MGFC36 Search Results
MGFC36 Price and Stock
Abracon Corporation AMPMGFC-36.8640TMEMS Oscillator, 36.864 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-36.8640T) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMPMGFC-36.8640T | Reel | 111 Weeks | 1,000 |
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AMPMGFC-36.8640T |
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AMPMGFC-36.8640T | 113 Weeks | 1,000 |
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Abracon Corporation AMPMGFC-36.0000TMEMS Oscillator, 36 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-36.0000T) |
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AMPMGFC-36.0000T | Reel | 111 Weeks | 1,000 |
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AMPMGFC-36.0000T |
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AMPMGFC-36.0000T | 113 Weeks | 1,000 |
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Abracon Corporation AMPMGFC-36.8640T3MEMS Oscillator, 36.864 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-36.8640T3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMPMGFC-36.8640T3 | Reel | 111 Weeks | 3,000 |
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AMPMGFC-36.8640T3 |
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AMPMGFC-36.8640T3 | 113 Weeks | 3,000 |
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Abracon Corporation AMPMGFC-3.6864T3MEMS Oscillator, 3.6864 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-3.6864T3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMPMGFC-3.6864T3 | Reel | 111 Weeks | 3,000 |
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AMPMGFC-3.6864T3 | 113 Weeks | 3,000 |
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Abracon Corporation AMPMGFC-3.6864MEMS Oscillator, 3.6864 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Bulk (Alt: AMPMGFC-3.6864) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMPMGFC-3.6864 | Bulk | 111 Weeks | 1,000 |
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AMPMGFC-3.6864 | 113 Weeks | 1,000 |
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MGFC36 Datasheets (35)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| MGFC36C3742A |
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3.7-4.2GHz band 4W internally matched GaAs fet | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V3436 |
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3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V3436 |
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3.4 - 3.6 GHz Band 4 W Internally Matched GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V3436 |
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3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V3742 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V3742 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V3742A |
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3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V3742A |
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3.7-4.2 GHz BAND 4W INTERNALLY MATCHED GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V4450 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V4450 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V4450A |
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4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V4450A |
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FET, ID 3.75 A | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V5258 |
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5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V5258 |
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5.2-5.8 GHz BAND 4W Internally Matched GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| MGFC36V5258 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V5258 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V5867 |
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5.8 ~ 6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V5964 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V5964 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGFC36V5964A |
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5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MGFC36 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MGFC36V6472AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V6472A 6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability. |
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MGFC36V6472A MGFC36V6472A 25dBm 10MHz June/2004 | |
12api
Abstract: 251C MGFC36V5964A
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OCR Scan |
FC36V5964A MGFC36V5964A 45dBc ltem-01 10MHz" 12api 251C | |
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Contextual Info: MITSUBISHI S EM IC O N D U CTO R <G aA s FET> MGFC36V7177 iro d u c t » o n p\an fo r P dicontinue 7 . 1 - 7 . 7 GHz BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7 |
OCR Scan |
MGFC36V7177 | |
IM335Contextual Info: MITSUBISHI SEMICONDUCTOR \GaAs FET/ MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FC 36V7177A is an internally O U T L IN E D R A W IN G impedance-matched GaAs power FET especially designed fo r use in 7.1 ~ 7.7G H z |
OCR Scan |
MGFC36V7177A 36V7177A IM335 | |
MGFC36V4450AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic |
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MGFC36V4450A MGFC36V4450A 25dBm 10MHz | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7177A -Shto 1,0 „ata«'«” S O IT .« ti a r ‘ . v.rni» are 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches) |
OCR Scan |
MGFC36V7177A MGFC36V7177A | |
MGFC36V4450A
Abstract: MGFC36V4450
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MGFC36V4450A MGFC36V4450A 25dBm 10MHz June/2004 MGFC36V4450 | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic |
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MGFC36V5258 MGFC36V5258 | |
MGFC36V3742AContextual Info: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic |
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MGFC36V3742A MGFC36V3742A -45dBc 25dBm | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic |
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MGFC36V7177A MGFC36V7177A -45dBc 25dBm | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic |
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MGFC36V7785A MGFC36V7785A -45dBc 25dBm | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC36V5964A MGFC36V5964A -45dBc 25dBm | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A P R E L » 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The |
OCR Scan |
MGFC36V5964A MGFC36V5964A 96CTYP) 45dBc 10MHz' | |
FET TH 469Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET M G FC36V3742A ai ThrS i>ä art S~b' 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 3.7~4.2GHz |
OCR Scan |
FC36V3742A MGFC36V3742A 45d8c FET TH 469 | |
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MGFC36V3742AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC36V3742A MGFC36V3742A 25dBm 10MHz June/2004 | |
Mitsubishi
Abstract: MGFC36V5258 mitsubishi electric 5.8GHz
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Original |
June/2004 MGFC36V5258 Mitsubishi MGFC36V5258 mitsubishi electric 5.8GHz | |
MGFC36V3742AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC36V3742A MGFC36V3742A 25dBm 10MHz | |
MGFC36V3436Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic |
Original |
MGFC36V3436 MGFC36V3436 25dBm Oct-03 | |
MGFC36V7785A
Abstract: fet 30 f 124
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OCR Scan |
FC36V7785A MGFC36V7785A 45dBc ltem-01 ltem-51 fet 30 f 124 | |
mgfc30
Abstract: MGFC39V5964A
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OCR Scan |
MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 mgfc30 MGFC39V5964A | |
MGFC36V6471Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> «« prod^0" MGFC36V6471 6 .4 ~ 7 .2 G H z BAND 4 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 6 4 7 1 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 .4 ~ 7 .2 G H z band amplifiers. The herm etically sealed metal-ceramic |
OCR Scan |
MGFC36V6471 MGFC36V6471 | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC36V4450A MGFC36V4450A -45dBc 25dBm | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC36V5964A MGFC36V5964A -45dBc 25dBm | |
ID11Contextual Info: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC36V4450A MGFC36V4450A -45dBc 25dBm ID11 | |