 $0.84 1000 $0.84 10000 $0.147	Buy Now
Renesas Electronics Corporation 2SC4177T1 Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SC4177T1		24,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SC4177 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC4177	Kexin	NPN Silicon Epitaxia	Original	PDF
2SC4177	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SC4177	NEC	Semiconductor Selection Guide	Original	PDF
2SC4177	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC4177	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC4177	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC4177	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC4177	NEC	NPN Transistor	Scan	PDF
2SC4177	NEC	Silicon Transistor	Scan	PDF
2SC4177L4	NEC	Audio Frequency General Purpose Amplifier NPN Silicon Epitaxial Transistor	Scan	PDF
2SC4177L5	NEC	Audio Frequency General Purpose Amplifier NPN Silicon Epitaxial Transistor	Scan	PDF
2SC4177L6	NEC	Audio Frequency General Purpose Amplifier NPN Silicon Epitaxial Transistor	Scan	PDF
2SC4177L7	NEC	Audio Frequency General Purpose Amplifier NPN Silicon Epitaxial Transistor	Scan	PDF
2SC4177-T1	NEC	Silicon Transistor	Scan	PDF

2SC4177-T2	NEC	Silicon Transistor	Scan	PDF
2SC4177W	Galaxy Semi-Conductor Holdings	Silicon Epitaxial Planar Transistor	Original	PDF

2SC4177 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC4177 Abstract: No abstract text available Text: 2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES    High DC Current Gain. High Voltage. Complementary to 2SA1611 A L 3 3 C B	Original	PDF	2SC4177 OT-323 2SA1611 2SC4177-L4 2SC4177-L5 2SC4177-L6 2SC4177-L7 100mA, 25-Oct-2013 2SC4177
2SC4177 Abstract: No abstract text available Text: 2SC4177 SOT-323 2SC4177 1. BASE 2. EMITTER TRANSISTOR NPN FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range	Original	PDF	2SC4177 OT-323 100mA, -10mA 2SC4177
L6 smd Abstract: smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177 Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V	Original	PDF	2SC4177 100mA, -10mA L6 smd smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE	Original	PDF	OT-323 2SC4177 2SA1611 100mA,
2SA1611 Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking Text: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L	Original	PDF	2SA1611 OT-323 2SC4177 2SA1611-M4 2SA1611-M6 2SA1611-M7 2SA1611-M5 -100mA, -10mA 2SA1611 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	OT-323 2SA1611 2SC4177 -100mA, -10mA
2SC4177 Abstract: 2SC5343 Text: 2SC4177 ＳＯＴ－３２３ 2SC4177 TRANSISTOR NPN 1.BASE 2.EMITTER FEATURES １．２５±０．０５ Parameter Symbol ０．３０２．００±０．０５２．３０±０．０５１．３０±０．０３ Power dissipation PCM : 0.15	Original	PDF	2SC4177 525REF 026TYP 650TYP 021REF 2SC4177 2SC5343
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE	Original	PDF	OT-323 2SC4177 2SA1611
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4177 1. BASE 2. EMITTER TRANSISTOR NPN FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03	Original	PDF	OT-323 OT-323 2SC4177 100mA, -10mA
surface mounted m6 transistor Abstract: sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES 2SA1611W Pb z High voltage VCEO=-50V. z Excellent HFE Linearity. z High DC current gain : hFE=200 typ. z Complementary to 2SC4177. Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.	Original	PDF	2SA1611W 2SC4177. OT-323 BL/SSSTF033 surface mounted m6 transistor sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp
L6 TRANSISTOR Abstract: l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4177W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1611. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier.	Original	PDF	2SC4177W 2SA1611. OT-323 BL/SSSTF039 L6 TRANSISTOR l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
MBR1620CT Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106 Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)	Original	PDF	5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 MBR1620CT 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
secos gmbh Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers	Original	PDF	SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	PDF	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
2sk2500 Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	PDF	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Untitled Abstract: No abstract text available Text: SILICON TRANSISTO R 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES P A C K A G E D IM E N S IO N S • Complementary to 2SA1611 in m illim eters • High DC Current Gain: hpe = 200 TYP. V ce = 6-0 V, tc - 1.0 mA	OCR Scan	PDF	2SC4177 2SA1611
SA1611 Abstract: No abstract text available Text: SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeter* • Complementary to 2SC4177 2 . 1 ± 0.1 • High D C Current Gain: hpE = 200 TYP. {VC e = - 6 . 0 V, lc « - 1 . 0 m A	OCR Scan	PDF	2SA1611 2SC4177 SA1611
TC-6209 Abstract: 2SA1611 2SC4177 MEI-1202 2115A NEC IC free Text: DATA SHEET IMEC SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES • C om plem entary to 2SC4177 • High DC Current Gain: hFE = 200 TYP. V ce = -6 .0 V, Ic = -1 .0 mA • High Voltage: V ceo = -5 0 V	OCR Scan	PDF	2SA1611 2SC4177 IEI-1209) TC-6209 2SA1611 2SC4177 MEI-1202 2115A NEC IC free
S0426 Abstract: 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215 Text: Silicon Transistor 2SC4177 f t ftw i t 7 "' -y K I C J B t L T o j g / J ' ^ ^ - r i ) ») , o2SA1611 t 3 >7° 'J / >9 m m f l t t . t. : mm) 2 . 1 + 0.1 U T-lfIfi-C'ë â i “o 1.25 ± 0 . 1 ohFE^SS^o hpE * 200 TY P . Vce = 6.0 V, Ic — 1.0 mA) o SiBEt>* ¡Ht'0	OCR Scan	PDF	2SC4177 o2SA1611 S0426 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS • C om plem entary to 2 S A 1 6 1 1 in m illim eters • High DC C u rrent G ain: h FE = 2 0 0 TYP.	OCR Scan	PDF	2SC4177 2SA1611
4288A Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083 Text: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI	OCR Scan	PDF	2SC4404 2SC4186 2SC4903 2SC3934 2SC4264 2SC4083 2SC4400 4288A 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC3931 2SC3210 2SC4083

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2SC4177 Search Results

2SC4177 Result Highlights (4)

2SC4177 Price and Stock

NEC Electronics Group 2SC4177-T1-A(L6A)

NEC Electronics Group 2SC4177-T1

Renesas Electronics Corporation 2SC4177T1

2SC4177 Datasheets (16)

2SC4177 Datasheets Context Search

2SC4177

2SC4177

L6 smd

Untitled

2SA1611

Untitled

2SC4177

Untitled

Untitled

surface mounted m6 transistor

L6 TRANSISTOR

sn76131

MBR1620CT

secos gmbh

micro servo 9g

alternator diode 1776 B

2sk2500

Transistor S8550 2TY

Untitled

SA1611

TC-6209

S0426

Untitled

4288A