GFC36 Search Results

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi GFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 GFC36V4460A MGFC38VS258 GFC36V6964 M G FC36V6964A GFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36V5258 5 .2 ~ 5 .8 G H z BAND 4W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The GFC36V5258 is an internally impedance-matched GaAs power FET especially designed fo r use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36 V 7 177 to r p . 0 * * “ 0 " p \ a n «>* d ls c o « « " u e 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The GFC36V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7

7785A

Abstract: FC36V
Contextual Info: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36V5964 «rodu ct p\an *°r p ° disco«*1 6.4G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed for use in 5 .9 ~ 6.4

F20i

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> l oX p\an M GFC36V7785 p r o d u c t'0 *1 J discontinue 7 .7 —8.5G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8 .5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> pvoduction GFC36 V 7785 p la n * ° r d ,s c o n t .n u e 7.7 ~ 8.5G H z BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC36V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7.7 ~ 8.5

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V S 258 5 .2 —5 .8G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 5 2 5 8 is an internally impedance-matched GaAs power F E T especially designed for use in 5.2 ~ 5.8 G H z band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 3742 o r p>o<*u c t' ° " Pd '» n lS c o n t v nn u e 3 .7 ' 4.2G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC36V3742 is an internally impedance-matched GaAs power FET especially designed for use In 3.7 ~ 4.2

MGFC36V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 5964 p 'o d u c,i° " P'a" d lS C O B t W 5 .9 ' 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC36V5964 is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 ~ 6.4