HAT3018RJ Search Results

HAT3018RJ Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HAT3018RJ		Renesas Technology	MOSFET, Switching; VDSS (V): 60/-60; ID (A): 6/-5; Pch : -; RDS (ON) typ. (ohm) @10V: 0.028/0.06; RDS (ON) typ. (ohm) @4V[4.5V]: 0.04/0.09; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000/1350; toff ( us) typ: 0.028/0.06; Package: SOP-8		Original	PDF
HAT3018RJ		Renesas Technology	Silicon N/P Channel Power MOS FET		Original	PDF

HAT3018RJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HAT3018R Abstract: HAT3018RJ Contextual Info: HAT3018R, HAT3018RJ Silicon N/P Channel Power MOS FET High Speed Power Switching REJ03G0127-0100Z Rev.1.00 Oct.20.2003 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee	Original	HAT3018R, HAT3018RJ REJ03G0127-0100Z HAT3018R HAT3018R HAT3018RJ	PDF
HAT3018R Abstract: HAT3018RJ Contextual Info: HAT3018R, HAT3018RJ Silicon N/P Channel Power MOS FET High Speed Power Switching REJ03G0127-0200 Rev.2.00 Nov 04, 2008 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee	Original	HAT3018R, HAT3018RJ REJ03G0127-0200 PRSP0008DD-D REJ03G0127-0200 HAT3018R HAT3018RJ	PDF
HAT3018R Abstract: HAT3018RJ Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
H7N1009MD Abstract: fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC Contextual Info: April 2010 Renesas Electronics Power Devices for Automotives Features Surface mounting and multi-tip built-in package Merits High efficiency and low loss, Best support for high-power control Miniaturization, Integration High avalanche destruction tolerance,	Original	injectio009MD H7N1006MD H7N0607DS H7P0601DS 2SK3155 2SK3162 H7N1004DS O220FM HSOP20 H7N1009MD fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC	PDF
H7N1009MD Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility	Original	CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as	PDF