Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GAAS SCHOTTKY Search Results

    GAAS SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    GAAS SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k 1413 FET

    Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1801B MGF1801B, 23dBm June/2004 k 1413 FET mitsubishi microwave MGF1801B MGF1801 MGF1 PDF

    MGF1601B

    Abstract: mitsubishi microwave MGF1601
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1601B MGF1601B, MGF1601B mitsubishi microwave MGF1601 PDF

    k 1413 FET

    Abstract: MGF1601B MGF1601
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1601B MGF1601B, k 1413 FET MGF1601B MGF1601 PDF

    MGF1801B

    Abstract: Microwave power GaAs
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1801B MGF1801B, 23dBm MGF1801B Microwave power GaAs PDF

    FET K 1358

    Abstract: MGF0916A gp 752 9452 smd
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		MGF0916A MGF0916A 23dBm 100mA 50pcs) FET K 1358 gp 752 9452 smd PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) PDF

    MGF0909A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power


    Original     		MGF0909A MGF0909A June/2004 PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) June/2004 PDF

    5687 general electric

    Abstract: mitsubishi 1183 MGF0912A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power


    Original     		MGF0912A MGF0912A 33dBm June/2004 5687 general electric mitsubishi 1183 PDF

    MGF0909

    Abstract: MGF0909a J10-0025
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGF0909A, GaAs FET with an N-channel schottky gate, is Unit:millimeters designed for use in UHF band amplifiers. FEATURES 1 • High output power P1dB=38dBm TYP.


    Original     		MGF0909A MGF0909A, 38dBm 20dBm MGF0909 MGF0909a J10-0025 PDF

    FET K 1358

    Abstract: 9452 smd MGF0916A fet smd 2657 FET
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		MGF0916A MGF0916A 23dBm 100mA 50pcs) June/2004 FET K 1358 9452 smd fet smd 2657 FET PDF

    M 1661 S

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		MGFC2415A MGFC2400 150mA M 1661 S PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		MGFC2407A MGFC2400 PDF

    Silicon Point Contact Mixer Diodes

    Abstract: Mixer Silicon Detector
    Text: Section 4 Receiving Diodes GaAs Schottky Barrier Mixer D io d e s . 4-2 GaAs Beamless Mixer Diodes .


    OCR Scan     		PDF

    E 212 fet

    Abstract: MGF1801BT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1801BT MGF1801BT 23dBm 100mA E 212 fet PDF

    ha 1406 ha

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package


    OCR Scan     		MGF1801B MGF1801B, ha 1406 ha PDF

    MGF1801

    Abstract: IG200 mitsubishi microwave MGF1801BT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky g a te , is designed for use S-X band amplifiers and oscillators. The.hermetically sealed metal-ceramic package


    OCR Scan     		MGF1801 MGF1801BT MGF1801BT 23dBm 100mA IG200 mitsubishi microwave PDF

    MGF1801BT

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1801BT MGF1801BT 23dBm 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)


    OCR Scan     		MGF0909A MGF0909A, 38dBm 20dBm PDF

    LT 0842

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gale, is designed for use in UHF band amplifiers. FEATURES ♦ Class A operation ♦ High oulpul power PidB=38dBm(TYP) @2.3GHz


    OCR Scan     		MGF0910A MGF0910A, 38dBm LT 0842 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power PidB=41dBm(TYP) @2.3GHz


    OCR Scan     		MGF0911A MGF0911A, 41dBm PDF

    MGF1601

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The


    OCR Scan     		MGF1601B MGF1601B, 100mA Pro54 MGF1601 PDF

    MGF0953P

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET Plastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @ f=2.15GHz,Pin=10dBm


    OCR Scan     		MGF0953P MGF0953P 15GHz 10dBm 15GHz 25deg PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET fPlastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @f=2.15GHz,Pin=10dBm


    OCR Scan     		MGF0953P MGF0953P 15GHz 10dBm 15GHz 25deg PDF