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    2SA812 Search Results

    2SA812 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA812A-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SA812(0)-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SA812-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SA812-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SA812(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
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    2SA812 Price and Stock

    Micro Commercial Components 2SA812-M7-TP

    Interface
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    DigiKey 2SA812-M7-TP Bulk 3,000
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    Mouser Electronics 2SA812-M7-TP
    • 1 $0.21
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    Micro Commercial Components 2SA812-M4-AP

    TRANS PNP 50V 0.1A SOT23
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    DigiKey 2SA812-M4-AP Ammo Pack
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    Micro Commercial Components 2SA812-M5-AP

    TRANS PNP 50V 0.1A SOT23
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    Micro Commercial Components 2SA812-M6-TP

    Interface
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    DigiKey 2SA812-M6-TP Bulk 3,000
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    Mouser Electronics 2SA812-M6-TP 6,677
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    Rochester Electronics LLC 2SA812A-T1B-AT

    SMALL SIGNAL BIPOLAR TRANS PNP
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    DigiKey 2SA812A-T1B-AT Bulk 3,245
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    2SA812 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA812 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SA812 Kexin PNP Silicon Epitaxial Transistor Original PDF
    2SA812 NEC Semiconductor Selection Guide 1995 Original PDF
    2SA812 NEC Semiconductor Selection Guide Original PDF
    2SA812 NEC Audio Frequencygeneral Purpose Amplifier Pnp Silicon Epitaxial Transistor Mini Mold Original PDF
    2SA812 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA812 TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-23 Original PDF
    2SA812 Various Russian Datasheets Transistor Original PDF
    2SA812 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA812 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA812 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA812 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA812 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA812 Unknown PNP transistor Scan PDF
    2SA812 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA812 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA812 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA812 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA812 NEC PNP Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SA812-L NEC Silicon Transistor Scan PDF

    2SA812 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor m6

    Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1


    Original     		PDF 2SA812 OT-23 temperat100 smd transistor m6 transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812

    2SA812K

    Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
    Text: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA


    Original     		PDF 2SA812K 2SC1623K OT-23 -100uA 100mA, -10mA 01-June-2002 2SA812K sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135

    NEC C11531E

    Abstract: 2SA812 2SC1623 C11531E C1984
    Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1


    Original     		PDF 2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA


    Original     		PDF 2SA812 hFE600. OT-23 60Vdc -100mAdc, -10mAdc)

    2SA812

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 2SA812

    m6 marking transistor sot-23

    Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
    Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623

    Diode marking m7

    Abstract: marking of m7 diodes marking M4
    Text: MCC TM Micro Commercial Components 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x High DC Current Gain:90Љ hFEЉ600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V x Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SA812 OT-23 Diode marking m7 marking of m7 diodes marking M4

    2SA812

    Abstract: 2sa812 transistor
    Text: 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 0. 95¡ À0. 025 PCM : 1. 02 Power dissipation 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range


    Original     		PDF 2SA812 OT-23-3L -10mA 2SA812 2sa812 transistor

    2SA812A

    Abstract: 2SC1623A
    Text: DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C)


    Original     		PDF 2SA812A 2SC1623A 2SA812A 2SC1623A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SA812 OT-23

    2SA812-M7

    Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 hFE600. 2SA812-M7 2SA812M5 2SA812 2SA812M6

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA


    Original     		PDF 2SA812 hFE600. OT-23 60Vdc -10mAdc)

    2SA812

    Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
    Text: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF 2SA812 2SC1623 OT-23 -100mA -10mA 062in Width300uS 2SA812 m6 marking transistor sot-23 2SA812M6 2SA812-M6

    2SA812

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage V V(BR)CBO : -60


    Original     		PDF OT-23-3L 2SA812 OT-23-3L -10mA 2SA812

    m6 marking transistor sot-23

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23

    2SA812M6

    Abstract: 2SA812 2SC1623
    Text: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage


    Original     		PDF 2SA812 2SC1623 -100mA -10mA 062in 300uS 2SA812 2SA812M6 2SC1623

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V


    Original     		PDF 2SA812 hFE600. OT-23 60Vdc -100mAdc, -10mAdc)

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA


    Original     		PDF 2SA812 hFE600. OT-23

    2SA81

    Abstract: 2sA812R
    Text: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i


    OCR Scan     		PDF 2SA812 2SA812R 2SC1623 2SA81 2sA812R

    2SA812

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.


    OCR Scan     		PDF 2SA812 2SC1623 IEI-1209) 2SA812

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS i r m illim e te rs • Com plem entary to 2SC1623 • High DC C u rrent Gain: hpg = 200 TY P . V c e 5 - 6 .0 V , lc = —1.0 m A


    OCR Scan     		PDF 2SA812 2SC1623

    2SA1301 TOSHIBA

    Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
    Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207


    OCR Scan     		PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646

    2SC3735

    Abstract: 1SS153
    Text: Q U ICK REFERENCE GUIDE 3 TABLE OF SAME CH ARACTERISTICS IN DEFERENT PACKAGES 3 PIN SU P E R M IN I M O L D (FIG. 6) 3 PIN M IN I M O L D (FIG 4} FM /A M M IX ./ O SC / IF 2SC4179 2SC1009A AF A M P 2SA1611 2SA812 2SA1612 2SA811A A P P LIC A T IO N Driver, Output


    OCR Scan     		PDF 2SC4179 2SA1611 2SA1612 2SC4177 2SC4180 2SC4181 2SK853ADriver, 2SC1009A 2SA812 2SA811A 2SC3735 1SS153