FSJ160R3 Search Results

2E12

Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3
Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

FSJ160R3

Abstract: 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: H A R R IS X FSJ160D, FSJ160R S em iconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad hard MOSFETS in Harris
Contextual Info: S E M I C O N D U C T O R FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

FSJ160D

Abstract: FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3 2E12 Rad hard MOSFETS in Harris
Contextual Info: FSJ160D, FSJ160R Semiconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Rad Hard in Fairchild for MOSFET

Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 70A, 100V, rDS 0 N = °<>22i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space