Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HARRIS SEMICONDUCTOR OPERATIONAL EQUIVALENTS Search Results

    HARRIS SEMICONDUCTOR OPERATIONAL EQUIVALENTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    HARRIS SEMICONDUCTOR OPERATIONAL EQUIVALENTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Harris Semiconductor operational equivalents

    Abstract: sec 472 varistor
    Text: NA Series S E M I C O N D U C T O R Industrial High Energy Metal-Oxide Square Disc Varistors January 1998 Features Description • Provided in Disc Form for Unique Packaging by Customer The NA Series of transient surge suppressors are varistors MOVs in square disc form, intended for special industrial


    Original     		PDF AN8820. 1-800-4-HARRIS Harris Semiconductor operational equivalents sec 472 varistor

    sec 472 varistor

    Abstract: No abstract text available
    Text: [ /Title NA Series /Subject (Industrial High Energy MetalOxide Square Disc Varistors) /Autho r () /Keywords (Harris Corporation, Suppression Products, TVS, Transient Suppression, Protection, AC Line, AC NA Series Data Sheet Industrial High Energy Metal-Oxide


    Original     		PDF 1-800-4-HARRIS sec 472 varistor

    Untitled

    Abstract: No abstract text available
    Text: FSYA250D, FSYA250R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs September 1997 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSYA250D, FSYA250R 1-800-4-HARRIS

    FSJ264

    Abstract: MIL-S-19500 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
    Text: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ264D, FSJ264R 1-800-4-HARRIS FSJ264 MIL-S-19500 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1

    FSS913AOD

    Abstract: No abstract text available
    Text: FSS913AOD, FSS913AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs January 1998 Features Description • 10A, -100V, rDS ON = 0.280Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS913AOD, FSS913AOR 1-800-4-HARRIS FSS913AOD

    FSL923AOD

    Abstract: No abstract text available
    Text: FSL923AOD, FSL923AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs September 1997 Features Description • 5A, -200V, rDS ON = 0.670Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL923AOD, FSL923AOR 1-800-4-HARRIS FSL923AOD

    2E12

    Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
    Text: FSJ055D, FSJ055R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A Note 1 , 60V, rDS(ON) = 0.011Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ055D, FSJ055R 1-800-4-HARRIS 2E12 FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3

    FSJ260

    Abstract: MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766
    Text: S E M I C O N D U C T O R FSJ260D, FSJ260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ260D, FSJ260R 1-800-4-HARRIS FSJ260 MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766

    Untitled

    Abstract: No abstract text available
    Text: FSJ055D, FSJ055R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs January 1998 Features Description • 70A, 60V, rDS ON = 0.014Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ055D, FSJ055R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS23A4D, FSS23A4R 1-800-4-HARRIS

    FSS13AOD

    Abstract: No abstract text available
    Text: FSS13AOD, FSS13AOR TO-257AA 3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE A INCHES ØP E A1 MIN MAX MIN MAX NOTES A 0.190 0.200 4.83 5.08 - A1 0.035 0.045 0.89 1.14 - Q H1 D 0.065 R TYP. L1 Øb1 L Øb 0.025 0.035 0.64 0.88 2, 3 Øb1 0.060 0.090 1.53 2.28 -


    Original     		PDF FSS13AOD, FSS13AOR O-257AA O-257AA FSS13A0D1 FSS13A0D3 FSS13A0R1 FSS13A0R3 FSS13A0R4 FSS13AOD

    FSL23AOD

    Abstract: No abstract text available
    Text: FSL23AOD, FSL23AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 6A, 200V, rDS ON = 0.350Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL23AOD, FSL23AOR 1-800-4-HARRIS FSL23AOD

    FSL13AOD

    Abstract: No abstract text available
    Text: FSL13AOD, FSL13AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 9A, 100V, rDS ON = 0.180Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL13AOD, FSL13AOR 1-800-4-HARRIS FSL13AOD

    FSS23AOD1

    Abstract: No abstract text available
    Text: FSS23AOD, FSS23AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 9A, 200V, rDS ON = 0.330Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS23AOD, FSS23AOR 1-800-4-HARRIS FSS23AOD1

    Untitled

    Abstract: No abstract text available
    Text: a HC-5504ALC HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit juiy 1993 Features • Description Functional Replacement for the HC-5504 T h e Harris S LIC incorporates many of the B O R S H T func­ tions on a single IC chip. This includes D C battery feed, a


    OCR Scan     		PDF HC-5504ALC HC-5504 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: Af>ft ô 19» Œ CA3262A, CA3262 Quad-Gated Inverting Power Driver A prii 1993 Features Description • • • • • • • The CA3262 and CA3262A are used to interface low-level logic to high current loads. Each Power Driver has four inverting switches consisting of a non-inverting logic input


    OCR Scan     		PDF CA3262A, CA3262 CA3262 CA3262A 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSYE430D, FSYE430R June 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically designed for


    OCR Scan     		PDF FSYE430D, FSYE430R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSJ260D, FSJ260R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Description • 44A, 200V, ros O N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSJ260D, FSJ260R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 70A, 100V, rDS 0 N = °<>22i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSJ160D, FSJ160R 36MeV/mg/cm2 FSJ160D1 FSJ160D3 FSJ160R1 FSJ160R3 FSJ16 1-800-4-HARRIS

    pj 939 diode

    Abstract: diode PJ 41 MG pj 939 diode SS 12 pj 889 diode
    Text: H A F R R I F S S L 1 3 A D , S E M I C O N D U C T O R F 1 3 A R Description Features 9A, 100V, Tds ON = 0-180i2 • Total Dose - Meets Pre-RAD Specifications to 1 00K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with


    OCR Scan     		PDF 1-800-4-HARRIS pj 939 diode diode PJ 41 MG pj 939 diode SS 12 pj 889 diode

    Untitled

    Abstract: No abstract text available
    Text: FSS13A0D, FSS13A0R Ju ly 1999 D ata S h eet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSS13A0D, FSS13A0R 1-800-4-HARRIS

    max6239

    Abstract: No abstract text available
    Text: FSTJ9055D, FSTJ9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    OCR Scan     		PDF FSTJ9055D, FSTJ9055R 1-800-4-HARRIS max6239

    Untitled

    Abstract: No abstract text available
    Text: FSJ055D, FSJ055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 70A Note 1 , 60V, r D S (0 N ) = 0.011 £2 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSJ055D, FSJ055R 36MeV/mg/cm2 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSJ264D, FSJ264R 1-800-4-HARRIS